BEGIN:VCALENDAR
VERSION:2.0
PRODID:IEEE vTools.Events//EN
CALSCALE:GREGORIAN
BEGIN:VTIMEZONE
TZID:Europe/Rome
BEGIN:DAYLIGHT
DTSTART:20260329T030000
TZOFFSETFROM:+0100
TZOFFSETTO:+0200
RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=3
TZNAME:CEST
END:DAYLIGHT
BEGIN:STANDARD
DTSTART:20261025T020000
TZOFFSETFROM:+0200
TZOFFSETTO:+0100
RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=10
TZNAME:CET
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTAMP:20260408T104952Z
UID:B907A0A4-FB7F-4CCE-9E09-5A4710681279
DTSTART;TZID=Europe/Rome:20260626T100000
DTEND;TZID=Europe/Rome:20260626T110000
DESCRIPTION:EDS Distinguished Lecture by Professor Mikael Östling\, KTH Ro
 yal Institute of Technology\, Sweden\n\nThe rapid electrification of our s
 ociety is in full swing. The need for better energy efficiency is urgent. 
 The progress in the development of emerging new device technologies is ver
 y promising. Semiconductor materials with wide bandgap are maturing fast. 
 Both gallium nitride (GaN) and silicon carbide (SiC) devices are today to 
 be found in several commercial applications such as power supplies for com
 puters and charging equipment for handheld units. High power applications 
 are also rolling out for automotive industry and EV charging networks. Man
 y hundreds of TWh will be saved. Yet\, much more development is needed and
  expected. The material quality is far from perfect\, but promising. This 
 talk will focus on the current status and projections on high voltage SiC 
 and GaN device technology for the electrical infrastructure and promising 
 high temperature applications. A brief presentation regarding the activiti
 es for the EU Chips JU Pilot Line 4 will be included.\n\nSpeaker(s): Mikae
 l\, \n\nBldg: Centro Congressi Luigi Zordan\, P.za S. Basilio\, 3\, L’Aq
 uila\, Abruzzi\, Italy\, 67100
LOCATION:Bldg: Centro Congressi Luigi Zordan\, P.za S. Basilio\, 3\, L’Aq
 uila\, Abruzzi\, Italy\, 67100
ORGANIZER:pierpaolo.palestri@unimore.it
SEQUENCE:19
SUMMARY:The new era of power efficient devices by utilizing wide bandgap te
 chnology - opportunities and challenges
URL;VALUE=URI:https://events.vtools.ieee.org/m/553432
X-ALT-DESC:Description: <br /><p>EDS Distinguished Lecture by Professor Mik
 ael &Ouml\;stling\, KTH Royal Institute of Technology\, Sweden</p>\n<p cla
 ss="MsoNormal"><span style="mso-ansi-language: EN-US\;">The rapid electrif
 ication of our society is in full swing. The need for better energy effici
 ency is urgent. The progress in the development of emerging new device tec
 hnologies is very promising. Semiconductor materials with wide bandgap are
  maturing fast. Both gallium nitride (GaN) and silicon carbide (SiC) devic
 es are today to be found in several commercial applications such as power 
 supplies for computers and charging equipment for handheld units. High pow
 er applications are also rolling out for automotive industry and EV chargi
 ng networks. Many hundreds of TWh will be saved. Yet\, much more developme
 nt is needed and expected. The material quality is far from perfect\, but 
 promising. This talk will focus on the current status and projections on h
 igh voltage SiC and GaN device technology for the electrical infrastructur
 e and promising high temperature applications. A brief presentation regard
 ing the activities for the EU Chips JU Pilot Line 4 will be included.</spa
 n></p>\n<p>&nbsp\;</p>
END:VEVENT
END:VCALENDAR