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TZID:America/Mexico_City
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DTSTART:20221030T010000
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DTSTAMP:20260622T223443Z
UID:A43CD22B-13E6-495A-97E8-BC871B5CCD3A
DTSTART;TZID=America/Mexico_City:20260616T120000
DTEND;TZID=America/Mexico_City:20260616T133000
DESCRIPTION:Two-dimensional (2D) materials have emerged as promising candid
 ates for future nanoelectronic and optoelectronic technologies due to thei
 r unique and highly tunable electronic properties. Understanding the role 
 of defects\, oxidation mechanisms\, and interfacial phenomena is essential
  for optimizing the performance of devices based on these materials.\n\nIn
  this seminar\, Dr. Santosh KC will present recent advances in the computa
 tional study of transition metal dichalcogenides (TMDs)\, focusing on surf
 ace defects\, oxidation processes\, semiconductor–dielectric interfaces\
 , and semiconductor–metal contacts. The talk will highlight how atomic-s
 cale modeling provides valuable insights into the electronic behavior of t
 hese systems and supports the development of next-generation semiconductor
  technologies.\n\nThe seminar will also discuss emerging two-dimensional m
 agnetic materials and the importance of van der Waals interactions in accu
 rately describing their atomic and magnetic properties.\n\nKey topics:\n\n
 - Surface defects and oxidation in 2D materials\n- Semiconductor–dielect
 ric and semiconductor–metal interfaces\n- Electronic properties of trans
 ition metal dichalcogenides (TMDs)\n- Atomic-scale computational modeling\
 n- Emerging 2D magnetic materials\n- Applications in nanoelectronics and o
 ptoelectronics\n\nCo-sponsored by: Centro de Investigación y de Estudios 
 Avanzados del Instituto Politécnico Nacional (Cinvestav-IPN)\n\nSpeaker(s
 ): Dr. Santosh KC\n\nAgenda: \nAGENDA\n\n🤖12:00 PM – 12:05 PM\nWelcom
 e and Opening Remarks\nIEEE EDS Student Chapters IPN &amp; CINVESTAV\n\n12:05 
 PM – 12:10 PM\nSpeaker Introduction\n\n12:10 PM – 12:50 PM\nTechnical 
 Seminar\nSurface and Interface Properties of 2D Materials\nDr. Santosh KC\
 nSan Diego State University\n\n☕12:50 PM – 1:00 PM\nQ&amp;A Session and Cl
 osing Remarks\n\nBldg: Auditorio de Ingeniería Eléctrica\, Av Instituto 
 Politécnico Nacional 2508\, San Pedro Zacatenco\, Gustavo A. Madero\, Ciu
 dad de México\, Distrito Federal\, Mexico\, 07360
LOCATION:Bldg: Auditorio de Ingeniería Eléctrica\, Av Instituto Politécn
 ico Nacional 2508\, San Pedro Zacatenco\, Gustavo A. Madero\, Ciudad de M
 éxico\, Distrito Federal\, Mexico\, 07360
ORGANIZER:a.abilene.gs@ieee.org
SEQUENCE:16
SUMMARY:EDS Research Seminar Series 2026 – Session 1: Surface and Interfa
 ce Properties of 2D Materials
URL;VALUE=URI:https://events.vtools.ieee.org/m/563511
X-ALT-DESC:Description: &lt;br /&gt;&lt;p data-start=&quot;772&quot; data-end=&quot;1123&quot;&gt;Two-dimen
 sional (2D) materials have emerged as promising candidates for future nano
 electronic and optoelectronic technologies due to their unique and highly 
 tunable electronic properties. Understanding the role of defects\, oxidati
 on mechanisms\, and interfacial phenomena is essential for optimizing the 
 performance of devices based on these materials.&lt;/p&gt;\n&lt;p data-start=&quot;1125&quot;
  data-end=&quot;1580&quot;&gt;In this seminar\, &lt;strong data-start=&quot;1142&quot; data-end=&quot;116
 0&quot;&gt;Dr. Santosh KC&lt;/strong&gt; will present recent advances in the computation
 al study of transition metal dichalcogenides (TMDs)\, focusing on surface 
 defects\, oxidation processes\, semiconductor&amp;ndash\;dielectric interfaces
 \, and semiconductor&amp;ndash\;metal contacts. The talk will highlight how at
 omic-scale modeling provides valuable insights into the electronic behavio
 r of these systems and supports the development of next-generation semicon
 ductor technologies.&lt;/p&gt;\n&lt;p data-start=&quot;1582&quot; data-end=&quot;1767&quot;&gt;The seminar
  will also discuss emerging two-dimensional magnetic materials and the imp
 ortance of van der Waals interactions in accurately describing their atomi
 c and magnetic properties.&lt;/p&gt;\n&lt;p data-start=&quot;1769&quot; data-end=&quot;1784&quot;&gt;&lt;stro
 ng data-start=&quot;1769&quot; data-end=&quot;1784&quot;&gt;Key topics:&lt;/strong&gt;&lt;/p&gt;\n&lt;ul data-st
 art=&quot;1785&quot; data-end=&quot;2086&quot;&gt;\n&lt;li data-section-id=&quot;106bh9a&quot; data-start=&quot;178
 5&quot; data-end=&quot;1832&quot;&gt;Surface defects and oxidation in 2D materials&lt;/li&gt;\n&lt;li
  data-section-id=&quot;c4mvsa&quot; data-start=&quot;1833&quot; data-end=&quot;1894&quot;&gt;Semiconductor&amp;
 ndash\;dielectric and semiconductor&amp;ndash\;metal interfaces&lt;/li&gt;\n&lt;li data
 -section-id=&quot;7wg41v&quot; data-start=&quot;1895&quot; data-end=&quot;1961&quot;&gt;Electronic properti
 es of transition metal dichalcogenides (TMDs)&lt;/li&gt;\n&lt;li data-section-id=&quot;y
 urryn&quot; data-start=&quot;1962&quot; data-end=&quot;1999&quot;&gt;Atomic-scale computational modeli
 ng&lt;/li&gt;\n&lt;li data-section-id=&quot;1dnhops&quot; data-start=&quot;2000&quot; data-end=&quot;2032&quot;&gt;E
 merging 2D magnetic materials&lt;/li&gt;\n&lt;li data-section-id=&quot;7dckxz&quot; data-star
 t=&quot;2033&quot; data-end=&quot;2086&quot;&gt;Applications in nanoelectronics and optoelectroni
 cs&lt;/li&gt;\n&lt;/ul&gt;&lt;br /&gt;&lt;br /&gt;Agenda: &lt;br /&gt;&lt;p&gt;&lt;strong&gt;AGENDA&lt;/strong&gt;&lt;/p&gt;\n&lt;p
 &gt;&lt;strong&gt;🤖12:00 PM &amp;ndash\; 12:05 PM&lt;/strong&gt;&lt;br&gt;Welcome and Opening Re
 marks&lt;br&gt;IEEE EDS Student Chapters IPN &amp;amp\; CINVESTAV&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;12
 :05 PM &amp;ndash\; 12:10 PM&lt;/strong&gt;&lt;br&gt;Speaker Introduction&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;
 12:10 PM &amp;ndash\; 12:50 PM&lt;/strong&gt;&lt;br&gt;Technical Seminar&lt;br&gt;Surface and In
 terface Properties of 2D Materials&lt;br&gt;Dr. Santosh KC&lt;br&gt;San Diego State Un
 iversity&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;☕12:50 PM &amp;ndash\; 1:00 PM&lt;/strong&gt;&lt;br&gt;Q&amp;amp\;A
  Session and Closing Remarks&lt;/p&gt;
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