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BEGIN:VEVENT
DTSTAMP:20250824T185401Z
UID:9F47828C-C082-4BBD-B158-D6A9131E35C6
DTSTART;TZID=Europe/Zurich:20250821T110000
DTEND;TZID=Europe/Zurich:20250821T121500
DESCRIPTION:Bipolar junction transistor (BJT)-based temperature sensors hav
 e long been the standard for achieving high accuracy in integrated thermal
  sensing. Their operation relies on well-understood device physics\, where
  proportional-to-absolute-temperature (PTAT) and/or complementary-to-absol
 ute-temperature (CTAT) voltages provide a precise mapping to temperature. 
 The classic switched-capacitor (SC) readout architecture enabled accuracie
 s on the order of 60 mK\, but its performance is limited by kT/C noise and
  its minimum supply voltage around 1.4 V.\n\nThis talk introduces new idea
 s that overcome the conventional energy efficiency limits. The capacitivel
 y biased diode (CBD) technique enables accurate biasing under supply volta
 ges below 1 V\, thereby expanding the applicability of BJT sensors to mode
 rn low-power systems. In addition\, continuous-time (CT) readout architect
 ures have emerged\, which directly digitize IPTAT and ICTAT signals\, elim
 inating kT/C noise concerns and improving energy efficiency. Together\, th
 ese advances enable a significant step toward overcoming practical barrier
 s and approaching the fundamental accuracy and efficiency limits of BJT-ba
 sed temperature sensors.\n\nSpeaker(s): \, Prof. Kofi Makinwa\n\nRoom: E81
 \, Bldg: ETZ building\, Gloriastrasse 35\, Zurich\, Switzerland\, Switzerl
 and\, 8092\, Virtual: https://events.vtools.ieee.org/m/497308
LOCATION:Room: E81\, Bldg: ETZ building\, Gloriastrasse 35\, Zurich\, Switz
 erland\, Switzerland\, 8092\, Virtual: https://events.vtools.ieee.org/m/49
 7308
ORGANIZER:tkjang@ethz.ch
SEQUENCE:25
SUMMARY:Advances in BJT-based temperature sensors by Prof. Kofi Makinwa
URL;VALUE=URI:https://events.vtools.ieee.org/m/497308
X-ALT-DESC:Description: <br /><p class="x_MsoNormal" data-olk-copy-source="
 MessageBody">Bipolar junction transistor (BJT)-based temperature sensors h
 ave long been the standard for achieving high accuracy in integrated therm
 al sensing. Their operation relies on well-understood device physics\, whe
 re proportional-to-absolute-temperature (PTAT) and/or complementary-to-abs
 olute-temperature (CTAT) voltages provide a precise mapping to temperature
 . The classic switched-capacitor (SC) readout architecture enabled accurac
 ies on the order of 60 mK\, but its performance is limited by kT/C noise a
 nd its minimum supply voltage around 1.4 V.</p>\n<p class="x_MsoNormal">Th
 is talk introduces new ideas that overcome the conventional energy efficie
 ncy limits. The capacitively biased diode (CBD) technique enables accurate
  biasing under supply voltages below 1 V\, thereby expanding the applicabi
 lity of BJT sensors to modern low-power systems. In addition\, continuous-
 time (CT) readout architectures have emerged\, which directly digitize IPT
 AT and ICTAT signals\, eliminating kT/C noise concerns and improving energ
 y efficiency. Together\, these advances enable a significant step toward o
 vercoming practical barriers and approaching the fundamental accuracy and 
 efficiency limits of BJT-based temperature sensors.</p>
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