BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/New_York BEGIN:DAYLIGHT DTSTART:20260308T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20251102T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20251113T183109Z UID:8E89AA3C-CA0E-48DF-93B6-8C7871583F78 DTSTART;TZID=America/New_York:20251113T100000 DTEND;TZID=America/New_York:20251113T110000 DESCRIPTION:[]\n\nAbstract:\n\nThe Field Effect Transistor (FET) has been t he cornerstone device of the integrated circuits era. This presentation be gins with an overview of the key milestones in FET evolution and concludes with a discussion of possible device architectures for future technologie s.\n\nThe origin dates back to Lilienfeld’s patent\, filed in 1925\, whi ch was never fabricated due to technological limitations of that time. The first experimental Metal–Oxide–Semiconductor FET (MOSFET) was success fully demonstrated only in 1960. The early MOSFET consisted of Aluminum (a s the gate metal)\, silicon dioxide (as the gate oxide)\, and silicon (as the semiconductor channel).\n\nTo sustain Moore’s Law and mitigate short -channel effects\, continuous innovations in both materials and device str uctures were required to improve electrostatic control between the gate an d the channel. The gate electrode evolved from heavily doped polysilicon t o metals such as TiN and TaN. The gate dielectric shifted from conventiona l SiO₂ to high-κ materials such as SiON\, HfSiON\, and HfO₂\, signifi cantly reducing gate leakage currents. Likewise\, the silicon channel was engineered through strain techniques (uniaxial and biaxial strained Si) an d the incorporation of alternative materials such as SiGe\, Ge\, and InGaA s to enhance carrier mobility.\n\nStructural innovations have also been fu ndamental. The MOSFET advanced from bulk devices to Silicon-on-Insulator ( SOI) architectures\, and later from single-gate designs to multi-gate devi ces such as FinFETs\, nanowires\, nanosheets\, and forksheets\, enabling s uperior electrostatic coupling. Beyond conventional MOSFETs\, novel device s exploiting different conduction mechanisms have been explored. For insta nce\, Tunnel FETs (TFETs) leverage band-to-band tunneling instead of drift -diffusion\, offering advantages in subthreshold operation and energy effi ciency.\n\nFinally\, this presentation will also address the analog behavi or of these emerging devices\, highlighting their potential impact on futu re electronic systems.\n\nSpeaker(s): João\, \n\nRoom: 260\, Bldg: Dreese Lab\, Department of Electrical and Computer Engineering\, 2015 Neil Avenu e\, Columbus\, Ohio\, United States\, 43210\, Virtual: https://events.vtoo ls.ieee.org/m/512837 LOCATION:Room: 260\, Bldg: Dreese Lab\, Department of Electrical and Comput er Engineering\, 2015 Neil Avenue\, Columbus\, Ohio\, United States\, 4321 0\, Virtual: https://events.vtools.ieee.org/m/512837 ORGANIZER:pberger@ieee.org SEQUENCE:24 SUMMARY:IEEE EDS/PHO Columbus DL Speaker: FET100 - 100 years of Field Effec t Transistors: From MOSFET to CFET Devices (Prof. Dr. João Antonio Martin o\, University of São Paulo\, Brazil) URL;VALUE=URI:https://events.vtools.ieee.org/m/512837 X-ALT-DESC:Description: <br /><p class="MsoNormal"><img src="https://events .vtools.ieee.org/vtools_ui/media/display/f47ff4ce-1e58-4768-8c03-bc28e18f5 123" alt="" width="1000" height="1294"></p>\n<p class="MsoNormal"><strong> <span style="font-size: 12.0pt\; color: black\;">Abstract</span></strong>< span style="font-size: 12.0pt\; color: black\;">: </span></p>\n<p class="M soNormal" style="mso-pagination: widow-orphan\; text-align: justify\; text -justify: newspaper\; text-kashida-space: 50%\; margin-bottom: 0pt\;"><spa n lang="en-US" style="font-size: 11.0pt\; font-family: Calibri\; mso-armen ian-font-family: Calibri\; mso-hebrew-font-family: Calibri\; mso-arabic-fo nt-family: Calibri\; mso-thai-font-family: Calibri\; color: black\; mso-st yle-textfill-type: solid\; mso-style-textfill-fill-color: black\; mso-styl e-textfill-fill-alpha: 100%\; language: en-US\; mso-ansi-language: en-US\; mso-ligatures: none\;">The Field Effect Transistor (FET) has been the cor nerstone device of the integrated circuits era. This presentation begins w ith an overview of the key milestones in FET evolution and concludes with a discussion of possible device architectures for future technologies. </s pan></p>\n<p class="MsoNormal" style="mso-pagination: widow-orphan\; text- align: justify\; text-justify: newspaper\; text-kashida-space: 50%\; margi n-bottom: 0pt\;"><span lang="en-US" style="font-size: 11.0pt\; font-family : Calibri\; mso-armenian-font-family: Calibri\; mso-hebrew-font-family: Ca libri\; mso-arabic-font-family: Calibri\; mso-thai-font-family: Calibri\; color: black\; mso-style-textfill-type: solid\; mso-style-textfill-fill-co lor: black\; mso-style-textfill-fill-alpha: 100%\; language: en-US\; mso-a nsi-language: en-US\; mso-ligatures: none\;"><span style="mso-tab-count: 1 \;">&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\; &nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\; </span>The origin dates back to Lilienfeld&rsquo\;s patent\, filed in 1925\, which was never fabricated d ue to technological limitations of that time. The first experimental Metal &ndash\;Oxide&ndash\;Semiconductor FET (MOSFET) was successfully demonstra ted only in 1960. The early MOSFET consisted of Aluminum (as the gate meta l)\, silicon dioxide (as the gate oxide)\, and silicon (as the semiconduct or channel). </span></p>\n<p class="MsoNormal" style="mso-pagination: wido w-orphan\; text-align: justify\; text-justify: newspaper\; text-kashida-sp ace: 50%\; margin-bottom: 0pt\;"><span lang="en-US" style="font-size: 11.0 pt\; font-family: Calibri\; mso-armenian-font-family: Calibri\; mso-hebrew -font-family: Calibri\; mso-arabic-font-family: Calibri\; mso-thai-font-fa mily: Calibri\; color: black\; mso-style-textfill-type: solid\; mso-style- textfill-fill-color: black\; mso-style-textfill-fill-alpha: 100%\; languag e: en-US\; mso-ansi-language: en-US\; mso-ligatures: none\;"><span style=" mso-tab-count: 1\;"> </span>To sustain Moore&rsquo\;s Law and mitigate sho rt-channel effects\, continuous innovations in both materials and device s tructures were required to improve electrostatic control between the gate and the channel. The gate electrode evolved from heavily doped polysilicon to metals such as TiN and TaN. The gate dielectric shifted from conventio nal SiO₂ to high-</span><span lang="el" style="font-size: 11.0pt\; font- family: Calibri\; mso-armenian-font-family: Calibri\; mso-hebrew-font-fami ly: Calibri\; mso-arabic-font-family: Calibri\; mso-thai-font-family: Cali bri\; mso-georgian-font-family: Calibri\; mso-eudc-font-family: Calibri\; color: black\; mso-style-textfill-type: solid\; mso-style-textfill-fill-co lor: black\; mso-style-textfill-fill-alpha: 100%\; language: el\; mso-ansi -language: el\; mso-ligatures: none\;">&kappa\;</span><span lang="en-US" s tyle="font-size: 11.0pt\; font-family: Calibri\; mso-armenian-font-family: Calibri\; mso-hebrew-font-family: Calibri\; mso-arabic-font-family: Calib ri\; mso-thai-font-family: Calibri\; color: black\; mso-style-textfill-typ e: solid\; mso-style-textfill-fill-color: black\; mso-style-textfill-fill- alpha: 100%\; language: en-US\; mso-ansi-language: en-US\; mso-ligatures: none\;"> materials such as SiON\, HfSiON\, and HfO₂\, significantly redu cing gate leakage currents. Likewise\, the silicon channel was engineered through strain techniques (uniaxial and biaxial strained Si) and the incor poration of alternative materials such as SiGe\, Ge\, and InGaAs to enhanc e carrier mobility. </span></p>\n<p class="MsoNormal" style="mso-paginatio n: widow-orphan\; text-align: justify\; text-justify: newspaper\; text-kas hida-space: 50%\; margin-bottom: 0pt\;"><span lang="en-US" style="font-siz e: 11.0pt\; font-family: Calibri\; mso-armenian-font-family: Calibri\; mso -hebrew-font-family: Calibri\; mso-arabic-font-family: Calibri\; mso-thai- font-family: Calibri\; color: black\; mso-style-textfill-type: solid\; mso -style-textfill-fill-color: black\; mso-style-textfill-fill-alpha: 100%\; language: en-US\; mso-ansi-language: en-US\; mso-ligatures: none\;"><span style="mso-tab-count: 1\;"> </span>Structural innovations have also been f undamental. The MOSFET advanced from bulk devices to Silicon-on-Insulator (SOI) architectures\, and later from single-gate designs to multi-gate dev ices such as FinFETs\, nanowires\, nanosheets\, and forksheets\, enabling superior electrostatic coupling. Beyond conventional MOSFETs\, novel devic es exploiting different conduction mechanisms have been explored. For inst ance\, Tunnel FETs (TFETs) leverage band-to-band tunneling instead of drif t-diffusion\, offering advantages in subthreshold operation and energy eff iciency. </span></p>\n<p class="MsoNormal" style="mso-pagination: widow-or phan\; text-align: justify\; text-justify: newspaper\; text-kashida-space: 50%\; margin-bottom: 0pt\;"><span lang="en-US" style="font-size: 11.0pt\; font-family: Calibri\; mso-armenian-font-family: Calibri\; mso-hebrew-fon t-family: Calibri\; mso-arabic-font-family: Calibri\; mso-thai-font-family : Calibri\; color: black\; mso-style-textfill-type: solid\; mso-style-text fill-fill-color: black\; mso-style-textfill-fill-alpha: 100%\; language: e n-US\; mso-ansi-language: en-US\; mso-ligatures: none\;"><span style="mso- tab-count: 1\;"> </span>Finally\, this presentation will also address the analog behavior of these emerging devices\, highlighting their potential i mpact on future electronic systems.&nbsp\;</span></p> END:VEVENT END:VCALENDAR