BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/New_York BEGIN:DAYLIGHT DTSTART:20260308T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20251102T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20260223T163015Z UID:48CA2899-9195-47E3-8AFB-F832502071E6 DTSTART;TZID=America/New_York:20260211T170000 DTEND;TZID=America/New_York:20260211T203000 DESCRIPTION:You are cordially invited to attend SMTA Boston chapter//iMAPS NE/IEEE Boston Reliability joint evening meeting at Kostas Research Instit ute (KRI) on the Northeastern University Innovation Campus.\n\nTopic: "Add itive Manufacturing of Microelectronics Including Passive and Active Compo nents for 3D HI and Advanced Packaging"\nPresented by: Prof. Ahmed Busnain a\, Ph.D. of Northeastern University\n\nDate: Wednesday\, Feb. 11\, 2026\n Time: 5:00 PM\nLocation: Kostas Research Institute (KRI) on the Northeaste rn University Innovation Campus\nDinner Cost: Free\, but Pre-Registration is Required\n\nLimit of 40 Attendees. [Register for your spot NOW!](https: //smta.org/events/EventDetails.aspx?id=2030953)\n\nA new high-throughput a dditive manufacturing of nano and microelectronics utilizes direct assembl y of nanoscale particles onto interposers\, wafers\, or boards. The techno logy enables the printing of inorganic conductors\, semiconductors and die lectrics. It has been demonstrated for printing passive and active compone nts including logic gates at the nano and microscale. Transistors with an on/off ratio greater than\n10 6 have been demonstrated. This technology en ables the fabrication of nanoelectronics and electronic components while r educing the cost by 10 to 100 times compared to conventional fabrication a nd can print 1000 times faster than ink-jet-based printing. Results show h igh-throughput printing of interconnects and circuit components at a scale equal to or less than 2 microns. Fully additively manufactured\ncapacitor s printed on silicon\, sapphire\, and polymer substrates will be presented . The results will show printed capacitors ranging down to 20 x 20 µm wit h capacitance of femto farads to nano farads. The results will also show a dditively printed MOSFET and logic gates such as NAND with high on/off rat ios. A fully automated printing platform (a Fab-in-a-Box) was designed and built for printing microelectronics with\nminimum-sized features down to 300 nm for several advanced packaging applications and will be presented.\ n\nSpeaker(s): Ahmed A. Busnaina\, Ph.D.\, \n\nAgenda: \nAgenda:\n5:00 PM - 6:00 PM - Registration and Networking\n5:30 PM - 6:00 PM - Dinner\n6:00 PM - 7:00 PM - Feature Technical Presentation\n7:00 PM - Tour & Networking \n8:30 PM - Adjourn\n\nBldg: Kostas Research Institute (KRI)\, Northeaster n University Innovation Campus\, 141 South Bedford Street\, Burlington\, M assachusetts\, United States LOCATION:Bldg: Kostas Research Institute (KRI)\, Northeastern University In novation Campus\, 141 South Bedford Street\, Burlington\, Massachusetts\, United States ORGANIZER:weidman@ll.mit.edu SEQUENCE:3 SUMMARY:"Additive Manufacturing of Microelectronics Including Passive and A ctive Components for 3D HI and Advanced Packaging" URL;VALUE=URI:https://events.vtools.ieee.org/m/535124 X-ALT-DESC:Description: <br /><p>You are cordially invited to attend SMTA B oston chapter//iMAPS NE/IEEE Boston Reliability joint evening meeting at K ostas Research Institute (KRI) on the Northeastern University Innovation C ampus.<br><br>Topic: "Additive Manufacturing of Microelectronics Including Passive and Active Components for 3D HI and Advanced Packaging"<br>Presen ted by: Prof. Ahmed Busnaina\, Ph.D. of Northeastern University<br><br>Dat e: Wednesday\, Feb. 11\, 2026<br>Time: 5:00 PM<br>Location: Kostas Researc h Institute (KRI) on the Northeastern University Innovation Campus<br>Dinn er Cost: Free\, but Pre-Registration is Required</p>\n<p><strong>Limit of 40 Attendees. <a href="https://smta.org/events/EventDetails.aspx?id=203095 3">Register for your spot NOW!</a></strong></p>\n<p>A new high-throughput additive manufacturing of nano and microelectronics utilizes direct assemb ly of&nbsp\;nanoscale particles onto interposers\, wafers\, or boards. The technology enables the printing of inorganic&nbsp\;conductors\, semicondu ctors and dielectrics. It has been demonstrated for printing passive and a ctive&nbsp\;components including logic gates at the nano and microscale. T ransistors with an on/off ratio greater than<br>10 6 have been demonstrate d. This technology enables the fabrication of nanoelectronics and electron ic&nbsp\;components while reducing the cost by 10 to 100 times compared to conventional fabrication and can&nbsp\;print 1000 times faster than ink-j et-based printing. Results show high-throughput printing of interconnects& nbsp\;and circuit components at a scale equal to or less than 2 microns. F ully additively manufactured<br>capacitors printed on silicon\, sapphire\, and polymer substrates will be presented. The results will show&nbsp\;pri nted capacitors ranging down to 20 x 20 &micro\;m with capacitance of femt o farads to nano farads. The&nbsp\;results will also show additively print ed MOSFET and logic gates such as NAND with high on/off ratios. A&nbsp\;fu lly automated printing platform (a Fab-in-a-Box) was designed and built fo r printing microelectronics with<br>minimum-sized features down to 300 nm for several advanced packaging applications and will be&nbsp\;presented.</ p><br /><br />Agenda: <br /><p>Agenda:<br>5:00 PM - 6:00 PM&nbsp\; -&nbsp\ ; Registration and Networking<br>5:30 PM - 6:00 PM&nbsp\; -&nbsp\; Dinner< br>6:00 PM - 7:00 PM&nbsp\; -&nbsp\; Feature Technical Presentation<br>7:0 0 PM&nbsp\; - Tour &amp\; Networking<br>8:30 PM&nbsp\; -&nbsp\; Adjourn</p > END:VEVENT END:VCALENDAR