BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Europe/Paris BEGIN:DAYLIGHT DTSTART:20260329T030000 TZOFFSETFROM:+0100 TZOFFSETTO:+0200 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=3 TZNAME:CEST END:DAYLIGHT BEGIN:STANDARD DTSTART:20261025T020000 TZOFFSETFROM:+0200 TZOFFSETTO:+0100 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=10 TZNAME:CET END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20260514T154200Z UID:98E3D4D4-632C-426D-9DFC-835EDDEC80FB DTSTART;TZID=Europe/Paris:20260526T150000 DTEND;TZID=Europe/Paris:20260526T160000 DESCRIPTION:Biography\n\nShunsuke Fukami is a Professor of the Research Ins titute of Electrical Communication (RIEC)\, and the director of the Center for Science and Innovation in Spintronics (CSIS) of Tohoku University\, J apan. His areas of expertise include spintronics physics/materials/devices and their application to integrated circuits and novel-computing hardware .He received his doctor degree in 2012 from Nagoya University. He joined N EC Corporation in 2005 and moved to Tohoku University in 2011. Since 2020\ , he has served as a Full Professor at Tohoku University.\n\nAbstract\n\nI n this seminar\, I will discuss two topics studied in Spintronics Laborato ry at the Research Institute of Electrical Communication in Tohoku Univers ity. The first topic is spintronics with noncollinear antiferromagnet. Non collinear antiferromagnets\, represented by Mn3Sn\, show intriguing proper ties similar to ferromagnets such as the anomalous Hall effect\, despite v anishingly small net magnetization. We achieved an epitaxial growth of bot h M-plane and C-plane Mn3Sn thin film\, in which a chiral-spin structure i n the Kagome plane is oriented perpendicular or parallel to the film plane [1]. Using these stacks\, we have shown various interesting phenomena nev er seen in conventional ferromagnets\, including persistent chiral-spin ro tation [2\,3]\, quantum-metric induced nonlinear Hall effect [4]\, and mut ual switching [5].\n\nThe second topic is spintronics with probabilistic d evices\, to be more specific\, stochastic magnetic tunnel junctions (s-MTJ s). Conventional computers made of CMOS circuits are based on deterministi c\, synchronous\, and directional operations. While playing significant ro le in today’s information society\, they have several types of problems that cannot be efficiently addressed. Probabilistic computers with probabi listic bits are expected to be promising to address such complex tasks. We have shown proof-of-concepts of probabilistic computing with s-MTJs\, inc luding combinatorial optimization [6]\, machine learning [7]\, and quantum simulation [8]\, and have also developed understanding and technologies t o enhance the device properties [9-11].\n\nThe first and second topics hav e been carried out in collaboration with Y. Takeuchi\, Y. Sato\, Y. Yamane \, J. Han\, J.-Y. Yoon et al.\, and S. Kanai\, K. Hayakawa\, K. Kobayashi\ , W.A. Borders\, K. Camsari\, D. Datta et al.\, respectively and both topi cs have been supervised by H. Ohno. These works have been partly supported by JSPS Kakenhi\, MEXT X-NICS\, and JST-ASPIRE.\n\n[1] J.-Y. Yoon et al\, Applied Physics Express 13\, 013001 (2020).\n\n[2] Y. Takeuchi et al.\, N ature Materials 20\, 1364 (2021).\n\n[3] Y. Takeuchi et al.\, Science 389\ , 830 (2025).\n\n[4] J. Han et al.\, Nature Physics 20\, 1110 (2024).\n\n[ 5] J.-Y. Yoon et al.\, Nature Communications\, 16\, 1171 (2025).\n\n[6] W. A. Borders et al\, Nature 573\, 390-393 (2019).\n\n[7] J. Kaiser et al.\, Physical Review Applied 17\, 014016 (2022).\n\n[8] A. Grimaldi et al.\, I EDM 2022\; doi: 10.1109/IEDM45625.2022.10019530\n\n[9] K. Hayakawa et al.\ , Physical Review Letters 126\, 117202 (2021).\n\n[10] S. Kanai et al.\, P hysical Review B 103\, 094423 (2021).\n\n[11] K. Kobayashi et al.\, Physic al Review Applied 18\, 054085 (2022).\n\nRoom: 4-A014\, Bldg: Institut Jea n Lamour \, 5 Allee Guinier\, Nancy\, Lorraine\, France\, 54011 LOCATION:Room: 4-A014\, Bldg: Institut Jean Lamour \, 5 Allee Guinier\, Nan cy\, Lorraine\, France\, 54011 ORGANIZER:stephane.mangin@univ-lorraine.fr SEQUENCE:5 SUMMARY:Noncollinear Spintronics and Probabilistic Spintronics URL;VALUE=URI:https://events.vtools.ieee.org/m/559856 X-ALT-DESC:Description: <br /><p class="MsoNormal"><strong><span lang="EN-U S">Biography</span></strong></p>\n<p class="MsoNormal"><span lang="EN-US"> Shunsuke Fukami is a Professor of the Research Institute of Electrical Com munication (RIEC)\, and the director of the Center for Science and Innovat ion in Spintronics (CSIS) of Tohoku University\, Japan. &nbsp\;His areas o f expertise include spintronics physics/materials/devices and their applic ation to integrated circuits and novel-computing hardware.He received his doctor degree in 2012 from Nagoya University. He joined NEC Corporation in 2005 and moved to Tohoku University in 2011. Since 2020\, he has served a s a Full Professor at Tohoku University.</span><span lang="EN-US">&nbsp\;< /span></p>\n<p class="MsoNormal"><strong><span lang="EN-US">Abstract</span ></strong></p>\n<p class="MsoNormal"><span lang="EN-US">In this seminar\, I will discuss two topics studied in Spintronics Laboratory at the Researc h Institute of Electrical Communication in Tohoku University. The first to pic is spintronics with noncollinear antiferromagnet. Noncollinear antifer romagnets\, represented by Mn3Sn\, show intriguing properties similar to f erromagnets such as the anomalous Hall effect\, despite vanishingly small net magnetization. We achieved an epitaxial growth of both M-plane and C-p lane Mn3Sn thin film\, in which a chiral-spin structure in the Kagome plan e is oriented perpendicular or parallel to the film plane [1]. Using these stacks\, we have shown various interesting phenomena never seen in conven tional ferromagnets\, including persistent chiral-spin rotation [2\,3]\, q uantum-metric induced nonlinear Hall effect [4]\, and mutual switching [5] .</span></p>\n<p class="MsoNormal"><span lang="EN-US">The second topic is spintronics with probabilistic devices\, to be more specific\, stochastic magnetic tunnel junctions (s-MTJs). Conventional computers made of CMOS ci rcuits are based on deterministic\, synchronous\, and directional operatio ns. While playing significant role in today&rsquo\;s information society\, they have several types of problems that cannot be efficiently addressed. Probabilistic computers with probabilistic bits are expected to be promis ing to address such complex tasks. We have shown proof-of-concepts of prob abilistic computing with s-MTJs\, including combinatorial optimization [6] \, machine learning [7]\, and quantum simulation [8]\, and have also devel oped understanding and technologies to enhance the device properties [9-11 ]. </span></p>\n<p class="MsoNormal"><span lang="EN-US">The first and seco nd topics have been carried out in collaboration with Y. Takeuchi\, Y. Sat o\, Y. Yamane\, J. Han\, J.-Y. Yoon et al.\, and S. Kanai\, K. Hayakawa\, K. Kobayashi\, W.A. Borders\, K. Camsari\, D. Datta et al.\, respectively and both topics have been supervised by H. Ohno. These works have been par tly supported by JSPS Kakenhi\, MEXT X-NICS\, and JST-ASPIRE.</span></p>\n <p class="MsoNormal"><span lang="EN-US">&nbsp\;</span></p>\n<p class="MsoN ormal"><span lang="EN-US">[1]&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nb sp\; J.-Y. Yoon et al\, Applied Physics Express 13\, 013001 (2020).</span> </p>\n<p class="MsoNormal"><span lang="EN-US">[2]&nbsp\;&nbsp\;&nbsp\;&nbs p\;&nbsp\;&nbsp\;&nbsp\; Y. Takeuchi et al.\, Nature Materials 20\, 1364 ( 2021).</span></p>\n<p class="MsoNormal"><span lang="EN-US">[3]&nbsp\;&nbsp \;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\; Y. Takeuchi et al.\, Science 389\, 8 30 (2025).</span></p>\n<p class="MsoNormal"><span lang="EN-US">[4]&nbsp\;& nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\; J. Han et al.\, Nature Physics 2 0\, 1110 (2024).</span></p>\n<p class="MsoNormal">[5]&nbsp\;&nbsp\;&nbsp\; &nbsp\;&nbsp\;&nbsp\;&nbsp\; J.-Y. Yoon et al.\, Nature Communications\, 1 6\, 1171 (2025).</p>\n<p class="MsoNormal">[6]&nbsp\;&nbsp\;&nbsp\;&nbsp\; &nbsp\;&nbsp\;&nbsp\; W. A. Borders et al\, Nature 573\, 390-393 (2019).</ p>\n<p class="MsoNormal">[7]&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbs p\; J. Kaiser et al.\, Physical Review Applied 17\, 014016 (2022).</p>\n<p class="MsoNormal">[8]&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\; A. Grimaldi et al.\, IEDM 2022\; doi: 10.1109/IEDM45625.2022.10019530</p>\n< p class="MsoNormal">[9]&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\; K . Hayakawa et al.\, Physical Review Letters 126\, 117202 (2021).</p>\n<p c lass="MsoNormal"><span lang="EN-US">[10]&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\ ;&nbsp\; S. Kanai et al.\, Physical Review B 103\, 094423 (2021).</span></ p>\n<p class="MsoNormal"><span lang="EN-US">[11]&nbsp\;&nbsp\;&nbsp\;&nbsp \;&nbsp\;&nbsp\; K. Kobayashi et al.\, Physical Review Applied 18\, 054085 (2022).</span></p>\n<p class="MsoNormal"><span lang="EN-US">&nbsp\;</span ></p>\n<p class="MsoNormal">&nbsp\;</p> END:VEVENT END:VCALENDAR