BEGIN:VCALENDAR
VERSION:2.0
PRODID:IEEE vTools.Events//EN
CALSCALE:GREGORIAN
BEGIN:VTIMEZONE
TZID:America/Chicago
BEGIN:DAYLIGHT
DTSTART:20250309T030000
TZOFFSETFROM:-0600
TZOFFSETTO:-0500
RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3
TZNAME:CDT
END:DAYLIGHT
BEGIN:STANDARD
DTSTART:20251102T010000
TZOFFSETFROM:-0500
TZOFFSETTO:-0600
RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11
TZNAME:CST
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTAMP:20251024T151456Z
UID:B8F69C31-E314-43B6-AFDC-082764E15E05
DTSTART;TZID=America/Chicago:20251021T110000
DTEND;TZID=America/Chicago:20251021T120000
DESCRIPTION:Speaker: Sanjeev Aggarwal\, Everspin Technologies\, Inc.\n\nDat
 e: October 21\, 2025\n\nTime: 11 AM – 12 PM\n\nLocation: Bldg. 222\, Roo
 m A229\,\n\nArgonne National Laboratory\, 9700 S Cass Ave\, Lemont\, IL 60
 439\n\nOnline Team link:\n\nhttps://gcc02.safelinks.protection.outlook.com
 /?url=https%3A%2F%2Furldefense.us%2Fv3%2F__https%3A%2F%2Fteams.microsoft.c
 om%2Fdl%2Flauncher%2Flauncher.html%3Furl%3D*_*23*l*meetup-join*19*3Ameetin
 g_OTI2MTE2NWQtNDY2Yi00YmQ0LWIyMGYtYWFjZDdiZjA5NDQ3*40thread.v2*0*3Fcontext
 *3D*257b*2522Tid*2522*253a*25220cfca185-25f7-49e3-8ae7-704d5326e285*2522*2
 52c*2522Oid*2522*253a*2522a8ae4553-86d9-421a-82d0-c175112acee8*2522*257d*2
 6anon*3Dtrue%26type%3Dmeetup-join%26deeplinkId%3Da2e835d6-81f8-46e1-9dee-7
 ce756d9502d%26directDl%3Dtrue%26msLaunch%3Dtrue%26enableMobilePage%3Dtrue%
 26suppressPrompt%3Dtrue__%3BLyUvLy8lJS8lJSUlJSUlJSUlJSUlJSUlJQ!!G_uCfscf7e
 WS!bbsbpfxNEW0jHTmuEG0MgdF3wpnpUPJDAake-QfIRKI0eCBHplIk53iCVLGu8TNgHCE71RY
 AbeyDPqCHQoRGtBn3e4Xq34Njgg%24&amp;data=05%7C02%7Cyili%40anlmail.anl.gov%7C8b2
 57678523844f7ad5108de0ff0e7e0%7C0cfca18525f749e38ae7704d5326e285%7C0%7C0%7
 C638965724539437598%7CUnknown%7CTWFpbGZsb3d8eyJFbXB0eU1hcGkiOnRydWUsIlYiOi
 IwLjAuMDAwMCIsIlAiOiJXaW4zMiIsIkFOIjoiTWFpbCIsIldUIjoyfQ%3D%3D%7C0%7C%7C%7
 C&amp;sdata=XurtJiJzFFpvAms%2BtQLcIDD0mjPUpJjgcERctGuJ8l0%3D&amp;reserved=0\n\nAbs
 tract: Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRA
 M) products are being deployed in a wide range of applications\, such as d
 ata centers\, industrial products\, wearable devices and aerospace technol
 ogies.\n\nDuring this talk\, we will discuss our work on tuning the STT Ma
 gnetic Tunnel Junctions bit to enable unlimited read/write endurance with 
 20+ years of data retention at extreme temperatures to a One Time Programm
 able extremely fast writes for configuration and artificial intelligence (
 AI) applications.\n\nWe will describe Everspin’s latest STT-MRAM product
  family\, which is aimed at industrial applications requiring low-latency\
 , high-speed\, low bit error rate and high reliability. The STT-MRAM is bu
 ilt on GlobalFoundries’ 28nm Complementary Metal-Oxide-Semiconductor\, u
 ses an expanded SPI interface and is offered in densities from 4Mb to 128M
 b. This talk addresses enhancements to our STT-MRAM technology to enable a
 utomotive applications up to AEC-Q100 Grade 1.\n\nWe will present examples
  of MRAM adoption in the industry and use cases that highlight the benefit
 s of MRAM versus standard memory. We will briefly touch on forward looking
  technologies in development to address storage and AI applications.\n\nCo
 -sponsored by: IEEE Chicago\, IEEE NTC Young Professionals\n\n9700 S Cass 
 Ave\, Bldg. 222\, Room A229\, LEMONT\, Illinois\, United States\, 60439\, 
 Virtual: https://events.vtools.ieee.org/m/508767
LOCATION:9700 S Cass Ave\, Bldg. 222\, Room A229\, LEMONT\, Illinois\, Unit
 ed States\, 60439\, Virtual: https://events.vtools.ieee.org/m/508767
ORGANIZER:yili@anl.gov
SEQUENCE:23
SUMMARY:(Oct. 21\, 2025)Versatile Spin Transfer Torque or Magnetoresistive 
 Random Access Memory for Memory Markets
URL;VALUE=URI:https://events.vtools.ieee.org/m/508767
X-ALT-DESC:Description: &lt;br /&gt;&lt;p&gt;&lt;strong data-olk-copy-source=&quot;MessageBody&quot;
 &gt;Speaker:&lt;/strong&gt; Sanjeev Aggarwal\, Everspin Technologies\, Inc.&lt;/p&gt;\n&lt;p
  class=&quot;x_elementToProof&quot;&gt;&lt;strong data-olk-copy-source=&quot;MessageBody&quot;&gt;Date:
 &lt;/strong&gt;&amp;nbsp\;October 21\, 2025&lt;/p&gt;\n&lt;p class=&quot;x_elementToProof&quot;&gt;&lt;strong
 &gt;Time:&lt;/strong&gt;&amp;nbsp\;11 AM &amp;ndash\; 12 PM&lt;/p&gt;\n&lt;p class=&quot;x_elementToProof
 &quot;&gt;&lt;strong&gt;Location:&lt;/strong&gt; Bldg. 222\, Room A229\,&lt;/p&gt;\n&lt;p class=&quot;x_elem
 entToProof&quot;&gt;Argonne National Laboratory\, 9700 S Cass Ave\, Lemont\, IL 60
 439&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;Online Team link:&lt;/strong&gt;&lt;/p&gt;\n&lt;p&gt;&lt;a href=&quot;https://gc
 c02.safelinks.protection.outlook.com/?url=https%3A%2F%2Furldefense.us%2Fv3
 %2F__https%3A%2F%2Fteams.microsoft.com%2Fdl%2Flauncher%2Flauncher.html%3Fu
 rl%3D*_*23*l*meetup-join*19*3Ameeting_OTI2MTE2NWQtNDY2Yi00YmQ0LWIyMGYtYWFj
 ZDdiZjA5NDQ3*40thread.v2*0*3Fcontext*3D*257b*2522Tid*2522*253a*25220cfca18
 5-25f7-49e3-8ae7-704d5326e285*2522*252c*2522Oid*2522*253a*2522a8ae4553-86d
 9-421a-82d0-c175112acee8*2522*257d*26anon*3Dtrue%26type%3Dmeetup-join%26de
 eplinkId%3Da2e835d6-81f8-46e1-9dee-7ce756d9502d%26directDl%3Dtrue%26msLaun
 ch%3Dtrue%26enableMobilePage%3Dtrue%26suppressPrompt%3Dtrue__%3BLyUvLy8lJS
 8lJSUlJSUlJSUlJSUlJSUlJQ!!G_uCfscf7eWS!bbsbpfxNEW0jHTmuEG0MgdF3wpnpUPJDAak
 e-QfIRKI0eCBHplIk53iCVLGu8TNgHCE71RYAbeyDPqCHQoRGtBn3e4Xq34Njgg%24&amp;amp\;da
 ta=05%7C02%7Cyili%40anlmail.anl.gov%7C8b257678523844f7ad5108de0ff0e7e0%7C0
 cfca18525f749e38ae7704d5326e285%7C0%7C0%7C638965724539437598%7CUnknown%7CT
 WFpbGZsb3d8eyJFbXB0eU1hcGkiOnRydWUsIlYiOiIwLjAuMDAwMCIsIlAiOiJXaW4zMiIsIkF
 OIjoiTWFpbCIsIldUIjoyfQ%3D%3D%7C0%7C%7C%7C&amp;amp\;sdata=XurtJiJzFFpvAms%2BtQ
 LcIDD0mjPUpJjgcERctGuJ8l0%3D&amp;amp\;reserved=0&quot;&gt;https://gcc02.safelinks.prot
 ection.outlook.com/?url=https%3A%2F%2Furldefense.us%2Fv3%2F__https%3A%2F%2
 Fteams.microsoft.com%2Fdl%2Flauncher%2Flauncher.html%3Furl%3D*_*23*l*meetu
 p-join*19*3Ameeting_OTI2MTE2NWQtNDY2Yi00YmQ0LWIyMGYtYWFjZDdiZjA5NDQ3*40thr
 ead.v2*0*3Fcontext*3D*257b*2522Tid*2522*253a*25220cfca185-25f7-49e3-8ae7-7
 04d5326e285*2522*252c*2522Oid*2522*253a*2522a8ae4553-86d9-421a-82d0-c17511
 2acee8*2522*257d*26anon*3Dtrue%26type%3Dmeetup-join%26deeplinkId%3Da2e835d
 6-81f8-46e1-9dee-7ce756d9502d%26directDl%3Dtrue%26msLaunch%3Dtrue%26enable
 MobilePage%3Dtrue%26suppressPrompt%3Dtrue__%3BLyUvLy8lJS8lJSUlJSUlJSUlJSUl
 JSUlJQ!!G_uCfscf7eWS!bbsbpfxNEW0jHTmuEG0MgdF3wpnpUPJDAake-QfIRKI0eCBHplIk5
 3iCVLGu8TNgHCE71RYAbeyDPqCHQoRGtBn3e4Xq34Njgg%24&amp;amp\;data=05%7C02%7Cyili%
 40anlmail.anl.gov%7C8b257678523844f7ad5108de0ff0e7e0%7C0cfca18525f749e38ae
 7704d5326e285%7C0%7C0%7C638965724539437598%7CUnknown%7CTWFpbGZsb3d8eyJFbXB
 0eU1hcGkiOnRydWUsIlYiOiIwLjAuMDAwMCIsIlAiOiJXaW4zMiIsIkFOIjoiTWFpbCIsIldUI
 joyfQ%3D%3D%7C0%7C%7C%7C&amp;amp\;sdata=XurtJiJzFFpvAms%2BtQLcIDD0mjPUpJjgcERc
 tGuJ8l0%3D&amp;amp\;reserved=0&lt;/a&gt;&lt;/p&gt;\n&lt;div class=&quot;x_elementToProof&quot;&gt;\n&lt;p cla
 ss=&quot;x_elementToProof&quot;&gt;&amp;nbsp\;&lt;/p&gt;\n&lt;p class=&quot;x_elementToProof&quot;&gt;&lt;strong dat
 a-olk-copy-source=&quot;MessageBody&quot;&gt;Abstract:&lt;/strong&gt; Spin Transfer Torque Ma
 gnetoresistive Random Access Memory (STT-MRAM) products are being deployed
  in a wide range of applications\, such as data centers\, industrial produ
 cts\, wearable devices and aerospace technologies.&lt;/p&gt;\n&lt;/div&gt;\n&lt;div class
 =&quot;x_elementToProof&quot;&gt;\n&lt;p class=&quot;x_elementToProof&quot;&gt;During this talk\, we wi
 ll discuss our work on tuning the STT Magnetic Tunnel Junctions bit to ena
 ble unlimited read/write endurance with 20+ years of data retention at ext
 reme temperatures to a One Time Programmable extremely fast writes for con
 figuration and artificial intelligence (AI) applications.&lt;/p&gt;\n&lt;/div&gt;\n&lt;di
 v class=&quot;x_elementToProof&quot;&gt;\n&lt;p class=&quot;x_elementToProof&quot;&gt;We will describe 
 Everspin&amp;rsquo\;s latest STT-MRAM product family\, which is aimed at indus
 trial applications requiring low-latency\, high-speed\, low bit error rate
  and high reliability. The STT-MRAM is built on GlobalFoundries&amp;rsquo\; 28
 nm Complementary Metal-Oxide-Semiconductor\, uses an expanded SPI interfac
 e and is offered in densities from 4Mb to 128Mb. This talk addresses enhan
 cements to our STT-MRAM technology to enable automotive applications up to
  AEC-Q100 Grade 1.&lt;/p&gt;\n&lt;/div&gt;\n&lt;div class=&quot;x_elementToProof&quot;&gt;\n&lt;p class=&quot;
 x_elementToProof&quot;&gt;We will present examples of MRAM adoption in the industr
 y and use cases that highlight the benefits of MRAM versus standard memory
 . We will briefly touch on forward looking technologies in development to 
 address storage and AI applications.&lt;/p&gt;\n&lt;/div&gt;
END:VEVENT
END:VCALENDAR

