BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Europe/Madrid BEGIN:DAYLIGHT DTSTART:20260329T030000 TZOFFSETFROM:+0100 TZOFFSETTO:+0200 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=3 TZNAME:CEST END:DAYLIGHT BEGIN:STANDARD DTSTART:20251026T020000 TZOFFSETFROM:+0200 TZOFFSETTO:+0100 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=10 TZNAME:CET END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20251101T230235Z UID:FB585081-D6B9-4052-899C-A535C6F82B2C DTSTART;TZID=Europe/Madrid:20251107T110000 DTEND;TZID=Europe/Madrid:20251107T120100 DESCRIPTION:Assembling Chiral Materials into Tunnel Junctions\n\nChiral-ind uced spin selectivity (CISS) has emerged as a powerful route to generate s pin-polarized\n\ncurrents without the need for magnetic order\, offering a promising platform for future spintronic\n\napplications [1\,2]. While co nventional spintronic devices rely on a pairs of ferromagnetic electrodes\ ,\n\nintegrating chiral molecular materials into tunnel junctions opens ne w possibilities for designing highly\n\nefficient spin filters and energy- efficient spin–charge conversion architectures. In this talk\, I will pr esent\n\nour recent progress on junction devices with lateral π-extended helical nanographenes\, which exhibit\n\nstrong optical activity and remar kably high spin polarization at room temperature. By combining these\n\nch iral molecular systems with well-established tunnel barrier engineering\, we aim to construct solid-\n\nstate junctions capable of realizing spintro nic functionalities through the CISS effect [3]. We observed\n\na clear ma gnetoresistance at room temperature in the tunnel junction devices\, which exhibit\n\nunidirectional transport properties. This work builds not only on the successful synthesis of the lateral\n\nchiral molecules [4] but al so on our extensive expertise in tunnel junction investigation\, establish ed\n\nthrough recent studies on asymmetric tunnel junctions based on van d er Waals antiferromagnetic\n\nCrSBr (Nature 2024 [5]) or low-resistivity m etal chromium (Nano Lett. 2023 [6]). I will also introduce the\n\ndesign s trategies for chiral tunnel junctions\, the impact of molecular structure on spin-filtering efficiency\,\n\nand the outlook of chiral materials tunn el junction devices. This approach paves the way toward next-\n\ngeneratio n molecular spintronic devices that combine functionality with scalable so lid-state integration.\n\n[1] B. Bloom et al. Chem. Rev. 124(4)\, 2014\n\n [2] S. Ham et al. Micromachines 15(4)\, 528\, 2024\n\n[3] S. Yang et al.\, Nat. Rev. Phys. 3\, 328\, 2021\n\n[4] W. Niu et al. Angew. Chem. Int. Ed. 63\, e202319874\, 2024\n\n[5] Y. Chen et al. Nature 632\, 1045\, 2024\n\n [6] C. Fang et al. Nano Lett. 23\, 11485\, 2023\n\nDr. Chi Fang is current ly a postdoctoral researcher at the Max Planck Institute of\n\nMicrostruct ure Physics\, Germany. He received his Ph.D. in Condensed Matter Physics\n \nfrom the University of Chinese Academy of Sciences (UCAS) in 2020 and M. S. in\n\nMaterial Engineering from UCAS in 2017. His research focuses on magnetic tunnel\n\njunction and spin transport in antiferromagnets. Dr. Fa ng has published more than 30\n\npeer-reviewed papers\, which received ove r 1\,700 citations with an h-index of 20\n\naccording to Web of Science (W oS).\n\nRoom: 4-A014\, Bldg: Institut Jean Lamour \, 5 Allee Guinier\, Nan cy\, Lorraine\, France\, 54011 LOCATION:Room: 4-A014\, Bldg: Institut Jean Lamour \, 5 Allee Guinier\, Nan cy\, Lorraine\, France\, 54011 ORGANIZER:stephane.mangin@univ-lorraine.fr SEQUENCE:6 SUMMARY:Assembling Chiral Materials into Tunnel Junctions URL;VALUE=URI:https://events.vtools.ieee.org/m/511765 X-ALT-DESC:Description: <br /><p class="p1"><strong>Assembling Chiral Mater ials into Tunnel Junctions</strong></p>\n<p class="p2">Chiral-induced spin selectivity (CISS) has emerged as a powerful route to generate spin-polar ized</p>\n<p class="p2">currents without the need for magnetic order\, off ering a promising platform for future spintronic</p>\n<p class="p2">applic ations [1\,2]. While conventional spintronic devices rely on a pairs of fe rromagnetic electrodes\,</p>\n<p class="p2">integrating chiral molecular m aterials into tunnel junctions opens new possibilities for designing highl y</p>\n<p class="p2">efficient spin filters and energy-efficient spin&ndas h\;charge conversion architectures. In this talk\, I will present</p>\n<p class="p2">our recent progress on junction devices with <em>lateral &pi\;- extended helical nanographenes</em>\, which exhibit</p>\n<p class="p2">str ong optical activity and remarkably high spin polarization at room tempera ture. By combining these</p>\n<p class="p2">chiral molecular systems with well-established tunnel barrier engineering\, we aim to construct solid-</ p>\n<p class="p2">state junctions capable of realizing spintronic function alities through the CISS effect [3]. We observed</p>\n<p class="p2">a clea r magnetoresistance at room temperature in the tunnel junction devices\, w hich exhibit</p>\n<p class="p2">unidirectional transport properties. This work builds not only on the successful synthesis of the <em>lateral</em></ p>\n<p class="p2">chiral molecules [4] but also on our extensive expertise in tunnel junction investigation\, established</p>\n<p class="p2">through recent studies on asymmetric tunnel junctions based on van der Waals anti ferromagnetic</p>\n<p class="p2">CrSBr (<em>Nature</em> 2024 [5]) or low-r esistivity metal chromium (<em>Nano Lett.</em> 2023 [6]). I will also intr oduce the</p>\n<p class="p2">design strategies for chiral tunnel junctions \, the impact of molecular structure on spin-filtering efficiency\,</p>\n< p class="p2">and the outlook of chiral materials tunnel junction devices. This approach paves the way toward next-</p>\n<p class="p2">generation mol ecular spintronic devices that combine functionality with scalable solid-s tate integration.</p>\n<p class="p2">[1] B. Bloom et al. Chem. Rev. 124(4) \, 2014</p>\n<p class="p2">[2] S. Ham et al. Micromachines 15(4)\, 528\, 2 024</p>\n<p class="p2">[3] S. Yang et al.\, Nat. Rev. Phys. 3\, 328\, 2021 </p>\n<p class="p2">[4] W. Niu et al. Angew. Chem. Int. Ed. 63\, e20231987 4\, 2024</p>\n<p class="p2">[5] Y. Chen et al. Nature 632\, 1045\, 2024</p >\n<p class="p2">[6] C. Fang et al. Nano Lett. 23\, 11485\, 2023</p>\n<p c lass="p2"><strong>Dr. Chi Fang </strong>is currently a postdoctoral resear cher at the Max Planck Institute of</p>\n<p class="p2">Microstructure Phys ics\, Germany. He received his Ph.D. in Condensed Matter Physics</p>\n<p c lass="p2">from the University of Chinese Academy of Sciences (UCAS) in 202 0 and M. S. in</p>\n<p class="p2">Material Engineering from UCAS in 2017. His research focuses on magnetic tunnel</p>\n<p class="p2">junction and sp in transport in antiferromagnets. Dr. Fang has published more than 30</p>\ n<p class="p2">peer-reviewed papers\, which received over 1\,700 citations with an h-index of 20</p>\n<p class="p2">according to Web of Science (WoS ).</p> END:VEVENT END:VCALENDAR