BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/New_York BEGIN:DAYLIGHT DTSTART:20260308T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20261101T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20260411T160138Z UID:4033E0AE-2D5B-453A-9514-63F2A3ECEE30 DTSTART;TZID=America/New_York:20260610T180000 DTEND;TZID=America/New_York:20260610T190200 DESCRIPTION:[][]\n\nSilicon has been the dominant material for electronic c omputing for decades and very likely will stay dominant for the foreseeabl e future. However\, it is well-known that Moore’s law and Dennard’s sc aling that propelled Silicon into this dominant position are long dead. Th erefore\, a fervent search for (i) new semiconductors that could directly replace silicon or (ii) new architectures with novel materials/devices add ed onto silicon or (iii) new physics/state-variables or a combination of a bove has been the subject of much of the electronic materials and devices research of the past 2 decades. In short\, there is a pressing need for co mplementing and supplementing Silicon to operate with greater energy effic iency\, speed and handle greater amounts of data. This is further necessar y since a completely novel and paradigm changing computing platform (e.g. all optical computing or quantum computing) remains out of reach for now.\ n\nThe above is\, however\, not possible without fundamental innovation in new electronic materials and devices. Therefore\, in this talk\, I will t ry to make the case of how novel layered two-dimensional (2D) chalcogenide materials1 and three-dimensional (3D) nitride materials might present int eresting avenues to overcome some of the limitations being faced by Silico n (as well as Silicon Carbide) hardware.\n\nI will end the talk with a bro ad perspective on the role of novel materials that could turbo-charge sili con\, silicon carbide and other pervasive semiconductor technologies for e lectronic computing.\n\nReferences:\n(1) Song\, S.\; Rahaman\, M.\; Jariwa la\, D. ACS Nano 2024\, 18\, 10955–10978.\n\nPicture Credit:\nhttps://ww w.sciencedirect.com/science/article/pii/S2590238523003685\, Wafer-scale gr owth of two-dimensional\, phase-pure InSe\n\nCo-sponsored by: Gordon Burkh ead\, Sreekanth Narayan\n\nSpeaker(s): Deep Jariwala\n\nAgenda: \n6:00 PM - Start of online/virtual event. Local chapter and Section updates\, intro ductions\, etc.\n6:05 PM - Start of Distinguished Lecture\n6:55 PM - Forma l End of Lecture\, Start of Q&A - Discussions\n7:15 PM - Formal end of eve nt\, Vote of thanks to the Speaker....\n\nVirtual: https://events.vtools.i eee.org/m/554273 LOCATION:Virtual: https://events.vtools.ieee.org/m/554273 ORGANIZER:sharan.kalwani@ieee.org SEQUENCE:55 SUMMARY:Two-Dimensional Semiconductors for Low-Power Logic and Memory Devic es URL;VALUE=URI:https://events.vtools.ieee.org/m/554273 X-ALT-DESC:Description: <br /><p style="text-align: left\;"><img src="https ://en.wikipedia.org/wiki/File:Boron-arsenide-unit-cell-1963-CM-3D-balls.pn g" alt=""><img style="border-width: 1px\; display: block\; margin-left: au to\; margin-right: auto\;" src="https://events.vtools.ieee.org/vtools_ui/m edia/display/29136c20-2dbd-4079-b3b8-bc4c3ceee718" alt="" width="375" heig ht="375"></p>\n<p class="MsoNormal"><span style="font-size: 12.0pt\; font- family: 'Times New Roman'\,serif\; mso-fareast-font-family: Batang\;">Sili con has been the dominant material for electronic computing for decades an d very likely will stay dominant for the foreseeable future. However\, it is well-known that Moore&rsquo\;s law and Dennard&rsquo\;s scaling that pr opelled Silicon into this dominant position are long dead. Therefore\, a f ervent search for (i) new semiconductors that could directly replace silic on or (ii) new architectures with novel materials/devices added onto silic on or (iii) new physics/state-variables or a combination of above has been the subject of much of the electronic materials and devices research of t he past 2 decades. In short\, there is a pressing need for complementing a nd supplementing Silicon to operate with greater energy efficiency\, speed and handle greater amounts of data. This is further necessary since a com pletely novel and paradigm changing computing platform (e.g. all optical c omputing or quantum computing) remains out of reach for now. </span></p>\n <p class="MsoNormal"><span style="font-size: 12.0pt\; font-family: 'Times New Roman'\,serif\; mso-fareast-font-family: Batang\;"><span style="mso-sp acerun: yes\;">&nbsp\;&nbsp\;&nbsp\; </span>The above is\, however\, not p ossible without fundamental innovation in new electronic materials and dev ices. Therefore\, in this talk\, I will try to make the case of how novel layered two-dimensional (2D) chalcogenide materials<sup>1</sup> and three- dimensional (3D) nitride materials might present interesting avenues to ov ercome some of the limitations being faced by Silicon (as well as Silicon Carbide) hardware.</span><span style="font-size: 12.0pt\; font-family: 'Ti mes New Roman'\,serif\; mso-fareast-font-family: Batang\;"> </span></p>\n< p class="MsoNormal"><span style="font-size: 12.0pt\; font-family: 'Times N ew Roman'\,serif\; mso-fareast-font-family: Batang\;"><span style="mso-spa cerun: yes\;">&nbsp\;&nbsp\;&nbsp\; </span>I will end the talk with a broa d perspective on the role of novel materials that could turbo-charge silic on\, silicon carbide and other pervasive semiconductor technologies for el ectronic computing.</span></p>\n<p class="MsoNormal"><strong><span style=" font-size: 12.0pt\; font-family: 'Times New Roman'\,serif\; mso-fareast-fo nt-family: Batang\;">References:<br></span></strong><span style="font-size : 12.0pt\; font-family: 'Times New Roman'\,serif\; mso-fareast-font-family : Batang\;">(1) Song\, S.\; Rahaman\, M.\; Jariwala\, D. ACS Nano 2024\, 1 8\, 10955&ndash\;10978.</span></p>\n<p class="MsoNormal"><strong><span sty le="font-size: 12.0pt\; font-family: 'Times New Roman'\,serif\; mso-fareas t-font-family: Batang\;">Picture Credit: <br></span></strong><span style=" font-size: 12.0pt\; font-family: 'Times New Roman'\,serif\; mso-fareast-fo nt-family: Batang\;"><a href="https://www.sciencedirect.com/science/articl e/pii/S2590238523003685">https://www.sciencedirect.com/science/article/pii /S2590238523003685</a>\, Wafer-scale growth of two-dimensional\, phase-pur e InSe</span></p><br /><br />Agenda: <br /><p>6:00 PM - Start of online/vi rtual event. Local chapter and Section updates\, introductions\, etc.<br>6 :05 PM - Start of Distinguished Lecture<br>6:55 PM - Formal End of Lecture \, Start of Q&amp\;A - Discussions<br>7:15 PM - Formal end of event\, Vote of thanks to the Speaker....</p> END:VEVENT END:VCALENDAR