BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Europe/Paris BEGIN:DAYLIGHT DTSTART:20260329T030000 TZOFFSETFROM:+0100 TZOFFSETTO:+0200 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=3 TZNAME:CEST END:DAYLIGHT BEGIN:STANDARD DTSTART:20261025T020000 TZOFFSETFROM:+0200 TZOFFSETTO:+0100 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=10 TZNAME:CET END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20260613T103407Z UID:96CED8D7-E912-4948-B0D4-4163F874626A DTSTART;TZID=Europe/Paris:20260617T140000 DTEND;TZID=Europe/Paris:20260617T150000 DESCRIPTION:Biography\n\nTeruo Ono received the B.S.\, M.S.\, and D.Sc. deg rees from Kyoto University in 1991\, 1993\, and 1996\, respectively. After a one year stay as a postdoctoral associate at Kyoto University\, he move d to Keio University where he became an assistant professor. In 2000\, he moved to Osaka University where he became a lecturer and an associate prof essor. Since 2004\, he has been working at Kyoto University\, where he is now a professor. He has published over 280 technical articles in peer-revi ewed journals\, including book chapters and review articles\, and has give n more than 90 invited presentations at international conferences. He serv ed as conference co-chair of the 8th International Symposium on Metallic M ultilayers (MML) in 2013\, and on the program committees of various intern ational conferences on magnetism and spintronics.\n\nAbstract\n\nRacetrack memory using domain wall (DW) motion in ferromagnetic nanowires is a pote ntial candidate for future memory technologies [1]. However\, there are st ill problems that hamper the commercialization. First\, lowering consumpti on power is crucial for practical application. Second\, a precise control of DW position is a problem to be solved. Smaller DW width is preferable f or higher density memory. Here\, we propose a new type of 3D DW motion mem ory with an artificial ferromagnet and study its feasibility by micromagne tic simulation.\n\n3D DW motion memory proposed in this study consists of an array of cylindrical artificial ferromagnetic wires\, which is composed of periodically stacked bilayers of a bit layer with strong magnetic anis otropy and a DW layer with no magnetic anisotropy [2]. The data is written by flipping the magnetization of the bottom bit layer using the spin-orbi t torque induced by the current in the word line. The written data can be shifted to the arbitrary position in the artificial magnetic wire by the a ppropriate current injection through the wire. By repeating the writing an d shifting\, an arbitrary information sequence can be stored in the magnet ic wire. The data can be read out with the topmost magnetic tunnel junctio n while the data is being shifted by the current through the wire. Microma gnetic simulation shows that the precise DW position controllability\, nar row DW width down to 3 nm\, and low DW motion current down to 2 × 1010 A/ m2 can be achieved with feasible material parameters [2]. Furthermore\, it is found that the high thermal stability and the low DW motion current ca n be achieved simultaneously [3]. Data-writing and shifting processes for 2-bits memory have been demonstrated [4]. Although the originally proposed method for reading information from this device is destructive\, we propo sed a novel nondestructive readout method\, leveraging the magnetization d ynamics induced by the spin transfer torque [5].\n\nThis work was partly s upported by JST\, CREST (Grant Number JP MJCR21C1)\, Japan.\n\n[1] S. Park in\, M. Hayashi\, and L. Thomas\, Science\, 320\, 190 (2008).\n\n[2] Y. M. Hung et al.\, J. Magn. Soc. Jpn. 45\, 6 (2021).\n\n[3] Y. M. Hung et al.\ , Appl. Phys. Express 14\, 023001 (2021).\n\n[4] F. Ye et al.\,IEEE Transa ctions on Magnetics\; 10.1109/TMAG.2025.3556016H.\n\n[5] Jang et al.\, J. Magn. Soc. Jpn.\, 49\, 9-12 (2025).\n\nRoom: 4-A014\, Bldg: institut Jean Lamour \, 2 allée André Guinier\, 54011 Nancy\, Nancy\, Lorraine\, Franc e\, 54011 LOCATION:Room: 4-A014\, Bldg: institut Jean Lamour \, 2 allée André Guini er\, 54011 Nancy\, Nancy\, Lorraine\, France\, 54011 ORGANIZER:stephane.mangin@univ-lorraine.fr SEQUENCE:10 SUMMARY:3D domain wall motion memory with artificial ferromagnet URL;VALUE=URI:https://events.vtools.ieee.org/m/563585 X-ALT-DESC:Description: <br /><p class="MsoNormal"><strong><span lang="EN-U S">Biography</span></strong></p>\n<p class="MsoNormal">&nbsp\;</p>\n<p cla ss="MsoNormal"><span lang="EN-US">Teruo Ono received the B.S.\, M.S.\, and D.Sc. degrees from Kyoto University in 1991\, 1993\, and 1996\, respectiv ely. After a one year stay as a postdoctoral associate at Kyoto University \, he moved to Keio University where he became an assistant professor. In 2000\, he moved to Osaka University where he became a lecturer and an asso ciate professor. Since 2004\, he has been working at Kyoto University\, wh ere he is now a professor. He has published over 280 technical articles in peer-reviewed journals\, including book chapters and review articles\, an d has given more than 90 invited presentations at international conference s. He served as conference co-chair of the 8th International Symposium on Metallic Multilayers (MML) in 2013\, and on the program committees of vari ous international conferences on magnetism and spintronics.</span></p>\n<p class="MsoNormal"><strong><span lang="EN-US">&nbsp\;</span></strong></p>\ n<p class="MsoNormal"><strong><span lang="EN-US">Abstract</span></strong>< /p>\n<p class="MsoNormal"><span lang="EN-US">Racetrack memory using domain wall (DW) motion in ferromagnetic nanowires is a potential candidate for future memory technologies [1]. However\, there are still problems that ha mper the commercialization. First\, lowering consumption power is crucial for practical application. Second\, a precise control of DW position is a problem to be solved. Smaller DW width is preferable for higher density me mory. Here\, we propose a new type of 3D DW motion memory with an artifici al ferromagnet and study its feasibility by micromagnetic simulation.&nbsp \; </span></p>\n<p class="MsoNormal"><span lang="EN-US">3D DW motion memor y proposed in this study consists of an array of cylindrical artificial fe rromagnetic wires\, which is composed of periodically stacked bilayers of a bit layer with strong magnetic anisotropy and a DW layer with no magneti c anisotropy [2]. The data is written by flipping the magnetization of the bottom bit layer using the spin-orbit torque induced by the current in th e word line. The written data can be shifted to the arbitrary position in the artificial magnetic wire by the appropriate current injection through the wire. By repeating the writing and shifting\, an arbitrary information sequence can be stored in the magnetic wire. The data can be read out wit h the topmost magnetic tunnel junction while the data is being shifted by the current through the wire. Micromagnetic simulation shows that the prec ise DW position controllability\, narrow DW width down to 3 nm\, and low D W motion current down to 2 &times\; 1010 A/m2 can be achieved with feasibl e material parameters [2]. Furthermore\, it is found that the high thermal stability and the low DW motion current can be achieved simultaneously [3 ]. Data-writing and shifting processes for 2-bits memory have been demonst rated [4]. Although the originally proposed method for reading information from this device is destructive\, we proposed a novel nondestructive read out method\, leveraging the magnetization dynamics induced by the spin tra nsfer torque [5].</span></p>\n<p class="MsoNormal"><span lang="EN-US">This work was partly supported by JST\, CREST (Grant Number JP MJCR21C1)\, Jap an.</span></p>\n<p class="MsoNormal"><span lang="EN-US">&nbsp\;</span></p> \n<p class="MsoNormal"><span lang="EN-US">[1] S. Parkin\, M. Hayashi\, and L. Thomas\, Science\, 320\, 190 (2008).</span></p>\n<p class="MsoNormal"> [2] Y. M. Hung et al.\, J. Magn. Soc. Jpn. 45\, 6 (2021).</p>\n<p class="M soNormal">[3] Y. M. Hung et al.\, Appl. Phys. Express 14\, 023001 (2021).< /p>\n<p class="MsoNormal">[4] F. Ye et al.\,IEEE Transactions on Magnetics \; 10.1109/TMAG.2025.3556016H.</p>\n<p class="MsoNormal">[5] Jang et al.\, J. Magn. Soc. Jpn.\, 49\, 9-12 (2025).</p> END:VEVENT END:VCALENDAR