BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Denver BEGIN:DAYLIGHT DTSTART:20260308T030000 TZOFFSETFROM:-0700 TZOFFSETTO:-0600 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:MDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20261101T010000 TZOFFSETFROM:-0600 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:MST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20260515T150405Z UID:149672A8-7809-49F6-8AFB-40784DF5BC82 DTSTART;TZID=America/Denver:20260512T180000 DTEND;TZID=America/Denver:20260512T200000 DESCRIPTION:Distinguished Lecture on Source-Gated Transistors\n\nDr. Radu S porea\, Distinguished Lecturer\n\nElectron Devices Society\n\nAdvanced Tec hnology Institute\, School of Computer Science and Electronic Engineering\ , University of Surrey\n\nEditorial Note: The Source-Gated Transistor offe rs significantly higher gain than the standard MOS transistor. This can pr ovide lower power and more manufacturable large arrays. These kinds of dev ices are expected to be used in applications that require low-cost manufac turing\, mechanical flexibility\, low power and various forms of sensing. The popular applications are for low cost flexible displays\, bandaid-like medical sensors for glucose\, pulse oximetry and other body functions. Od or and gas sensors are also important.\n\nKey considerations for obtaining high performance contact-controlled thin-film transistors\n\nSource-gated transistors (SGTs) have a relatively long history of development but only recently have mainstream technologies allowed for their effective impleme ntation at scale. This talk is addressed to those interested in efficient analog and mixed signal design with advanced thin-film transistors. They p rovide a development progression with a forward look toward SGT applicatio n to future edge processing of sensor data\, signal conditioning\, and cur rent-mode driving. Crucially\, the concept can be applied in practically a ny material system. As such\, the talk will present the fundamentals of co ntact effect engineering and modeling\, design rules for successful SGT im plementation\, specifics of performance optimization in thin-film silicon\ , organic\, and oxide semiconductors\, and structural evolutions for addit ional functionality. Finally\, the next step in the evolution of contact-c ontrolled thin-film transistor\, the multimodal transistor (MMT) will be b riefly introduced.\n\nSpeaker(s): Radu Sporea\, \n\nBldg: Downtown Panino' s Restaurant\, 604 North Tejon Street\, Colorado Springs\, Colorado\, Unit ed States\, 80903 LOCATION:Bldg: Downtown Panino's Restaurant\, 604 North Tejon Street\, Colo rado Springs\, Colorado\, United States\, 80903 ORGANIZER:tkalkur@uccs.edu SEQUENCE:26 SUMMARY:Distinguished Lecture on Source-gated Transistors URL;VALUE=URI:https://events.vtools.ieee.org/m/555736 X-ALT-DESC:Description: <br /><p style="text-align: center\;"><strong>Disti nguished Lecture on Source-Gated Transistors</strong></p>\n<p style="text- align: center\;"><strong>Dr. Radu Sporea\, Distinguished Lecturer</strong> </p>\n<p style="text-align: center\;"><strong>Electron Devices Society</st rong></p>\n<p style="text-align: center\;"><strong>Advanced Technology Ins titute\, School of Computer Science and Electronic Engineering\, Universit y of Surrey</strong></p>\n<p><span class="Apple-converted-space">&nbsp\;</ span><strong>Editorial Note:</strong><span class="Apple-converted-space">& nbsp\; </span>The Source-Gated Transistor offers significantly higher gain than the standard MOS transistor. This can provide lower power and more m anufacturable large arrays. These kinds of devices are expected to be used in applications that require low-cost manufacturing\, mechanical flexibil ity\, low power and various forms of sensing. The popular applications are for low cost flexible displays\,<span class="Apple-converted-space">&nbsp \; </span>bandaid-like medical sensors for glucose\, pulse oximetry and ot her body functions. Odor and gas sensors are also important.</p>\n<p><img src="https://events.vtools.ieee.org/vtools_ui/media/display/88c90eb5-bbce- 44f6-822e-f29a979503f2"></p>\n<p><strong>Key considerations for obtaining high performance contact-controlled thin-film transistors</strong></p>\n<p >Source-gated transistors (SGTs) have a relatively long history of develop ment but only recently have mainstream technologies allowed for their effe ctive implementation at scale. This talk is addressed to those interested in efficient analog and mixed signal design with advanced thin-film transi stors. They provide a development progression with a forward look toward S GT application to future edge processing of sensor data\, signal condition ing\, and current-mode driving. Crucially\, the concept can be applied in practically any material system. As such\, the talk will present the funda mentals of contact effect engineering and modeling\, design rules for succ essful SGT implementation\, specifics of performance optimization in thin- film silicon\, organic\, and oxide semiconductors\, and structural evoluti ons for additional functionality. Finally\, the next step in the evolution of contact-controlled thin-film transistor\, the multimodal transistor (M MT) will be briefly introduced.</p> END:VEVENT END:VCALENDAR