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PRODID:IEEE vTools.Events//EN
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BEGIN:VTIMEZONE
TZID:Europe/Stockholm
BEGIN:DAYLIGHT
DTSTART:20260329T030000
TZOFFSETFROM:+0100
TZOFFSETTO:+0200
RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=3
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DTSTART:20251026T020000
TZOFFSETFROM:+0200
TZOFFSETTO:+0100
RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=10
TZNAME:CET
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTAMP:20251211T160908Z
UID:0199D350-E3EF-4D31-9B0E-BFB56ACD75B2
DTSTART;TZID=Europe/Stockholm:20251211T160000
DTEND;TZID=Europe/Stockholm:20251211T170000
DESCRIPTION:Lilienfeld instead of Lucia\n\nIEEE Electron Devices Sweden inv
 ite you to a celebration of FET 100 years https://eds.ieee.org/about-eds/f
 et100-year-celebration\n\n4 pm - 5 pm\n- Professor Mikael Östling KTH int
 roduces the seminar\n- Professor Per-Erik Hellström KTH teaches the self-
 alignment process that allows a billion transistors or more\, followed by 
 a description of the KTH SOI process developed in the KTH clean room in Ki
 sta with features like high temperature operation and transparent electron
 ics\n- Professor Mikael Östling describes the 3D integration process deve
 loped in the same clean room\, and motivates the present focus on high vol
 tage SiC MOSFETs\, and then rounds off\n\n5 pm - late\nWe visit the studen
 t pub hosted by QMISK in Electrum\n\nSpeaker(s): Mikael Östling\, Per-Eri
 k Hellström\n\nBldg: Electrum\, Semiconductor Arena\, Kistagången 16\, K
 ista\, Stockholms lan\, Sweden\, 16440
LOCATION:Bldg: Electrum\, Semiconductor Arena\, Kistagången 16\, Kista\, S
 tockholms lan\, Sweden\, 16440
ORGANIZER:bellman@kth.se
SEQUENCE:13
SUMMARY:Celebration of the Field-Effect Transistor 100 years
URL;VALUE=URI:https://events.vtools.ieee.org/m/519996
X-ALT-DESC:Description: &lt;br /&gt;&lt;p class=&quot;MsoNormal&quot;&gt;&lt;span style=&quot;font-size: 
 12.0pt\; font-family: &#39;Arial&#39;\,sans-serif\; mso-ascii-theme-font: major-la
 tin\; mso-hansi-theme-font: major-latin\; mso-bidi-theme-font: major-latin
 \;&quot;&gt;Lilienfeld instead of Lucia&lt;/span&gt;&lt;/p&gt;\n&lt;p class=&quot;MsoNormal&quot;&gt;&lt;span sty
 le=&quot;font-size: 12.0pt\; font-family: &#39;Arial&#39;\,sans-serif\; mso-ascii-theme
 -font: major-latin\; mso-hansi-theme-font: major-latin\; mso-bidi-theme-fo
 nt: major-latin\;&quot;&gt;IEEE Electron Devices Sweden invite you to a celebratio
 n of FET 100 years &lt;a href=&quot;https://eds.ieee.org/about-eds/fet100-year-cel
 ebration&quot; target=&quot;_blank&quot; rel=&quot;noopener&quot;&gt;https://eds.ieee.org/about-eds/fe
 t100-year-celebration&lt;/a&gt;&lt;br&gt;&lt;br&gt;4 pm - 5 pm&lt;br&gt;- Professor Mikael &amp;Ouml\;
 stling KTH introduces the seminar&lt;br&gt;- Professor Per-Erik Hellstr&amp;ouml\;m 
 KTH teaches the self-alignment process that allows a billion transistors o
 r more\, followed by a description of the KTH SOI process developed in the
  KTH clean room in Kista with features like high temperature operation and
 &amp;nbsp\; transparent electronics&lt;br&gt;- Professor Mikael &amp;Ouml\;stling descri
 bes the 3D integration process developed in the same clean room\, and moti
 vates the present focus on high voltage SiC MOSFETs\, and then rounds off&lt;
 br&gt;&lt;br&gt;5 pm - late&lt;br&gt;We visit the student pub hosted by QMISK in Electrum
 &lt;/span&gt;&lt;/p&gt;
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