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PRODID:IEEE vTools.Events//EN
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TZID:Asia/Dhaka
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DTSTART:20380119T091407
TZOFFSETFROM:+0600
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DTSTART:20091231T230000
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BEGIN:VEVENT
DTSTAMP:20251226T064439Z
UID:9716A586-56DA-42A7-9E17-14179F92B766
DTSTART;TZID=Asia/Dhaka:20260108T140000
DTEND;TZID=Asia/Dhaka:20260108T170000
DESCRIPTION:In this seminar\, Dr. Haque will discuss the major challenges a
 nd opportunities in ultrawide bandgap semiconductors and explain how a com
 bined approach using modern fabrication methods\, improved processing tech
 niques\, careful study of material defects and interfaces\, and AI-assiste
 d analysis can address these issues. The session will highlight ongoing wo
 rk on better doping methods\, improved electrical contacts\, high-quality 
 material interfaces\, and enhanced heat management. Overall\, the talk wil
 l provide a clear and accessible overview of how these efforts are contrib
 uting to the development of more efficient and reliable electronic and pow
 er devices for future technologies.\n\n[]\n\nSpeaker(s):  Dr. Ariful Haque
  \, \n\nRoom: Room No. 208\, Bldg:  Department of Electrical and Electroni
 c Engineering\, University of Dhaka\, Room No. 208\, Department of Electri
 cal and Electronic Engineering\, University of Dhaka\, Dhaka - 1000\, Dhak
 a\, Dhaka\, Bangladesh\, 1000
LOCATION:Room: Room No. 208\, Bldg:  Department of Electrical and Electroni
 c Engineering\, University of Dhaka\, Room No. 208\, Department of Electri
 cal and Electronic Engineering\, University of Dhaka\, Dhaka - 1000\, Dhak
 a\, Dhaka\, Bangladesh\, 1000
ORGANIZER:ieeeedssbcdu@gmail.com
SEQUENCE:54
SUMMARY:FET100 Celebration Activity-Fabrication\, Doping\, Interfaces\, & C
 ontact Engineering in Emerging Ultrawide Bandgap Semiconductors.
URL;VALUE=URI:https://events.vtools.ieee.org/m/525720
X-ALT-DESC:Description: <br /><p><strong>&nbsp\;</strong></p>\n<p dir="ltr"
 >In this seminar\, Dr. Haque will discuss the major challenges and opportu
 nities in ultrawide bandgap semiconductors and explain how a combined appr
 oach using modern fabrication methods\, improved processing techniques\, c
 areful study of material defects and interfaces\, and AI-assisted analysis
  can address these issues. The session will highlight ongoing work on bett
 er doping methods\, improved electrical contacts\, high-quality material i
 nterfaces\, and enhanced heat management. Overall\, the talk will provide 
 a clear and accessible overview of how these efforts are contributing to t
 he development of more efficient and reliable electronic and power devices
  for future technologies.</p>\n<p><img src="https://events.vtools.ieee.org
 /vtools_ui/media/display/86a54dc9-af1e-43cf-b83e-d90e3faacb37" alt="" widt
 h="1060" height="556"></p>
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