BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Los_Angeles BEGIN:DAYLIGHT DTSTART:20260308T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20251102T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20251121T182246Z UID:05289317-3497-4E2E-86DB-342503EE6C40 DTSTART;TZID=America/Los_Angeles:20251119T180000 DTEND;TZID=America/Los_Angeles:20251119T200000 DESCRIPTION:Millimeter-wave (mmWave) power amplifiers (PAs) are critical bu ilding blocks in next-generation radar\, satellite\, defense\, and 6G comm unication systems\, where output power\, bandwidth\, and efficiency must b e achieved under stringent size\, weight\, and power (SWaP) constraints. A mong the enabling technologies\, Gallium Arsenide (GaAs) and Gallium Nitri de (GaN) continue to dominate due to their complementary strengths in line arity\, noise performance\, and high-power density.\n\nThis talk will focu s on design considerations unique to mmWave GaAs and GaN PAs\, with partic ular emphasis on stability and biasing challenges at frequencies above 20 GHz. Unlike lower microwave designs\, mmWave PAs are highly susceptible to low-frequency oscillations\, odd-mode instabilities\, and bias-induced re sonances. To mitigate these\, stability networks—ranging from RC shunt l oading and resistive feedback to series loading and quarter-wave stabiliza tion—must be co-optimized with matching and biasing schemes. Special att ention will be given to the integration of stability networks with bias ne tworks\, where parasitics from bias chokes\, decoupling capacitors\, and h igh-impedance bias lines can introduce additional poles/zeros in the respo nse\, affecting both gain flatness and unconditional stability.\n\nThe pre sentation will review practical approaches to stabilizing mmWave PAs witho ut compromising efficiency or bandwidth\, including the use of lossy trans mission lines\, broadband bias tees\, and RC filtering strategies tailored for GaAs vs. GaN processes. Case studies will illustrate how bias network design impacts stability margins and overall PA performance\, and how dis tributed versus lumped stabilization choices evolve with frequency. The se ssion will conclude with a discussion of packaging and integration conside rations\, where bondwire inductances\, via transitions\, and LTCC/SiP bias routing play a defining role in amplifier stability at mmWave frequencies .\n\nSpeaker(s): Asmita Dani\, \n\nRoom: 4021\, Bldg: Sobrato Campus for D iscovery and Innovation\, Santa Clara University\, 500 El Camino Real\, Sa nta Clara\, California\, United States\, 95054\, Virtual: https://events.v tools.ieee.org/m/505939 LOCATION:Room: 4021\, Bldg: Sobrato Campus for Discovery and Innovation\, S anta Clara University\, 500 El Camino Real\, Santa Clara\, California\, Un ited States\, 95054\, Virtual: https://events.vtools.ieee.org/m/505939 ORGANIZER:VVI4HC@VIRGINIA.EDU SEQUENCE:55 SUMMARY:Stability & Biasing in mmWave GaAs/GaN PAs: Challenges and Solution s URL;VALUE=URI:https://events.vtools.ieee.org/m/505939 X-ALT-DESC:Description: <br /><p dir="ltr">Millimeter-wave (mmWave) power a mplifiers (PAs) are critical building blocks in next-generation radar\, sa tellite\, defense\, and 6G communication systems\, where output power\, ba ndwidth\, and efficiency must be achieved under stringent size\, weight\, and power (SWaP) constraints. Among the enabling technologies\, Gallium Ar senide (GaAs) and Gallium Nitride (GaN) continue to dominate due to their complementary strengths in linearity\, noise performance\, and high-power density.</p>\n<p dir="ltr">This talk will focus on design considerations u nique to mmWave GaAs and GaN PAs\, with particular emphasis on stability a nd biasing challenges at frequencies above 20 GHz. Unlike lower microwave designs\, mmWave PAs are highly susceptible to low-frequency oscillations\ , odd-mode instabilities\, and bias-induced resonances. To mitigate these\ , stability networks&mdash\;ranging from RC shunt loading and resistive fe edback to series loading and quarter-wave stabilization&mdash\;must be co- optimized with matching and biasing schemes. Special attention will be giv en to the integration of stability networks with bias networks\, where par asitics from bias chokes\, decoupling capacitors\, and high-impedance bias lines can introduce additional poles/zeros in the response\, affecting bo th gain flatness and unconditional stability.</p>\n<p dir="ltr">The presen tation will review practical approaches to stabilizing mmWave PAs without compromising efficiency or bandwidth\, including the use of lossy transmis sion lines\, broadband bias tees\, and RC filtering strategies tailored fo r GaAs vs. GaN processes. Case studies will illustrate how bias network de sign impacts stability margins and overall PA performance\, and how distri buted versus lumped stabilization choices evolve with frequency. The sessi on will conclude with a discussion of packaging and integration considerat ions\, where bondwire inductances\, via transitions\, and LTCC/SiP bias ro uting play a defining role in amplifier stability at mmWave frequencies.</ p>\n<p>&nbsp\;</p> END:VEVENT END:VCALENDAR