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PRODID:IEEE vTools.Events//EN
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TZID:America/Phoenix
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DTSTART:19671029T010000
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BEGIN:VEVENT
DTSTAMP:20260615T163221Z
UID:235BFD8C-82DB-4621-B37D-DB349DD22715
DTSTART;TZID=America/Phoenix:20260814T130000
DTEND;TZID=America/Phoenix:20260814T140000
DESCRIPTION:Three-dimensional NAND flash memory has become a cornerstone of
  modern data storage\, powering everything from mobile devices to hypersca
 le data centers fueling the AI revolution. As the industry pushes toward b
 oth higher storage density through aggressive\nvertical scaling and faster
  operation to meet the demands of next-generation highperformance SSDs\, l
 ow-latency AI/ML workloads\, and real-time data-intensive applications\, t
 he challenges of maintaining robust device reliability grow increasingly c
 omplex. This talk provides an industry perspective on the co-evolution of 
 3D NAND density and performance\, covering advances in cell architecture a
 nd scaling strategies alongside the reliability challenges that arise when
  optimizing for both capacity and speed. The presentation will also share 
 practical insights on working as an engineer in the semiconductor memory i
 ndustry and the career path from academia to industry\, aimed at students 
 and young professionals entering the field\n\nSpeaker(s): Zhongyuan John\,
  \n\nVirtual: https://events.vtools.ieee.org/m/562206
LOCATION:Virtual: https://events.vtools.ieee.org/m/562206
ORGANIZER:daphnechen@asu.edu
SEQUENCE:31
SUMMARY:From Physics to Flash: An Industry Perspective on 3D NAND Technolog
 y\, Reliability\, and High-Performance SSDs
URL;VALUE=URI:https://events.vtools.ieee.org/m/562206
X-ALT-DESC:Description: <br /><p>Three-dimensional NAND flash memory has be
 come a cornerstone of modern data storage\, powering everything from mobil
 e devices to hyperscale data centers fueling the AI revolution. As the ind
 ustry pushes toward both higher storage density through aggressive&nbsp\;<
 br>vertical scaling and faster operation to meet the demands of next-gener
 ation highperformance SSDs\, low-latency AI/ML workloads\, and real-time 
 data-intensive applications\, the challenges of maintaining robust device 
 reliability grow increasingly complex. This talk provides an industry pers
 pective on the co-evolution of 3D NAND density and performance\, covering 
 advances in cell architecture and scaling strategies alongside the reliabi
 lity challenges that arise when optimizing for both capacity and speed. Th
 e presentation will also share practical insights on working as an enginee
 r in the semiconductor memory industry and the career path from academia t
 o industry\, aimed at students and young professionals entering the field<
 /p>
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