BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Europe/Bratislava BEGIN:DAYLIGHT DTSTART:20260329T030000 TZOFFSETFROM:+0100 TZOFFSETTO:+0200 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=3 TZNAME:CEST END:DAYLIGHT BEGIN:STANDARD DTSTART:20251026T020000 TZOFFSETFROM:+0200 TZOFFSETTO:+0100 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=10 TZNAME:CET END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20251208T074939Z UID:1B539D4A-7E70-40A4-B81D-6FE4784E9C71 DTSTART;TZID=Europe/Bratislava:20251124T090000 DTEND;TZID=Europe/Bratislava:20251124T123000 DESCRIPTION:Invited Lecture: Intelligent Memory Devices and Systems in Sust ainable Computing\n\nSpeaker: Prof. Tuo-Hung (Alex) Hou\nDepartment of Ele ctrical Engineering and Institute of Electronics\, National Yang Ming Chia o Tung University (NYCU)\, Taiwan\n\nAbstract\n\nMemory technology is not only a cornerstone of today’s semiconductor industry but also a driving force behind innovations in big data processing\, AI acceleration\, neurom orphic computing\, hardware security\, and combinatorial optimization. In the emerging era of intelligent memory\, memory-centric architectures prom ise unprecedented parallelism\, energy efficiency\, and density beyond con ventional von Neumann systems\, paving the way for sustainable computing o f the future.\n\nIn this lecture\, Prof. Hou will present the latest devel opments in ferroelectric and magnetic memories at NYCU\, including BEOL-co mpatible ferroelectric transistors\, ferroelectric tunnel junctions\, STT- MRAM\, and SOT-MRAM. He will also highlight demonstrations of highly energ y-efficient in-memory computing\, in-memory annealing\, and in-memory sens ing enabled by these novel memory devices.\n\nAbout the Speaker\n\nProf. T uo-Hung (Alex) Hou received his Ph.D. in Electrical and Computer Engineeri ng from Cornell University in 2008. He previously worked at Taiwan Semicon ductor Manufacturing Company (TSMC) and is now a Chair Professor at NYCU. He also serves as the Program Director of the Angstrom Semiconductor Initi ative\, one of Taiwan’s largest national programs for advanced semicondu ctors\, and has served as Director General of the Taiwan Semiconductor Res earch Institute (TSRI) and Associate Vice President for R&D at NYCU.\n\nHi s research interests include emerging non-volatile memories\, electronic s ynaptic devices and neuromorphic computing systems\, and the heterogeneous integration of silicon electronics with low-dimensional nanomaterials. Pr of. Hou is an IEEE EDS Distinguished Lecturer and recipient of numerous aw ards\, including the CIE and MOST Outstanding Research Awards.\n\nCo-spons ored by: Elektrotechnický Ústav SAV\n\nSpeaker(s): Tuo-Hung (Alex)\, \n \nRoom: 101\, Bldg: Slovak Academy of Sciences\, Institute of Electrical E ngineering\, Dúbravská cesta 9\, Bratislava\, Slovakia\, Slovakia LOCATION:Room: 101\, Bldg: Slovak Academy of Sciences\, Institute of Electr ical Engineering\, Dúbravská cesta 9\, Bratislava\, Slovakia\, Slovakia ORGANIZER:boris.hudec@savba.sk SEQUENCE:46 SUMMARY:Invited Lecture: Intelligent Memory Devices and Systems in Sustaina ble Computing URL;VALUE=URI:https://events.vtools.ieee.org/m/512971 X-ALT-DESC:Description: <br /><p>Invited Lecture: Intelligent Memory Device s and Systems in Sustainable Computing</p>\n<p>Speaker: Prof. Tuo-Hung (Al ex) Hou<br>Department of Electrical Engineering and Institute of Electroni cs\, National Yang Ming Chiao Tung University (NYCU)\, Taiwan</p>\n<p>Abst ract</p>\n<p>Memory technology is not only a cornerstone of today&rsquo\;s semiconductor industry but also a driving force behind innovations in big data processing\, AI acceleration\, neuromorphic computing\, hardware sec urity\, and combinatorial optimization. In the emerging era of intelligent memory\, memory-centric architectures promise unprecedented parallelism\, energy efficiency\, and density beyond conventional von Neumann systems\, paving the way for sustainable computing of the future.</p>\n<p>In this l ecture\, Prof. Hou will present the latest developments in ferroelectric a nd magnetic memories at NYCU\, including BEOL-compatible ferroelectric tra nsistors\, ferroelectric tunnel junctions\, STT-MRAM\, and SOT-MRAM. He wi ll also highlight demonstrations of highly energy-efficient in-memory comp uting\, in-memory annealing\, and in-memory sensing enabled by these novel memory devices.</p>\n<p>About the Speaker</p>\n<p>Prof. Tuo-Hung (Alex) H ou received his Ph.D. in Electrical and Computer Engineering from Cornell University in 2008. He previously worked at Taiwan Semiconductor Manufactu ring Company (TSMC) and is now a Chair Professor at NYCU. He also serves a s the Program Director of the Angstrom Semiconductor Initiative\, one of T aiwan&rsquo\;s largest national programs for advanced semiconductors\, and has served as Director General of the Taiwan Semiconductor Research Insti tute (TSRI) and Associate Vice President for R&amp\;D at NYCU.</p>\n<p>His research interests include emerging non-volatile memories\, electronic sy naptic devices and neuromorphic computing systems\, and the heterogeneous integration of silicon electronics with low-dimensional nanomaterials. Pro f. Hou is an IEEE EDS Distinguished Lecturer and recipient of numerous awa rds\, including the CIE and MOST Outstanding Research Awards.</p> END:VEVENT END:VCALENDAR