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DTSTART:19910915T010000
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DTSTAMP:20260612T145538Z
UID:460A11CB-7AAC-4E7F-9C50-A24A5C182FB2
DTSTART;TZID=Asia/Shanghai:20260611T100000
DTEND;TZID=Asia/Shanghai:20260612T000000
DESCRIPTION:As semiconductor technologies advance toward complex chiplet in
 tegration and extreme miniaturization\, the reliability of integrated circ
 uit (IC) interconnections has emerged as a primary bottleneck for system p
 erformance. High current densities in these scaled interconnects make elec
 tromigration (EM) a critical failure mechanism. However\, traditional asse
 ssment methods\, such as Black’s Equation\, are increasingly inadequate\
 ; they lack the capability to localize void-nucleation sites or effectivel
 y couple the complex 3D multi-physics driving forces—specifically therma
 l and thermo-mechanical stress gradients—present in realistic structures
 .\n\nThis talk introduces an advanced simulation toolkit developed as an A
 nsys Customization Toolkit designed for the rapid and accurate assessment 
 of interconnect reliability. By utilizing a dynamic Atomic Flux Divergence
  (AFD) formulation derived from the first principles of thermodynamics\, t
 he toolkit captures the spatial-temporal evolution of EM-induced degradati
 on.\n\nA key innovation of this toolkit is its integration of microscale d
 efect dynamics and energy barriers—parameters often experimentally inacc
 essible—computed via Density-Functional Theory (DFT) and Finite-Element 
 Analysis (FEA). This enables the modeling of synergistic effects between e
 lectron-wind\, thermal gradients\, and stress-migration in a full 3D envir
 onment. With such ab-initio modeling\, strong correlation between estimate
 d failure times and experimental data\, achieving low error rates for Copp
 er (0.37%) and Aluminum (0.27%) interconnects are observed. This toolkit c
 an facilitate the evaluation of novel materials\, barrier metals\, and lay
 outs before committing to resource-intensive back-end-of-line (BEOL) proce
 ss development.\n\nCo-sponsored by: IEEE EDS Guangzhou Chapeter\n\nSpeaker
 (s): Cher Ming\n\n广州市增城区朱村街朱村大道西78号\, guangz
 hou\, Guangdong\, China\, 511370
LOCATION:广州市增城区朱村街朱村大道西78号\, guangzhou\, Guan
 gdong\, China\, 511370
ORGANIZER:leiwang@ceprei.com
SEQUENCE:20
SUMMARY:A Multi-Physics Toolkit for Predictive Electromigration Modeling in
  Advanced IC Interconnections
URL;VALUE=URI:https://events.vtools.ieee.org/m/557803
X-ALT-DESC:Description: <br /><p class="MsoNormal" style="margin-bottom: 8.
 0pt\; line-height: 115%\;"><span lang="EN-US">As semiconductor technologie
 s advance toward complex chiplet integration and extreme miniaturization\,
  the reliability of integrated circuit (IC) interconnections has emerged a
 s a primary bottleneck for system performance. High current densities in t
 hese scaled interconnects make electromigration (EM) a critical failure me
 chanism. However\, traditional assessment methods\, such as Black&rsquo\;s
  Equation\, are increasingly inadequate\; they lack the capability to loca
 lize void-nucleation sites or effectively couple the complex 3D multi-phys
 ics driving forces&mdash\;specifically thermal and thermo-mechanical stres
 s gradients&mdash\;present in realistic structures.</span></p>\n<p class="
 MsoNormal" style="margin-bottom: 8.0pt\; line-height: 115%\;"><span lang="
 EN-US">This talk introduces an advanced simulation toolkit developed as an
  Ansys Customization Toolkit designed for the rapid and accurate assessmen
 t of interconnect reliability. By utilizing a dynamic Atomic Flux Divergen
 ce (AFD) formulation derived from the first principles of thermodynamics\,
  the toolkit captures the spatial-temporal evolution of EM-induced degrada
 tion.</span></p>\n<p class="MsoNormal"><span lang="EN-US">A key innovation
  of this toolkit is its integration of microscale defect dynamics and ener
 gy barriers&mdash\;parameters often experimentally inaccessible&mdash\;com
 puted via Density-Functional Theory (DFT) and Finite-Element Analysis (FEA
 ). This enables the modeling of synergistic effects between electron-wind\
 , thermal gradients\, and stress-migration in a full 3D environment.<span 
 style="mso-spacerun: yes\;">&nbsp\; </span>With such ab-initio modeling\, 
 strong correlation between estimated failure times and experimental data\,
  achieving low error rates for Copper (0.37%) and Aluminum (0.27%) interco
 nnects are observed.<span style="mso-spacerun: yes\;">&nbsp\; </span>This 
 toolkit can facilitate the evaluation of novel materials\, barrier metals\
 , and layouts before committing to resource-intensive back-end-of-line (BE
 OL) process development.&nbsp\;</span></p>\n<p class="MsoNormal"><span lan
 g="EN-US"><img src="https://events.vtools.ieee.org/vtools_ui/media/display
 /30997777-d983-4775-b103-083e544ffdd1" width="995" height="523"></span></p
 >
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