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DTSTAMP:20251101T230825Z
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DTSTART;TZID=Europe/Madrid:20251112T110000
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DESCRIPTION:Electrical manipulation of magnetic moments via spin-orbit torq
 ue\n\nThe discovery of spin-orbit torques (SOT) a decade ago revolutionize
 d\n\nspintronics by providing an efficient means to manipulate magnetic mo
 ments\n\nthrough electrical currents. Current-induced magnetization switch
 ing driven by\n\nSOT offers a promising route toward ultrafast and energy-
 efficient spintronic\n\ndevices for both computing and memory applications
 .\n\nBy employing electrical probes with sub-nanosecond resolution\, we in
 vestigate\n\nthe efficient manipulation of magnetic moments via SOT in con
 ventional\n\nferromagnets [1]\, antiferromagnets [2–5]\, and two-dimensi
 onal van der Waals\n\nmaterials [6]\, and explore their potential in compu
 ting and memory technologies.\n\nRecently\, a fundamentally new direction 
 has emerged in which orbital angular momentum\n\n(OAM) and its associated 
 orbital current can be efficiently utilized to manipulate magnetic\n\nmome
 nts. We further explore and discuss the role of orbital currents and orbit
 al torques for\n\nachieving even more efficient electrical control of magn
 etism.\n\nThese results provide valuable insights and guidance for the fut
 ure design of efficient SOT-based\n\nspintronic devices.\n\n[1] S. Li\, A.
  Du\, et al. Science Bulletin\, 67(7)\, 691-699\, (2022).\n\n[2] D. Zhu\, 
 A. Du\, et al. IEEE International Electron Devices Meeting\, pp. 17-5. (20
 21).\n\n[3] A. Du\, et al. Nature Electronics\, 6(6)\, 425-433\, (2023).\n
 \n[4] A. Du\, et al. Advanced Electronic Materials\, 10(6)\, 2300779\, (20
 24).\n\n[5] Z. Chen\, A. Du\, et al. Under review.\n\n[6] A. Du\, et al. A
 dvanced Materials\, e05190\, (2025).\n\nRoom: 4-A014\, Bldg: Institut Jean
  Lamour \, 5 Allee Guinier\, Nancy\, Lorraine\, France\, 54011
LOCATION:Room: 4-A014\, Bldg: Institut Jean Lamour \, 5 Allee Guinier\, Nan
 cy\, Lorraine\, France\, 54011
ORGANIZER:stephane.mangin@univ-lorraine.fr
SEQUENCE:5
SUMMARY:Electrical manipulation of magnetic moments via spin-orbit torque
URL;VALUE=URI:https://events.vtools.ieee.org/m/511766
X-ALT-DESC:Description: &lt;br /&gt;&lt;p class=&quot;p1&quot;&gt;&lt;strong&gt;Electrical manipulation
  of magnetic moments via spin-orbit torque&lt;/strong&gt;&lt;/p&gt;\n&lt;p class=&quot;p2&quot;&gt;The
  discovery of spin-orbit torques (SOT) a decade ago revolutionized&lt;/p&gt;\n&lt;p
  class=&quot;p2&quot;&gt;spintronics by providing an efficient means to manipulate magn
 etic moments&lt;/p&gt;\n&lt;p class=&quot;p2&quot;&gt;through electrical currents. Current-induc
 ed magnetization switching driven by&lt;/p&gt;\n&lt;p class=&quot;p2&quot;&gt;SOT offers a promi
 sing route toward ultrafast and energy-efficient spintronic&lt;/p&gt;\n&lt;p class=
 &quot;p2&quot;&gt;devices for both computing and memory applications.&lt;/p&gt;\n&lt;p class=&quot;p2
 &quot;&gt;By employing electrical probes with sub-nanosecond resolution\, we inves
 tigate&lt;/p&gt;\n&lt;p class=&quot;p2&quot;&gt;the efficient manipulation of magnetic moments v
 ia SOT in conventional&lt;/p&gt;\n&lt;p class=&quot;p2&quot;&gt;ferromagnets [1]\, antiferromagn
 ets [2&amp;ndash\;5]\, and two-dimensional van der Waals&lt;/p&gt;\n&lt;p class=&quot;p2&quot;&gt;ma
 terials [6]\, and explore their potential in computing and memory technolo
 gies.&lt;/p&gt;\n&lt;p class=&quot;p2&quot;&gt;Recently\, a fundamentally new direction has emer
 ged in which orbital angular momentum&lt;/p&gt;\n&lt;p class=&quot;p2&quot;&gt;(OAM) and its ass
 ociated orbital current can be efficiently utilized to manipulate magnetic
 &lt;/p&gt;\n&lt;p class=&quot;p2&quot;&gt;moments. We further explore and discuss the role of or
 bital currents and orbital torques for&lt;/p&gt;\n&lt;p class=&quot;p2&quot;&gt;achieving even m
 ore efficient electrical control of magnetism.&lt;/p&gt;\n&lt;p class=&quot;p2&quot;&gt;These re
 sults provide valuable insights and guidance for the future design of effi
 cient SOT-based&lt;/p&gt;\n&lt;p class=&quot;p2&quot;&gt;spintronic devices.&lt;/p&gt;\n&lt;p class=&quot;p3&quot;&gt;
 [1] S. Li\, A. Du\, et al. Science Bulletin\, 67(7)\, 691-699\, (2022).&lt;/p
 &gt;\n&lt;p class=&quot;p3&quot;&gt;[2] D. Zhu\, A. Du\, et al. IEEE International Electron D
 evices Meeting\, pp. 17-5. (2021).&lt;/p&gt;\n&lt;p class=&quot;p3&quot;&gt;[3] A. Du\, et al. N
 ature Electronics\, 6(6)\, 425-433\, (2023).&lt;/p&gt;\n&lt;p class=&quot;p3&quot;&gt;[4] A. Du\
 , et al. Advanced Electronic Materials\, 10(6)\, 2300779\, (2024).&lt;/p&gt;\n&lt;p
  class=&quot;p3&quot;&gt;[5] Z. Chen\, A. Du\, et al. Under review.&lt;/p&gt;\n&lt;p class=&quot;p3&quot;&gt;
 [6] A. Du\, et al. Advanced Materials\, e05190\, (2025).&lt;/p&gt;
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