BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/New_York BEGIN:DAYLIGHT DTSTART:20260308T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20251102T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20251123T184209Z UID:0E7206C9-9346-407A-B357-8FA7266B3045 DTSTART;TZID=America/New_York:20251119T153000 DTEND;TZID=America/New_York:20251119T163000 DESCRIPTION:Presenter: Dr. Ernest Y. Wu IEEE Fellow (formerly with IBM Rese arch Division)\n\nAbstract:\n\nIn this talk\, we will give an overview of dielectric breakdown (BD) research with focus on industry’s needs and pu rsuit of fundamental understanding in this growing field. After a brief re view of basic elements of dielectric properties\, we will discuss critical reliability aspects of dielectrics for their sustainable lifetime in a wi de range of applications. Various electrical transport characteristics and physical signatures of dielectric failures will be reviewed for a wide ra nge of dielectric thickness from 35nm down to ∼ 1nm. We will describe di fferent failure modes\, so-called soft and hard BD modes as well as progre ssive BD modes which are relevant for accurate reliability forecast or pre diction to maintain the industry scaling roadmap. We will provide an overv iew of several acceleration models used for reliability forecasts or lifet ime projection. Besides attempts to form physics-based framework of dielec tric breakdown\, we will unravel statistical techniques and modeling appro aches which are indispensable tools to characterize dielectric breakdown p henomena and establish our confidence in reliability forecast. We will hig hlight how dielectric BD\, a failure mechanism for most applications\, is employed as a fabrication tool to form a filament or filaments in resistiv e random-access memory (RRAM) devices for neuromorphic computing. Finally\ , we will address several fundamental roadblocks which will be the key are as for future research of dielectric breakdown.\n\nSpeaker(s): Ernest\, \n \nRoom: L111\, Bldg: Lafayette Hall\, 94 University Place\, Burlington\, V ermont\, United States\, 05405 LOCATION:Room: L111\, Bldg: Lafayette Hall\, 94 University Place\, Burlingt on\, Vermont\, United States\, 05405 ORGANIZER:Jackson.Anderson@uvm.edu SEQUENCE:29 SUMMARY:The Past\, Current\, and Future of Dielectric [Breakdown] Research URL;VALUE=URI:https://events.vtools.ieee.org/m/513592 X-ALT-DESC:Description: <br /><p><span style="font-family: Aptos\, Aptos_Em beddedFont\, Aptos_MSFontService\, Calibri\, Helvetica\, sans-serif\; font -size: 11pt\; color: rgb(0\, 0\, 0)\;" data-olk-copy-source="MessageBody"> Presenter:&nbsp\; Dr. Ernest Y. Wu&nbsp\; IEEE Fellow&nbsp\; (formerly wit h IBM Research Division)</span></p>\n<p><span style="font-family: Aptos\, Aptos_EmbeddedFont\, Aptos_MSFontService\, Calibri\, Helvetica\, sans-seri f\; font-size: 11pt\; color: rgb(0\, 0\, 0)\;" data-olk-copy-source="Messa geBody">Abstract:<br><br>In this talk\, we will give an overview of dielec tric breakdown (BD) research with focus on industry&rsquo\;s needs and pur suit of fundamental understanding in this growing field. After a brief rev iew of basic elements of dielectric properties\, we will discuss critical reliability aspects of dielectrics for their sustainable lifetime in a wid e range of applications. Various electrical transport characteristics and physical signatures of dielectric failures will be reviewed for a wide ran ge of dielectric thickness from 35nm down to &sim\; 1nm. We will describe different failure modes\, so-called soft and hard BD modes as well as prog ressive BD modes which are relevant for accurate reliability forecast or p rediction to maintain the industry scaling roadmap. We will provide an ove rview of several acceleration models used for reliability forecasts or lif etime projection. Besides attempts to form physics-based framework of diel ectric breakdown\, we will unravel statistical techniques and modeling app roaches which are indispensable tools to characterize dielectric breakdown phenomena and establish our confidence in reliability forecast. We will h ighlight how dielectric BD\, a failure mechanism for most applications\, i s employed as a fabrication tool to form a filament or filaments in resist ive random-access memory (RRAM) devices for neuromorphic computing. Finall y\, we will address several fundamental roadblocks which will be the key a reas for future research of dielectric breakdown.<br><br></span></p>\n<div style="border: 0px\; font-style: normal\; font-variant-ligatures: normal\ ; font-variant-caps: normal\; font-variant-numeric: inherit\; font-variant -east-asian: inherit\; font-variant-alternates: inherit\; font-variant-pos ition: inherit\; font-variant-emoji: inherit\; font-weight: 400\; font-str etch: inherit\; font-size: 11pt\; line-height: inherit\; font-family: Apto s\, Aptos_EmbeddedFont\, Aptos_MSFontService\, Calibri\, Helvetica\, sans- serif\; font-optical-sizing: inherit\; font-size-adjust: inherit\; font-ke rning: inherit\; font-feature-settings: inherit\; font-variation-settings: inherit\; margin: 0px\; padding: 0px\; vertical-align: baseline\; color: rgb(0\, 0\, 0) !important\; letter-spacing: normal\; orphans: 2\; text-ali gn: start\; text-indent: 0px\; text-transform: none\; widows: 2\; word-spa cing: 0px\; -webkit-text-stroke-width: 0px\; white-space: normal\; backgro und-color: rgb(255\, 255\, 255)\; text-decoration-thickness: initial\; tex t-decoration-style: initial\; text-decoration-color: initial\;" data-ogsc= "rgb(0\, 0\, 0)">&nbsp\;</div>\n<p><span style="font-family: Aptos\, Aptos _EmbeddedFont\, Aptos_MSFontService\, Calibri\, Helvetica\, sans-serif\; f ont-size: 11pt\; color: rgb(0\, 0\, 0)\;" data-olk-copy-source="MessageBod y">&nbsp\;</span></p> END:VEVENT END:VCALENDAR