BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Asia/Shanghai BEGIN:STANDARD DTSTART:19910915T010000 TZOFFSETFROM:+0900 TZOFFSETTO:+0800 TZNAME:CST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20250818T045321Z UID:DBED96DB-2107-434A-B235-FEF17496FACF DTSTART;TZID=Asia/Shanghai:20250711T090000 DTEND;TZID=Asia/Shanghai:20250811T122600 DESCRIPTION:In celebration of the 100th anniversary of the invention of the field-effect transistor (FET)\, the FET100 Celebration Activity: Colloqui um on Industry–Academia–Research Collaborative Innovation in GaN Techn ology was successfully held at Room BS4114\, IBSS Building\, SIP South Cam pus of Xi’an Jiaotong-Liverpool University (XJTLU). The event was jointl y organized by the IEEE CASS-EDS Suzhou Joint Chapter\, the IEEE CASS-EDS XJTLU Student Branch Chapter\, and the XJTLU Advanced Semiconductor Resear ch Center. The colloquium was initiated and chaired by Associate Professor Wen Liu\, and jointly coordinated by Ms. Yu Hu and Ms. Jiao Li\, attracti ng enthusiastic participation from faculty\, students\, and industry repre sentatives.\n\nThis colloquium focused on the cutting-edge advancements an d interdisciplinary collaboration in Gallium Nitride (GaN) power electroni cs\, featuring keynote presentations from experts representing Nanjing Uni versity\, Innoscience Technology\, and XJTLU\, as well as research showcas es by student teams working on wide-bandgap semiconductor technologies.\n\ nExpert Keynotes: Deep Dive into GaN Technologies and Applications\n\nThe event opened with a keynote speech by Dr. Dunjun Chen\, Vice Dean of the S chool of Electronic Science and Engineering at Nanjing University. In his talk\, “Gate Dielectric Technology and Reliability Mechanism of GaN-base d Power Devices”\, Dr. Chen elaborated on the intrinsic material propert ies of GaN — including its wide bandgap\, strong polarization\, and sign ificant lattice mismatch — and presented his team's latest research in B aTiO₃-based gate dielectric engineering. With optimized annealing at 400 –500°C\, the team achieved record device performance: a breakdown volta ge of 1910 V\, a figure-of-merit of 1.05 GW/cm²\, and an average electric field strength of 1.4 MV/cm. Furthermore\, the devices demonstrated an ex ceptional on/off current ratio of 4.1×10⁹\, subthreshold swing of 70.6 mV/dec\, and saturation current of 508 mA/mm. Dr. Chen also introduced adv ancements in p-NiO gate structures\, which significantly improved hole con centration and carrier mobility.\n\nThe second talk was delivered by Dr. J iangmin Gu\, Associate Professor at the School of Intelligent Engineering\ , XJTLU. His presentation\, “Sub-Block Design for Monolithic PMIC Based on GaN HEMT Technology”\, focused on system-level design of monolithic G aN power management ICs (PMICs). Highlighting the superior performance of GaN in high-voltage\, high-frequency\, and high-temperature applications\, Dr. Gu presented multiple functional circuit blocks including temperature sensors\, voltage reference generators\, over-temperature protection (OTP )\, undervoltage lockout (UVLO)\, and PWM control modules. His team’s wo rk bridges the gap between device-level modeling (using calibrated ASM-HEM T models) and circuit-level integration\, demonstrating high efficiency an d compactness in 48V-to-1V DC-DC converter designs.\n\nFollowing a short i ntermission\, the colloquium hosted a student research showcase\, where XJ TLU postgraduate students Chao Wang\, Xuanming Zhang\, Maoqing Ling\, Yan Liu\, and Pingyu Cao presented their recent work on GaN material engineeri ng\, device optimization\, and simulation techniques. Their presentations reflected the strength of emerging talent in wide-bandgap semiconductor re search at XJTLU.\n\nThe final keynote was delivered by Dr. Shuilin Tian\, Senior Director of Product Design and Application at Innoscience Technolog y. His talk\, “High-Frequency Application of GaN Power Devices”\, prov ided a comprehensive comparison between GaN and traditional silicon power devices. He emphasized GaN’s advantages in bandgap (3.39 eV)\, breakdown field (10× Si)\, and electron mobility (1500 cm²/V·s)\, enabling ultra -low on-resistance and high switching frequencies. For instance\, GaN devi ces have achieved 800 kHz switching in power banks with 97% efficiency\, a nd significantly reduced device sizes (down to 1/4 of Si devices at 100 V rating). Through case studies in consumer electronics\, data centers\, and automotive systems\, Dr. Tian highlighted the compactness\, zero Qrr\, lo w Qg\, and thermal efficiency of integrated GaN solutions like InnoGaN™\ , noting future research directions such as dynamic Ron\, threshold voltag e stability\, and paralleled device reliability.\n\nToward Deeper Collabor ation in GaN Innovation: This colloquium served not only as a platform for academic exchange but also as a springboard for future collaboration betw een . Attendees expressed strong interest in strengthening the links betwe en research\, education\, and industrial deployment in the GaN field. XJTL U will continue to promote interdisciplinary innovation in wide-bandgap se miconductors\, fostering talent development\, technological translation\, and long-term partnership to support China’s next-generation semiconduct or industry.\n\nCo-sponsored by: XJTLU Adavanced Semiconductor Research Ce nter (ASRC)\n\nRoom: BS4114\, Bldg: IBSS Building \, Xi’an Jiaotong-Li verpool University (XJTLU) \, 111 Ren’ai Road \, Suzhou\, Jiangsu\, Chin a\, 215123 LOCATION:Room: BS4114\, Bldg: IBSS Building \, Xi’an Jiaotong-Liverpool University (XJTLU) \, 111 Ren’ai Road \, Suzhou\, Jiangsu\, China\, 215 123 ORGANIZER:wen.liu@xjtlu.edu.cn SEQUENCE:21 SUMMARY:FET100 Celebration: Colloquium on Industry–Academia–Research Co llaborative Innovation in GaN Technology URL;VALUE=URI:https://events.vtools.ieee.org/m/497191 X-ALT-DESC:Description: <br /><p class="MsoNormal"><span style="mso-fareast -language: ZH-CN\;">&nbsp\;<img src="https://events.vtools.ieee.org/vtools _ui/media/display/91114fd1-4bc1-4929-8bc1-a01718ebd0f3"></span></p>\n<p cl ass="MsoNormal">&nbsp\;</p>\n<p class="MsoNormal"><span style="mso-fareast -language: ZH-CN\;">In celebration of the&nbsp\;<strong>100th anniversary of the invention of the field-effect transistor (FET)</strong>\, the <stro ng><em>FET100 Celebration Activity: Colloquium on Industry&ndash\;Academia &ndash\;Research Collaborative Innovation in GaN Technology</em> </strong> was successfully held at Room BS4114\, IBSS Building\, SIP South Campus of <span style="color: rgb(0\, 0\, 0)\;"><strong>Xi&rsquo\;an Jiaotong-Liver pool University (XJTLU)</strong></span>. The event was jointly organized b y the IEEE CASS-EDS Suzhou Joint Chapter\, the IEEE CASS-EDS XJTLU Student Branch Chapter\, and the XJTLU Advanced Semiconductor Research Center. <s trong>The colloquium was initiated and chaired by Associate Professor Wen Liu</strong>\, and jointly coordinated by <strong>Ms. Yu Hu </strong>and < strong>Ms. Jiao Li</strong>\, attracting enthusiastic participation from f aculty\, students\, and industry representatives.</span></p>\n<p class="Ms oNormal"><span style="mso-fareast-language: ZH-CN\;">This colloquium focus ed on the <strong>cutting-edge advancements and interdisciplinary collabor ation in Gallium Nitride (GaN) power electronics\, </strong>featuring keyn ote presentations from experts representing <strong>Nanjing University\, I nnoscience Technology\, and XJTLU</strong>\, as well as research showcases by student teams working on wide-bandgap semiconductor technologies.</spa n></p>\n<p class="MsoNormal"><strong><span style="font-size: 14.0pt\; line -height: 150%\; mso-fareast-language: ZH-CN\;">Expert Keynotes: Deep Dive into GaN Technologies and Applications</span></strong></p>\n<p class="MsoN ormal"><span style="mso-fareast-language: ZH-CN\;">The event opened with a keynote speech by <strong>Dr. Dunjun Chen\, Vice Dean of the School of El ectronic Science and Engineering at Nanjing University. </strong>In his ta lk\, <strong><em>&ldquo\;Gate Dielectric Technology and Reliability Mechan ism of GaN-based Power Devices&rdquo\;</em></strong>\, Dr. Chen elaborated on the intrinsic material properties of GaN &mdash\; including its wide b andgap\, strong polarization\, and significant lattice mismatch &mdash\; a nd presented his team's latest research in BaTiO₃-based gate dielectric engineering. With optimized annealing at 400&ndash\;500&deg\;C\, the team achieved record device performance: a breakdown voltage of 1910 V\, a figu re-of-merit of 1.05 GW/cm&sup2\;\, and an average electric field strength of 1.4 MV/cm. Furthermore\, the devices demonstrated an exceptional on/off current ratio of 4.1&times\;10⁹\, subthreshold swing of 70.6 mV/dec\, a nd saturation current of 508 mA/mm. Dr. Chen also introduced advancements in p-NiO gate structures\, which significantly improved hole concentration and carrier mobility.</span></p>\n<p class="MsoNormal"><span style="mso-f areast-language: ZH-CN\;">The second talk was delivered by <strong>Dr. Jia ngmin Gu</strong><em>\, </em>Associate Professor at the School of Intellig ent Engineering\, XJTLU. His presentation\, <em>&ldquo\;S<strong>ub-Block Design for Monolithic PMIC Based on GaN HEMT Technology&rdquo\;</strong></ em><strong>\,</strong> focused on system-level design of monolithic GaN po wer management ICs (PMICs). Highlighting the superior performance of GaN i n high-voltage\, high-frequency\, and high-temperature applications\, Dr. Gu presented multiple functional circuit blocks including temperature sens ors\, voltage reference generators\, over-temperature protection (OTP)\, u ndervoltage lockout (UVLO)\, and PWM control modules. His team&rsquo\;s wo rk bridges the gap between device-level modeling (using calibrated ASM-HEM T models) and circuit-level integration\, demonstrating high efficiency an d compactness in 48V-to-1V DC-DC converter designs.</span></p>\n<p class=" MsoNormal"><span style="mso-fareast-language: ZH-CN\;">Following a short i ntermission\, the colloquium hosted a student research showcase\, where <s trong>XJTLU postgraduate students Chao Wang\, Xuanming Zhang\, Maoqing Lin g\, Yan Liu\, and Pingyu Cao</strong> presented their recent work on GaN m aterial engineering\, device optimization\, and simulation techniques. The ir presentations reflected the strength of emerging talent in wide-bandgap semiconductor research at XJTLU.</span></p>\n<p class="MsoNormal"><span s tyle="mso-fareast-language: ZH-CN\;">The final keynote was delivered by <s trong>Dr. Shuilin Tian</strong>\, <strong>Senior Director of Product Desig n and Application at Innoscience Technology</strong>. His talk\, <strong>< em>&ldquo\;High-Frequency Application of GaN Power Devices&rdquo\;</em></s trong>\, provided a comprehensive comparison between GaN and traditional s ilicon power devices. He emphasized GaN&rsquo\;s advantages in bandgap (3. 39 eV)\, breakdown field (10&times\; Si)\, and electron mobility (1500 cm& sup2\;/V&middot\;s)\, enabling ultra-low on-resistance and high switching frequencies. For instance\, GaN devices have achieved 800 kHz switching in power banks with 97% efficiency\, and significantly reduced device sizes (down to 1/4 of Si devices at 100 V rating). Through case studies in consu mer electronics\, data centers\, and automotive systems\, Dr. Tian highlig hted the compactness\, zero <em>Q<sub>rr</sub></em>\, low <em>Q<sub>g</sub ></em>\, and thermal efficiency of integrated GaN solutions like InnoGaN&t rade\;\, noting future research directions such as dynamic Ron\, threshold voltage stability\, and paralleled device reliability.</span></p>\n<p cla ss="MsoNormal"><strong><span style="font-size: 14.0pt\; line-height: 150%\ ; mso-fareast-language: ZH-CN\;">Toward Deeper Collaboration in GaN Innova tion: </span></strong><span style="mso-fareast-language: ZH-CN\;">This col loquium served not only as a platform for academic exchange but also as a springboard for future collaboration between . Attendees expressed strong interest in strengthening the links between research\, education\, and ind ustrial deployment in the GaN field. </span><span style="mso-fareast-langu age: ZH-CN\;">XJTLU will continue to promote interdisciplinary innovation in wide-bandgap semiconductors\, fostering talent development\, technologi cal translation\, and long-term partnership to support China&rsquo\;s next -generation semiconductor industry.</span></p> END:VEVENT END:VCALENDAR