BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Los_Angeles BEGIN:DAYLIGHT DTSTART:20260308T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20261101T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20260415T014910Z UID:A3B4DC9E-FD6B-4448-94D9-1AE30F6CC23B DTSTART;TZID=America/Los_Angeles:20260424T114500 DTEND;TZID=America/Los_Angeles:20260424T131500 DESCRIPTION:Overview\n\nWebinar EDS SCV/SF event\, Topic: "Robustness and R eliability of Wide Bandgap Power Semiconductors"\, Presenter: Dr. Layi Ala tise\n\n"Robustness and Reliability of Wide Bandgap Power Semiconductors" Lecture by Dr. Layi Alatise\n\nThe Electron Devices Society Santa Clara Va lley/San Francisco joint Chapter and Device Reliability Physics committee are hosting Dr. Layi Alatise\n\nWhen: Friday\, April 24th\, 2026 – 11:4 5AM to 1:15PM (PDT)\n\n11:45AM - 12PM: Introduction\n\n12PM-12:45PM: Lectu re\n\n12:45PM-12:55PM: Q&A\n\n1PM Adjourn\n\nWhere: Zoom\n\nZoom\n\nThis i s an online event ONLY and attendees can participate via Zoom.\n\nWe will send the Zoom meeting information to registrants one day before the meetin g. Please make sure you register.\n\nContact: ieeescveds at gmail.com\n\nS peaker: Dr. Layi Alatise\n\nAbstract:\n\nWide bandgap devices are increasi ngly penetrating the automotive market and are becoming prime candidates f or implementation in applications like traction inverters and battery char gers. The mission profile of the traction inverter is a particularly aggre ssive one since the electrothermal stresses on the power devices vary sign ificantly in amplitude and frequency as the motor drive goes through vario us stages of the drive cycle including acceleration\, deceleration\, stall ing etc. Historically\, the traction converter has been implemented using silicon devices where the performance and reliability is well known and un derstood. Application of WBG devices like SiC MOSFETs and GaN power device s in automotive applications requires understanding of the reliability and qualification procedures especially according to the automotive standard. SiC and GaN power devices have varying internal physics and modes of oper ation with vastly varying robustness and reliability performance compared to silicon devices. Given the sensitive nature of the application\, these devices must pass stringent automotive reliability tests and guidelines de fined by the Automotive Electronics Council (AEC)\, the Joint Electron Dev ice Engineering Council (JEDEC-JC70) and the European Centre of power elec tronics (AQG).\n\nVirtual: https://events.vtools.ieee.org/m/555035 LOCATION:Virtual: https://events.vtools.ieee.org/m/555035 ORGANIZER:ieeescveds@gmail.com SEQUENCE:17 SUMMARY:IEEE EDS Webinar: Robustness and Reliability of Wide Bandgap Power Semiconductors URL;VALUE=URI:https://events.vtools.ieee.org/m/555035 X-ALT-DESC:Description: <br /><div class="Overview_title__FO2Z4">Overview</ div>\n<div class="Overview_summaryWrapper__xGQx4">&nbsp\;</div>\n<div clas s="AboutThisEventEmbedded_container__wdFiD">\n<div class="StructuredModule Renderer_structuredContent__k7mNB StructuredModuleRenderer_text__GaXOv" da ta-testid="text-content">\n<div>\n<p>Webinar EDS SCV/SF event\, Topic: "<s trong>Robustness and Reliability of Wide Bandgap Power Semiconductors</str ong>"\, Presenter: Dr. Layi Alatise</p>\n</div>\n</div>\n<div class="Struc turedModuleRenderer_structuredContent__k7mNB StructuredModuleRenderer_text __GaXOv" data-testid="text-content">\n<p><strong>"Robustness and Reliabili ty of Wide Bandgap Power Semiconductors" Lecture by Dr.</strong><strong> L ayi Alatise</strong></p>\n<h3>&nbsp\;</h3>\n<p>The Electron Devices Societ y Santa Clara Valley/San Francisco joint Chapter and <span class="organize r-info__name-link">Device Reliability Physics committee are </span>hosting Dr.&nbsp\;<strong> </strong>Layi Alatise</p>\n<h3>When: Friday\, April 24 th\, 2026 &ndash\; 11:45AM to 1:15PM (PDT)</h3>\n<p>11:45AM - 12PM: Introd uction</p>\n<p>12PM-12:45PM: Lecture</p>\n<p>12:45PM-12:55PM: Q&amp\;A</p> \n<p>1PM Adjourn</p>\n<h3>Where: Zoom</h3>\n<h2 class="event-title css-0"> Zoom</h2>\n<p><em>This is an online event ONLY and attendees can participa te via Zoom.</em></p>\n<p>We will send the Zoom meeting information to reg istrants one day before the meeting. Please make sure you register.</p>\n< h4>Contact: ieeescveds at gmail.com</h4>\n<h2><strong>Speaker: Dr. </stron g><strong>Layi Alatise</strong></h2>\n<h3>Abstract:</h3>\n<p>Wide bandgap devices are increasingly penetrating the automotive market and are becomin g prime candidates for implementation in applications like traction invert ers and battery chargers. The mission profile of the traction inverter is a particularly aggressive one since the electrothermal stresses on the pow er devices vary significantly in amplitude and frequency as the motor driv e goes through various stages of the drive cycle including acceleration\, deceleration\, stalling etc. Historically\, the traction converter has bee n implemented using silicon devices where the performance and reliability is well known and understood. Application of WBG devices like SiC MOSFETs and GaN power devices in automotive applications requires understanding of the reliability and qualification procedures especially according to the automotive standard. SiC and GaN power devices have varying internal physi cs and modes of operation with vastly varying robustness and reliability p erformance compared to silicon devices. Given the sensitive nature of the application\, these devices must pass stringent automotive reliability tes ts and guidelines defined by the Automotive Electronics Council (AEC)\, th e Joint Electron Device Engineering Council (JEDEC-JC70) and the European Centre of power electronics (AQG).</p>\n</div>\n</div> END:VEVENT END:VCALENDAR