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VERSION:2.0
PRODID:IEEE vTools.Events//EN
CALSCALE:GREGORIAN
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TZID:America/Mexico_City
BEGIN:STANDARD
DTSTART:20221030T010000
TZOFFSETFROM:-0500
TZOFFSETTO:-0600
TZNAME:CST
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BEGIN:VEVENT
DTSTAMP:20251201T162657Z
UID:30589B11-3CB6-4470-8A53-AADC74A7A181
DTSTART;TZID=America/Mexico_City:20251126T090000
DTEND;TZID=America/Mexico_City:20251126T134000
DESCRIPTION:The IEEE Electron Devices Society (EDS) Cinvestav Zacatenco Stu
 dent Chapter\, in collaboration with the Department of Electrical Engineer
 ing – Section of Solid-State Electronics (SEES)\, Cinvestav\, is pleased
  to host two IEEE EDS Distinguished Lectures as part of the global FET100 
 campaign\, celebrating 100 years of the Field-Effect Transistor.\n\nThis t
 echnical session is part of the Symposium on Electronic Devices and Solid-
 State Physics within the 2nd IEEE-Cinvestav Multidisciplinary Congress (CM
 IC 2025) and will feature two invited Distinguished Lecturers:\n\n• Dr. 
 Alba Ávila – “100 Years of the Field-Effect Transistor and Its Transf
 ormative Impact on Technology and Society”\n• Dr. Roberto S. Murphy 
 – “Semiconductor Devices and Passive Components Characterization for H
 igh-Frequency Applications”\n\nThe event aims to celebrate the centennia
 l of the Field-Effect Transistor by highlighting both its historical relev
 ance and its ongoing impact on science\, technology\, and society. It will
  bring together students\, researchers\, and professionals interested in e
 lectronics\, semiconductors\, and solid-state devices.\n\nCo-sponsored by:
  Department of Electrical Engineering – Section of Solid-State Electroni
 cs (SEES)\, Cinvestav\, Mexico\; \n\nSpeaker(s): Alba Ávila\, PhD\, Rober
 to Murphy\, PhD\n\nAgenda: \nMTM_10-2025 – Schedule\n\nTime	Activity	Spe
 aker\n09:00 - 09:05	Opening and Welcome Remarks\nHost and facilitator\n\n0
 9:05 - 10:00	100 Years of the Field-Effect Transistor and Its Transformati
 ve Impact on Technology and Society\nAlva Ávila G. Bernal\, PhD.– Disti
 nguished Lecturer\n\n12:35 – 13:30	Semiconductor Devices and Passive Com
 ponents\nCharacterization for High Frequency Applications	Roberto S. Murph
 y Arteaga\, PhD. – Distinguished Lecturer\n13:30 - 13:40	Closing Remarks
  and Acknowledgments	host and facilitator\n\nRoom: Secretaría académica/
 Metodología y teoría...\, Bldg: Cinvestav\, Avenida Instituto Politécni
 co Nacional 2508\, Colonia San Pedro Zacatenco\, Miguel Bernard La Escaler
 a\, Mexico City\, Mexico\, Mexico\, 07360\, Virtual: https://events.vtools
 .ieee.org/m/502484
LOCATION:Room: Secretaría académica/Metodología y teoría...\, Bldg: Cin
 vestav\, Avenida Instituto Politécnico Nacional 2508\, Colonia San Pedro 
 Zacatenco\, Miguel Bernard La Escalera\, Mexico City\, Mexico\, Mexico\, 0
 7360\, Virtual: https://events.vtools.ieee.org/m/502484
ORGANIZER:anisleidy.broche.f@cinvestav.mx
SEQUENCE:36
SUMMARY:FET100 Simposio de Dispositivos Electrónicos y Física del Estado 
 Sólido
URL;VALUE=URI:https://events.vtools.ieee.org/m/502484
X-ALT-DESC:Description: &lt;br /&gt;&lt;p style=&quot;text-align: justify\;&quot; data-start=&quot;
 345&quot; data-end=&quot;700&quot;&gt;The IEEE Electron Devices Society (EDS) Cinvestav Zaca
 tenco Student Chapter\, in collaboration with the Department of Electrical
  Engineering &amp;ndash\; Section of Solid-State Electronics (SEES)\, Cinvesta
 v\, is pleased to host two IEEE EDS Distinguished Lectures as part of the 
 global &lt;strong data-start=&quot;618&quot; data-end=&quot;628&quot;&gt;FET100&lt;/strong&gt; campaign\, 
 celebrating 100 years of the Field-Effect Transistor.&lt;/p&gt;\n&lt;p style=&quot;text-
 align: justify\;&quot; data-start=&quot;702&quot; data-end=&quot;928&quot;&gt;This technical session i
 s part of the &lt;strong data-start=&quot;740&quot; data-end=&quot;799&quot;&gt;Symposium on Electro
 nic Devices and Solid-State Physics&lt;/strong&gt; within the &lt;strong data-start
 =&quot;811&quot; data-end=&quot;872&quot;&gt;2nd IEEE-Cinvestav Multidisciplinary Congress (CMIC 
 2025)&lt;/strong&gt; and will feature two invited Distinguished Lecturers:&lt;/p&gt;\n
 &lt;p style=&quot;text-align: justify\;&quot; data-start=&quot;930&quot; data-end=&quot;1238&quot;&gt;&amp;bull\; 
 &lt;strong data-start=&quot;932&quot; data-end=&quot;987&quot;&gt;Dr. Alba &amp;Aacute\;vila&amp;nbsp\;&lt;/str
 ong&gt;&amp;ndash\; &lt;em data-start=&quot;990&quot; data-end=&quot;1090&quot;&gt;&amp;ldquo\;100 Years of the
  Field-Effect Transistor and Its Transformative Impact on Technology and S
 ociety&amp;rdquo\;&lt;/em&gt;&lt;br data-start=&quot;1090&quot; data-end=&quot;1093&quot;&gt;&amp;bull\; &lt;strong d
 ata-start=&quot;1095&quot; data-end=&quot;1136&quot;&gt;Dr. Roberto S. Murphy&amp;nbsp\;&lt;/strong&gt;&amp;nda
 sh\; &lt;em data-start=&quot;1139&quot; data-end=&quot;1236&quot;&gt;&amp;ldquo\;Semiconductor Devices a
 nd Passive Components Characterization for High-Frequency Applications&amp;rdq
 uo\;&lt;/em&gt;&lt;/p&gt;\n&lt;p style=&quot;text-align: justify\;&quot; data-start=&quot;1240&quot; data-end
 =&quot;1553&quot;&gt;The event aims to celebrate the centennial of the Field-Effect Tra
 nsistor by highlighting both its historical relevance and its ongoing impa
 ct on science\, technology\, and society. It will bring together students\
 , researchers\, and professionals interested in electronics\, semiconducto
 rs\, and solid-state devices.&lt;/p&gt;&lt;br /&gt;&lt;br /&gt;Agenda: &lt;br /&gt;&lt;h3 style=&quot;text
 -align: center\;&quot; data-start=&quot;430&quot; data-end=&quot;463&quot;&gt;MTM_10-2025 &amp;ndash\; Sch
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 &quot; data-start=&quot;465&quot; data-end=&quot;646&quot;&gt;\n&lt;th style=&quot;width: 22.2433%\; height: 2
 2.3906px\; text-align: center\;&quot; data-start=&quot;465&quot; data-end=&quot;485&quot; data-col-
 size=&quot;md&quot;&gt;&lt;strong data-start=&quot;467&quot; data-end=&quot;475&quot;&gt;Time&lt;/strong&gt;&lt;/th&gt;\n&lt;th 
 style=&quot;width: 57.5912%\; height: 22.3906px\; text-align: center\;&quot; data-st
 art=&quot;485&quot; data-end=&quot;580&quot; data-col-size=&quot;md&quot;&gt;&lt;strong data-start=&quot;487&quot; data-
 end=&quot;499&quot;&gt;&amp;nbsp\; &amp;nbsp\; Activity&lt;/strong&gt;&lt;/th&gt;\n&lt;th style=&quot;width: 20.174
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 646&quot; data-col-size=&quot;sm&quot;&gt;&lt;strong data-start=&quot;582&quot; data-end=&quot;593&quot;&gt;Speaker&lt;/s
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 r&gt;\n&lt;td style=&quot;width: 22.2433%\; text-align: center\;&quot;&gt;09:00 - 09:05&lt;/td&gt;\
 n&lt;td style=&quot;width: 57.5912%\; text-align: center\;&quot;&gt;Opening and Welcome Re
 marks&lt;/td&gt;\n&lt;td style=&quot;width: 20.1742%\; text-align: center\;&quot;&gt;\n&lt;p&gt;Host a
 nd facilitator&lt;/p&gt;\n&lt;/td&gt;\n&lt;/tr&gt;\n&lt;tr&gt;\n&lt;td style=&quot;width: 22.2433%\; text-
 align: center\;&quot;&gt;09:05 - 10:00&lt;/td&gt;\n&lt;td style=&quot;width: 57.5912%\; text-ali
 gn: center\;&quot;&gt;100 Years of the Field-Effect Transistor and Its Transformat
 ive Impact on Technology and Society&lt;/td&gt;\n&lt;td style=&quot;width: 20.1742%\; te
 xt-align: center\;&quot;&gt;\n&lt;p&gt;&lt;strong&gt;Alva &amp;Aacute\;vila G. Bernal\, PhD.&lt;/stro
 ng&gt;&amp;ndash\; Distinguished Lecturer&lt;/p&gt;\n&lt;/td&gt;\n&lt;/tr&gt;\n&lt;tr style=&quot;height: 4
 4.7812px\;&quot; data-start=&quot;828&quot; data-end=&quot;1009&quot;&gt;\n&lt;td style=&quot;width: 22.2433%\
 ; height: 44.7812px\; text-align: center\;&quot; data-start=&quot;1010&quot; data-end=&quot;10
 30&quot; data-col-size=&quot;md&quot;&gt;12:35 &amp;ndash\; 13:30&lt;/td&gt;\n&lt;td style=&quot;width: 57.591
 2%\; height: 44.7812px\; text-align: center\;&quot; data-start=&quot;1030&quot; data-end=
 &quot;1125&quot; data-col-size=&quot;md&quot;&gt;Semiconductor Devices and Passive Components&amp;nbs
 p\;&lt;br&gt;Characterization for High Frequency Applications&amp;nbsp\;&lt;/td&gt;\n&lt;td s
 tyle=&quot;width: 20.1742%\; height: 44.7812px\; text-align: center\;&quot; data-sta
 rt=&quot;1125&quot; data-end=&quot;1152&quot; data-col-size=&quot;sm&quot;&gt;&lt;strong data-start=&quot;662&quot; data
 -end=&quot;689&quot;&gt;Roberto S. Murphy Arteaga\, PhD.&lt;/strong&gt; &amp;ndash\; Distinguishe
 d Lecturer&lt;/td&gt;\n&lt;/tr&gt;\n&lt;tr style=&quot;height: 44.7812px\;&quot; data-start=&quot;1010&quot; 
 data-end=&quot;1152&quot;&gt;\n&lt;td style=&quot;width: 22.2433%\; height: 44.7812px\; text-al
 ign: center\;&quot; data-start=&quot;1010&quot; data-end=&quot;1030&quot; data-col-size=&quot;md&quot;&gt;13:30 
 - 13:40&lt;/td&gt;\n&lt;td style=&quot;width: 57.5912%\; height: 44.7812px\; text-align:
  center\;&quot; data-start=&quot;1030&quot; data-end=&quot;1125&quot; data-col-size=&quot;md&quot;&gt;Closing Re
 marks and Acknowledgments&lt;/td&gt;\n&lt;td style=&quot;width: 20.1742%\; height: 44.78
 12px\; text-align: center\;&quot; data-start=&quot;1125&quot; data-end=&quot;1152&quot; data-col-si
 ze=&quot;sm&quot;&gt;host and facilitator&lt;/td&gt;\n&lt;/tr&gt;\n&lt;/tbody&gt;\n&lt;/table&gt;\n&lt;/div&gt;\n&lt;/di
 v&gt;
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