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DTSTART;TZID=America/Los_Angeles:20251204T171500
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DESCRIPTION:ABSTRACT\n\nDRAM standards have evolved tremendously over the l
 ast two-and-a-half decades\, leading to diversification not only in the ar
 chitecture of the memory array but also in that of the off-chip interface.
  Application-specific signaling channels have influenced the transceiver d
 esign nearly as much as system power and bandwidth requirements have. The 
 influence of the multidrop server channel\, along with a broad range of ta
 rget environments\, has led the DDR branch of JEDEC DRAMs to incorporate m
 ulti tap Decision Feedback Equalization to maximize flexibility\, while sh
 rinking supply voltages to facilitate energy reduction have led Low-Power 
 DDR (LPDDR) to completely rethink the output driver structure. In parallel
 \, Graphics DDR (GDDR) has reached speeds requiring nearly equal care of t
 he external channel and the chip itself. The adoption of multi-level signa
 ling in GDDR6x and GDDR7 to relax on-chip frequency requirements has only 
 heightened the need for more rigorous co-design of transceiver\, package a
 nd system characteristics. And\, of course\, the integration of silicon in
 terposers to support High Bandwidth Memory (HBM) has driven a paradigm shi
 ft in memory interface design. With all of these adaptations\, and many ot
 hers not captured here\, the splintering DRAM family continues to push the
  boundaries of single-ended signaling into the future. This presentation b
 riefly explores what has driven the diversification in DRAM signaling sche
 mes over the decades\, will discuss the motivation behind present embodime
 nts\, and will project into the future to where the DRAM interface is like
 ly headed (e.g.\, features and functions necessary for continued energy-ef
 ficient bandwidth scaling).\n\nBldg: Qualcomm Q Auditorium\, SAN DIEGO\, C
 alifornia\, United States\, 92130
LOCATION:Bldg: Qualcomm Q Auditorium\, SAN DIEGO\, California\, United Stat
 es\, 92130
ORGANIZER:jfshi@ieee.org
SEQUENCE:6
SUMMARY:Memory Interfaces – Past\, Present and Future
URL;VALUE=URI:https://events.vtools.ieee.org/m/520387
X-ALT-DESC:Description: &lt;br /&gt;&lt;div&gt;ABSTRACT&lt;/div&gt;\n&lt;div&gt;\n&lt;p class=&quot;MsoNorm
 al&quot;&gt;DRAM standards have evolved tremendously over the last two-and-a-half 
 decades\, leading to diversification not only in the architecture of the m
 emory array but also in that of the off-chip interface. Application-specif
 ic signaling channels have influenced the transceiver design nearly as muc
 h as system power and bandwidth requirements have. The influence of the mu
 ltidrop server channel\, along with a broad range of target environments\,
  has led the DDR branch of JEDEC DRAMs to incorporate multi tap Decision F
 eedback Equalization to maximize flexibility\, while shrinking supply volt
 ages to facilitate energy reduction have led Low-Power DDR (LPDDR) to comp
 letely rethink the output driver structure. In parallel\, Graphics DDR (GD
 DR) has reached speeds requiring nearly equal care of the external channel
  and the chip itself. The adoption of multi-level signaling in GDDR6x and 
 GDDR7 to relax on-chip frequency requirements has only heightened the need
  for more rigorous co-design of transceiver\, package and system character
 istics. And\, of course\, the integration of silicon interposers to suppor
 t High Bandwidth Memory (HBM) has driven a paradigm shift in memory interf
 ace design. With all of these adaptations\, and many others not captured h
 ere\, the splintering DRAM family continues to push the boundaries of sing
 le-ended signaling into the future. This presentation briefly explores wha
 t has driven the diversification in DRAM signaling schemes over the decade
 s\, will discuss the motivation behind present embodiments\, and will proj
 ect into the future to where the DRAM interface is likely headed (e.g.\, f
 eatures and functions necessary for continued energy-efficient bandwidth s
 caling).&lt;/p&gt;\n&lt;/div&gt;
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