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CALSCALE:GREGORIAN
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TZOFFSETFROM:+1000
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TZOFFSETFROM:+1100
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DTSTAMP:20260216T114257Z
UID:EB277AD2-FD29-4C2A-843E-3085461E199B
DTSTART;TZID=Australia/Canberra:20260206T110000
DTEND;TZID=Australia/Canberra:20260206T120000
DESCRIPTION:Modern semiconductor technology is increasingly limited not onl
 y by critical dimensions\, but also by the rising complexity of 3D integra
 tion\, heterogeneous materials\, and fabrication-induced damage. Our group
  develops nanostructured semiconductor materials and devices by combining 
 bottom-up MOCVD growth with top-down nanofabrication\, with the goal of en
 abling device architectures that expand what is possible in electronics\, 
 photonics\, quantum technologies\, and emerging biomedical applications.\n
 \nThis talk will highlight two nanofabrication platforms we developed to a
 ddress these scaling and integration challenges. First\, I will present an
  unconventional anisotropic etching approach\, metal-assisted chemical etc
 hing (MacEtch)\, that enables high-aspect-ratio semiconductor nanostructur
 es with minimal process damage. I will discuss how MacEtch provides a vers
 atile route to complex geometries and show representative devices includin
 g MacEtch-enabled β-Ga₂O₃ FinFETs and damage-free III-N microLED stru
 ctures. Second\, I will introduce our 3D self-rolled-up membrane (S-RuM) p
 latform for extreme miniaturization of passive components\, including indu
 ctors\, transformers\, and LC resonators for radio-frequency integrated ci
 rcuits. I will describe the underlying mechanics\, fabrication flow\, and 
 how 3D geometry can unlock performance and footprint advantages that are d
 ifficult to achieve with planar approaches. If time allows\, I will close 
 with recent directions in ferro-nitride (e.g. AlScN) MOCVD growth and devi
 ce concepts that connect materials epitaxy to new device opportunities.\n\
 nSpeaker(s): Xiuling\, \n\nRoom: Rm 4.03\, Bldg: Research School of Physic
 s\, Building 160\, Conference room 4.03\, 60 Mills Rd\, Acton\, Canberra\,
  Australian Capital Territory\, Australia\, 2601\, Virtual: https://events
 .vtools.ieee.org/m/535498
LOCATION:Room: Rm 4.03\, Bldg: Research School of Physics\, Building 160\, 
 Conference room 4.03\, 60 Mills Rd\, Acton\, Canberra\, Australian Capital
  Territory\, Australia\, 2601\, Virtual: https://events.vtools.ieee.org/m/
 535498
ORGANIZER:zhe.li@anu.edu.au
SEQUENCE:24
SUMMARY:Engineering the Next Semiconductor Paradigm
URL;VALUE=URI:https://events.vtools.ieee.org/m/535498
X-ALT-DESC:Description: <br /><p class="MsoNormal" style="text-align: justi
 fy\; margin: 0cm 5.9pt .0001pt 5.95pt\;"><span lang="EN-US" style="font-si
 ze: 12.0pt\; mso-bidi-font-size: 11.0pt\;">Modern semiconductor technology
  is increasingly limited not only by critical dimensions\, but also by the
  rising complexity of 3D integration\, heterogeneous materials\, and fabri
 cation-induced damage. Our group develops nanostructured semiconductor mat
 erials and devices by combining bottom-up MOCVD growth with top-down nanof
 abrication\, with the goal of enabling device architectures that expand wh
 at is possible in electronics\, photonics\, quantum technologies\, and eme
 rging biomedical applications.</span></p>\n<p class="MsoNormal" style="tex
 t-align: justify\; margin: 0cm 5.9pt .0001pt 5.95pt\;"><span lang="EN-US" 
 style="font-size: 12.0pt\; mso-bidi-font-size: 11.0pt\;">&nbsp\;</span></p
 >\n<p class="MsoNormal" style="text-align: justify\; margin: 0cm 5.9pt .00
 01pt 5.95pt\;"><span lang="EN-US" style="font-size: 12.0pt\; mso-bidi-font
 -size: 11.0pt\;">This talk will highlight two nanofabrication platforms we
  developed to address these scaling and integration challenges. First\, I 
 will present an unconventional anisotropic etching approach\, metal-assist
 ed chemical etching (MacEtch)\, that enables high-aspect-ratio semiconduct
 or nanostructures with minimal process damage. I will discuss how MacEtch 
 provides a versatile route to complex geometries and show representative d
 evices including MacEtch-enabled &beta\;-Ga₂O₃ FinFETs and damage-free
  III-N microLED structures. Second\, I will introduce our 3D self-rolled-u
 p membrane (S-RuM) platform for extreme miniaturization of passive compone
 nts\, including inductors\, transformers\, and LC resonators for radio-fre
 quency integrated circuits. I will describe the underlying mechanics\, fab
 rication flow\, and how 3D geometry can unlock performance and footprint a
 dvantages that are difficult to achieve with planar approaches. If time al
 lows\, I will close with recent directions in ferro-nitride (e.g. AlScN) M
 OCVD growth and device concepts that connect materials epitaxy to new devi
 ce opportunities.</span></p>
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