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DTSTAMP:20251206T154353Z
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DTSTART;TZID=America/Los_Angeles:20251204T160000
DTEND;TZID=America/Los_Angeles:20251204T183000
DESCRIPTION:TALK #1 by Vanessa Chen\nTITLE\nAI-Enhanced RF/Mixed-Signal Cir
 cuits for Reliable Operations\n\nABSTRACT\nAI-driven design and optimizati
 on are revolutionizing RF and mixed-signal circuits for operation in extre
 me environments\, including high radiation and wide temperature ranges. Th
 is talk explores the use of reinforcement learning (RL) and generative mod
 els to improve circuit robustness and adaptability. RL-based self-healing 
 techniques leverage embedded electromagnetic sensors for real-time monitor
 ing and dynamic fault recovery while generative models accelerate design s
 pace exploration\, enabling resilient and efficient circuit topologies. Th
 e presentation will highlight AI-enhanced designs such as adaptive power a
 mplifiers\, PMICs\, and multispectral sensors that enhance performance and
  reliability in harsh environments.\n\nBIOGRAPHY\nVanessa Chen received he
 r Ph.D. in Electrical and Computer Engineering from Carnegie Mellon Univer
 sity in 2013\, where she worked on energy-efficient\, ultra-high-speed ADC
 s with real-time calibration and interned at IBM T. J. Watson Research Cen
 ter. She previously held circuit design roles at Qualcomm in San Diego and
  Realtek in Taiwan\, focusing on self-healing RF and mixed-signal circuits
 . Her research explores AI-enhanced circuits and systems\, including intel
 ligent sensory interfaces\, RF/mixed-signal hardware security\, and ubiqui
 tous sensing and computing. Dr. Chen is a recipient of the NSF CAREER Awar
 d\, the CMU College of Engineering Dean’s Early Career Fellowship\, and 
 the IBM PhD Fellowship. She has served on program committees for ISSCC\, V
 LSI\, CICC\, A-SSCC\, and DAC\, as an Associate Editor for several IEEE jo
 urnals\, and is currently an IEEE SSCS Distinguished Lecturer for 2025–2
 026.\n\nTALK #2 by Tim Hollis\n\nTITLE\nMemory Interfaces – Past\, Prese
 nt and Future\n\nABSTRACT\n\nDRAM standards have evolved tremendously over
  the last two-and-a-half decades\, leading to diversification not only in 
 the architecture of the memory array but also in that of the off-chip inte
 rface. Application-specific signaling channels have influenced the transce
 iver design nearly as much as system power and bandwidth requirements have
 . The influence of the multidrop server channel\, along with a broad range
  of target environments\, has led the DDR branch of JEDEC DRAMs to incorpo
 rate multi tap Decision Feedback Equalization to maximize flexibility\, wh
 ile shrinking supply voltages to facilitate energy reduction have led Low-
 Power DDR (LPDDR) to completely rethink the output driver structure. In pa
 rallel\, Graphics DDR (GDDR) has reached speeds requiring nearly equal car
 e of the external channel and the chip itself. The adoption of multi-level
  signaling in GDDR6x and GDDR7 to relax on-chip frequency requirements has
  only heightened the need for more rigorous co-design of transceiver\, pac
 kage and system characteristics. And\, of course\, the integration of sili
 con interposers to support High Bandwidth Memory (HBM) has driven a paradi
 gm shift in memory interface design. With all of these adaptations\, and m
 any others not captured here\, the splintering DRAM family continues to pu
 sh the boundaries of single-ended signaling into the future. This presenta
 tion briefly explores what has driven the diversification in DRAM signalin
 g schemes over the decades\, will discuss the motivation behind present em
 bodiments\, and will project into the future to where the DRAM interface i
 s likely headed (e.g.\, features and functions necessary for continued ene
 rgy-efficient bandwidth scaling).\n\nBIOGRAPHY\n\nTim Hollis received the 
 Ph.D. degree in electrical engineering from Brigham Young University\, Pro
 vo\, UT\, USA\, in 2007. In 2006\, he joined the Advanced Architecture Gro
 up at Micron Technology in Boise\, Idaho\, USA where he contributed to sev
 eral pathfinding activities including the first-generation Hybrid Memory C
 ube. From 2012 to 2014\, he worked as a chipset architect at Qualcomm in S
 an Diego\, CA\, USA. He returned to Micron in 2014\, where he currently le
 ads the Interface Pathfinding Group as a Micron Fellow. He has published 1
 8 articles in journals\, conference proceedings\, and technical magazines\
 , and holds 274 issued U.S. and international patents. Dr. Hollis served a
 s a member of the IEEE Workshop on Microelectronics and Electron Devices O
 rganizing Committee from 2010-2024\, including the General Chair in 2013. 
 He has served on other IEEE conference committees as well as DesignCon’s
  Technical Program Committee from 2013 to 2015. From 2017 to 2020 he serve
 d as the Technology Editor for the IEEE Solid-State Circuits Magazine and 
 as a Guest Editor for memory- and interface-related special issues in 2016
  and 2019\, respectively.\n\nSpeaker(s): Dr. Vanessa Chen\, Dr. Tim Hollis
 \n\nBldg: Qualcomm Q Auditorium\, 6455 Lusk Blvd\, San Diego\, CA 92121\, 
 San Diego\, California\, United States\, 92130\, Virtual: https://events.v
 tools.ieee.org/m/516118
LOCATION:Bldg: Qualcomm Q Auditorium\, 6455 Lusk Blvd\, San Diego\, CA 9212
 1\, San Diego\, California\, United States\, 92130\, Virtual: https://even
 ts.vtools.ieee.org/m/516118
ORGANIZER:jfshi@ieee.org
SEQUENCE:12
SUMMARY:IEEE APS/CASS/EDS/MTTS/SSCS Double-Feature DL Seminars\, by Vanessa
  Chen (Carnegie Mellon Univ.) &amp; Tim Hollis (Micron)\, Dec. 4 @ 4pm PST
URL;VALUE=URI:https://events.vtools.ieee.org/m/516118
X-ALT-DESC:Description: &lt;br /&gt;&lt;div&gt;\n&lt;div&gt;\n&lt;div&gt;&lt;strong&gt;TALK #1 by Vanessa
  Chen&lt;/strong&gt;&lt;/div&gt;\n&lt;div&gt;&amp;nbsp\;&lt;/div&gt;\nTITLE&lt;/div&gt;\n&lt;/div&gt;\n&lt;div&gt;AI-Enh
 anced RF/Mixed-Signal Circuits for Reliable Operations&lt;/div&gt;\n&lt;div&gt;&amp;nbsp\;
 &lt;/div&gt;\n&lt;div&gt;ABSTRACT&lt;/div&gt;\n&lt;div&gt;AI-driven design and optimization are re
 volutionizing RF and mixed-signal circuits for operation in extreme enviro
 nments\, including high radiation and wide temperature ranges. This talk e
 xplores the use of reinforcement learning (RL) and generative models to im
 prove circuit robustness and adaptability. RL-based self-healing technique
 s leverage embedded electromagnetic sensors for real-time monitoring and d
 ynamic fault recovery while generative models accelerate design space expl
 oration\, enabling resilient and efficient circuit topologies. The present
 ation will highlight AI-enhanced designs such as adaptive power amplifiers
 \, PMICs\, and multispectral sensors that enhance performance and reliabil
 ity in harsh environments.&lt;/div&gt;\n&lt;div&gt;&amp;nbsp\;&lt;/div&gt;\n&lt;div&gt;BIOGRAPHY&lt;/div&gt;
 \n&lt;div&gt;Vanessa Chen received her Ph.D. in Electrical and Computer Engineer
 ing from Carnegie Mellon University in 2013\, where she worked on energy-e
 fficient\, ultra-high-speed ADCs with real-time calibration and interned a
 t IBM T. J. Watson Research Center. She previously held circuit design rol
 es at Qualcomm in San Diego and Realtek in Taiwan\, focusing on self-heali
 ng RF and mixed-signal circuits. Her research explores AI-enhanced circuit
 s and systems\, including intelligent sensory interfaces\, RF/mixed-signal
  hardware security\, and ubiquitous sensing and computing. Dr. Chen is a r
 ecipient of the NSF CAREER Award\, the CMU College of Engineering Dean&amp;rsq
 uo\;s Early Career Fellowship\, and the IBM PhD Fellowship. She has served
  on program committees for ISSCC\, VLSI\, CICC\, A-SSCC\, and DAC\, as an 
 Associate Editor for several IEEE journals\, and is currently an IEEE SSCS
  Distinguished Lecturer for 2025&amp;ndash\;2026.&lt;/div&gt;\n&lt;div&gt;&amp;nbsp\;&lt;/div&gt;\n&lt;
 div&gt;&lt;strong&gt;TALK #2 by Tim Hollis&lt;/strong&gt;&lt;/div&gt;\n&lt;div&gt;&amp;nbsp\;&lt;/div&gt;\n&lt;div
 &gt;TITLE&lt;/div&gt;\n&lt;div&gt;Memory Interfaces &amp;ndash\; Past\, Present and Future&lt;/d
 iv&gt;\n&lt;div&gt;&amp;nbsp\;&lt;/div&gt;\n&lt;div&gt;ABSTRACT&lt;/div&gt;\n&lt;div&gt;\n&lt;p class=&quot;MsoNormal&quot;&gt;
 DRAM standards have evolved tremendously over the last two-and-a-half deca
 des\, leading to diversification not only in the architecture of the memor
 y array but also in that of the off-chip interface. Application-specific s
 ignaling channels have influenced the transceiver design nearly as much as
  system power and bandwidth requirements have. The influence of the multid
 rop server channel\, along with a broad range of target environments\, has
  led the DDR branch of JEDEC DRAMs to incorporate multi tap Decision Feedb
 ack Equalization to maximize flexibility\, while shrinking supply voltages
  to facilitate energy reduction have led Low-Power DDR (LPDDR) to complete
 ly rethink the output driver structure. In parallel\, Graphics DDR (GDDR) 
 has reached speeds requiring nearly equal care of the external channel and
  the chip itself. The adoption of multi-level signaling in GDDR6x and GDDR
 7 to relax on-chip frequency requirements has only heightened the need for
  more rigorous co-design of transceiver\, package and system characteristi
 cs. And\, of course\, the integration of silicon interposers to support Hi
 gh Bandwidth Memory (HBM) has driven a paradigm shift in memory interface 
 design. With all of these adaptations\, and many others not captured here\
 , the splintering DRAM family continues to push the boundaries of single-e
 nded signaling into the future.&amp;nbsp\;This presentation briefly explores w
 hat has driven the diversification in DRAM signaling schemes over the deca
 des\, will discuss the motivation behind present embodiments\, and will pr
 oject into the future to where the DRAM interface is likely headed (e.g.\,
  features and functions necessary for continued energy-efficient bandwidth
  scaling).&lt;/p&gt;\n&lt;/div&gt;\n&lt;div&gt;&amp;nbsp\;&lt;/div&gt;\n&lt;div&gt;BIOGRAPHY&lt;/div&gt;\n&lt;div&gt;\n&lt;
 p class=&quot;MsoNormal&quot;&gt;Tim Hollis received the Ph.D. degree in electrical eng
 ineering from Brigham Young University\, Provo\, UT\, USA\, in 2007. &amp;nbsp
 \;In 2006\, he joined the Advanced Architecture Group at Micron Technology
  in Boise\, Idaho\, USA where he contributed to several pathfinding activi
 ties including the first-generation Hybrid Memory Cube. From 2012 to 2014\
 , he worked as a chipset architect at Qualcomm in San Diego\, CA\, USA. He
  returned to Micron in 2014\, where he currently leads the Interface Pathf
 inding Group as a Micron Fellow. He has published 18 articles in journals\
 , conference proceedings\, and technical magazines\, and holds 274 issued 
 U.S. and international patents. Dr. Hollis served as a member of the IEEE 
 Workshop on Microelectronics and Electron Devices Organizing Committee fro
 m 2010-2024\, including the General Chair in 2013. He has served on other 
 IEEE conference committees as well as DesignCon&amp;rsquo\;s Technical Program
  Committee from 2013 to 2015. From 2017 to 2020 he served as the Technolog
 y Editor for the IEEE Solid-State Circuits Magazine and as a Guest Editor 
 for memory- and interface-related special issues in 2016 and 2019\, respec
 tively.&lt;/p&gt;\n&lt;/div&gt;
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