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DTSTAMP:20260218T210340Z
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DTSTART;TZID=America/Chicago:20260218T110000
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DESCRIPTION:This presentation discusses high power monolithic microwave int
 egrated circuit (MMIC) power amplifier (PA) design in Gallium Arsenide (Ga
 As) and Gallium Nitride (GaN). At a high level\, GaN versus GaAs semicondu
 ctor technology from the perspective of power amplifier design metrics is 
 analyzed to help determine the relative advantages and disadvantages of ea
 ch technology. This is followed with an introduction of the most prevalent
  MMIC design topologies for the bulk of microwave applications which inclu
 de reactively matched\, non-uniform distributed\, balanced\, push-pull\, D
 oherty and serially combined. Following introduction of the main topologie
 s\, the presentation focuses on the potential pitfalls the MMIC designer c
 an encounter with detailed discussion on how to avoid them with the goal o
 f first past design success. The presentation relies on experience from th
 e author’s career with over 20 years of experience in the defense and co
 mmercial industries as well as academia. MMIC designers will appreciate th
 e candid explanation of the design topologies and pitfalls while non-desig
 ners will come away with a good working knowledge of what can be achieved 
 and what to watch out for.\n\nSpeaker(s): Michael \, \n\nRoom: AD 3.218\, 
 Bldg: Administrative Building\, 800 W Campbell Rd\, Richardson\, Texas\, U
 nited States\, 75080
LOCATION:Room: AD 3.218\, Bldg: Administrative Building\, 800 W Campbell Rd
 \, Richardson\, Texas\, United States\, 75080
ORGANIZER:exp230017@utdallas.edu
SEQUENCE:9
SUMMARY:Power Without Pain: High Power MMIC PA Design\, the Pitfalls and ho
 w to Avoid Them
URL;VALUE=URI:https://events.vtools.ieee.org/m/534884
X-ALT-DESC:Description: <br /><p class="MsoNormal">This presentation discus
 ses high power monolithic microwave integrated circuit (MMIC) power amplif
 ier (PA) design in Gallium Arsenide (GaAs) and Gallium Nitride (GaN).&nbsp
 \; At a high level\, GaN versus GaAs semiconductor technology from the per
 spective of power amplifier design metrics is analyzed to help determine t
 he relative advantages and disadvantages of each technology.&nbsp\; This i
 s followed with an introduction of the most prevalent MMIC design topologi
 es for the bulk of microwave applications which include reactively matched
 \, non-uniform distributed\, balanced\, push-pull\, Doherty and serially c
 ombined.&nbsp\; Following introduction of the main topologies\, the presen
 tation focuses on the potential pitfalls the MMIC designer can encounter w
 ith detailed discussion on how to avoid them with the goal of first past d
 esign success.&nbsp\; The presentation relies on experience from the autho
 r&rsquo\;s career with over 20 years of experience in the defense and comm
 ercial industries as well as academia.&nbsp\; MMIC designers will apprecia
 te the candid explanation of the design topologies and pitfalls while non-
 designers will come away with a good working knowledge of what can be achi
 eved and what to watch out for.</p>\n<p class="MsoNormal">&nbsp\;</p>
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