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DESCRIPTION:Chiral-induced spin selectivity (CISS) has emerged as a powerfu
 l route to generate spin-polarized\n\ncurrents without the need for magnet
 ic order\, offering a promising platform for future spintronic\n\napplicat
 ions [1\,2]. While conventional spintronic devices rely on a pairs of ferr
 omagnetic electrodes\,\n\nintegrating chiral molecular materials into tunn
 el junctions opens new possibilities for designing highly\n\nefficient spi
 n filters and energy-efficient spin–charge conversion architectures. In 
 this talk\, I will present\n\nour recent progress on junction devices with
  lateral π-extended helical nanographenes\, which exhibit\n\nstrong optic
 al activity and remarkably high spin polarization at room temperature. By 
 combining these\n\nchiral molecular systems with well-established tunnel b
 arrier engineering\, we aim to construct solid-\n\nstate junctions capable
  of realizing spintronic functionalities through the CISS effect [3]. We o
 bserved\n\na clear magnetoresistance at room temperature in the tunnel jun
 ction devices\, which exhibit\n\nunidirectional transport properties. This
  work builds not only on the successful synthesis of the lateral\n\nchiral
  molecules [4] but also on our extensive expertise in tunnel junction inve
 stigation\, established\n\nthrough recent studies on asymmetric tunnel jun
 ctions based on van der Waals antiferromagnetic\n\nCrSBr (Nature 2024 [5])
  or low-resistivity metal chromium (Nano Lett. 2023 [6]). I will also intr
 oduce the\n\ndesign strategies for chiral tunnel junctions\, the impact of
  molecular structure on spin-filtering efficiency\,\n\nand the outlook of 
 chiral materials tunnel junction devices. This approach paves the way towa
 rd next-\n\ngeneration molecular spintronic devices that combine functiona
 lity with scalable solid-state integration.\n\n[1] B. Bloom et al. Chem. R
 ev. 124(4)\, 2014\n\n[2] S. Ham et al. Micromachines 15(4)\, 528\, 2024\n\
 n[3] S. Yang et al.\, Nat. Rev. Phys. 3\, 328\, 2021\n\n[4] W. Niu et al. 
 Angew. Chem. Int. Ed. 63\, e202319874\, 2024\n\n[5] Y. Chen et al. Nature 
 632\, 1045\, 2024\n\n[6] C. Fang et al. Nano Lett. 23\, 11485\, 2023\n\nDr
 . Chi Fang is currently a postdoctoral researcher at the Max Planck Instit
 ute of\n\nMicrostructure Physics\, Germany. He received his Ph.D. in Conde
 nsed Matter Physics\n\nfrom the University of Chinese Academy of Sciences 
 (UCAS) in 2020 and M. S. in\n\nMaterial Engineering from UCAS in 2017. His
  research focuses on magnetic tunnel\n\njunction and spin transport in ant
 iferromagnets. Dr. Fang has published more than 30\n\npeer-reviewed papers
 \, which received over 1\,700 citations with an h-index of 20\n\naccording
  to Web of Science (WoS)\n\nRoom: 4-A014\, Bldg: institut Jean Lamour \, 5
  Allee Guinier\, Nancy\, Lorraine\, France\, 54011
LOCATION:Room: 4-A014\, Bldg: institut Jean Lamour \, 5 Allee Guinier\, Nan
 cy\, Lorraine\, France\, 54011
ORGANIZER:stephane.mangin@univ-lorraine.fr
SEQUENCE:7
SUMMARY:Assembling Chiral Materials into Tunnel Junctions
URL;VALUE=URI:https://events.vtools.ieee.org/m/509235
X-ALT-DESC:Description: &lt;br /&gt;&lt;p class=&quot;p1&quot;&gt;Chiral-induced spin selectivity
  (CISS) has emerged as a powerful route to generate spin-polarized&lt;/p&gt;\n&lt;p
  class=&quot;p1&quot;&gt;currents without the need for magnetic order\, offering a prom
 ising platform for future spintronic&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;applications [1\,2
 ]. While conventional spintronic devices rely on a pairs of ferromagnetic 
 electrodes\,&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;integrating chiral molecular materials int
 o tunnel junctions opens new possibilities for designing highly&lt;/p&gt;\n&lt;p cl
 ass=&quot;p1&quot;&gt;efficient spin filters and energy-efficient spin&amp;ndash\;charge co
 nversion architectures. In this talk\, I will present&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;o
 ur recent progress on junction devices with &lt;em&gt;lateral &amp;pi\;-extended hel
 ical nanographenes&lt;/em&gt;\, which exhibit&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;strong optical 
 activity and remarkably high spin polarization at room temperature. By com
 bining these&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;chiral molecular systems with well-establi
 shed tunnel barrier engineering\, we aim to construct solid-&lt;/p&gt;\n&lt;p class
 =&quot;p1&quot;&gt;state junctions capable of realizing spintronic functionalities thro
 ugh the CISS effect [3]. We observed&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;a clear magnetores
 istance at room temperature in the tunnel junction devices\, which exhibit
 &lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;unidirectional transport properties. This work builds 
 not only on the successful synthesis of the &lt;em&gt;lateral&lt;/em&gt;&lt;/p&gt;\n&lt;p class
 =&quot;p1&quot;&gt;chiral molecules [4] but also on our extensive expertise in tunnel j
 unction investigation\, established&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;through recent stud
 ies on asymmetric tunnel junctions based on van der Waals antiferromagneti
 c&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;CrSBr (&lt;em&gt;Nature&lt;/em&gt; 2024 [5]) or low-resistivity m
 etal chromium (&lt;em&gt;Nano Lett.&lt;/em&gt; 2023 [6]). I will also introduce the&lt;/p
 &gt;\n&lt;p class=&quot;p1&quot;&gt;design strategies for chiral tunnel junctions\, the impac
 t of molecular structure on spin-filtering efficiency\,&lt;/p&gt;\n&lt;p class=&quot;p1&quot;
 &gt;and the outlook of chiral materials tunnel junction devices. This approac
 h paves the way toward next-&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;generation molecular spint
 ronic devices that combine functionality with scalable solid-state integra
 tion.&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;[1] B. Bloom et al. Chem. Rev. 124(4)\, 2014&lt;/p&gt;\
 n&lt;p class=&quot;p1&quot;&gt;[2] S. Ham et al. Micromachines 15(4)\, 528\, 2024&lt;/p&gt;\n&lt;p 
 class=&quot;p1&quot;&gt;[3] S. Yang et al.\, Nat. Rev. Phys. 3\, 328\, 2021&lt;/p&gt;\n&lt;p cla
 ss=&quot;p1&quot;&gt;[4] W. Niu et al. Angew. Chem. Int. Ed. 63\, e202319874\, 2024&lt;/p&gt;
 \n&lt;p class=&quot;p1&quot;&gt;[5] Y. Chen et al. Nature 632\, 1045\, 2024&lt;/p&gt;\n&lt;p class=
 &quot;p1&quot;&gt;[6] C. Fang et al. Nano Lett. 23\, 11485\, 2023&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;&lt;s
 trong&gt;Dr. Chi Fang &lt;/strong&gt;is currently a postdoctoral researcher at the 
 Max Planck Institute of&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;Microstructure Physics\, German
 y. He received his Ph.D. in Condensed Matter Physics&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;fr
 om the University of Chinese Academy of Sciences (UCAS) in 2020 and M. S. 
 in&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;Material Engineering from UCAS in 2017. His research
  focuses on magnetic tunnel&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;junction and spin transport
  in antiferromagnets. Dr. Fang has published more than 30&lt;/p&gt;\n&lt;p class=&quot;p
 1&quot;&gt;peer-reviewed papers\, which received over 1\,700 citations with an h-i
 ndex of 20&lt;/p&gt;\n&lt;p class=&quot;p1&quot;&gt;according to Web of Science (WoS)&lt;/p&gt;\n&lt;p cl
 ass=&quot;MsoNormal&quot;&gt;&lt;span lang=&quot;EN-US&quot;&gt;&amp;nbsp\;&lt;/span&gt;&lt;/p&gt;\n&lt;p class=&quot;MsoNormal
 &quot;&gt;&lt;span lang=&quot;EN-US&quot;&gt;&amp;nbsp\;&lt;/span&gt;&lt;/p&gt;
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