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TZOFFSETFROM:-0800
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RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3
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BEGIN:STANDARD
DTSTART:20261101T010000
TZOFFSETFROM:-0700
TZOFFSETTO:-0800
RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11
TZNAME:PST
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
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UID:AEE57B9B-12CF-4FF8-A339-E5528AEA04BF
DTSTART;TZID=America/Los_Angeles:20261013T183000
DTEND;TZID=America/Los_Angeles:20261013T200000
DESCRIPTION:[]\n\nAs part of the celebration of the 100th anniversary of th
 e field-effect transistor\, the IEEE Electron Devices Society (EDS) Foothi
 ll Chapter is honored to welcome Professor Larry Cheng from Oregon State U
 niversity for a seminar on one of the most exciting emerging directions in
  semiconductor devices—phototransistor memory.\n\nPhototransistors have 
 long served as highly sensitive light detectors. Today\, advances in semic
 onductor materials and device physics are enabling these devices to integr
 ate sensing\, memory\, and computation within a single platform. In this s
 eminar\, Professor Cheng will introduce the operating principles of hybrid
  organic-oxide phototransistors and discuss recent advances in programmabl
 e phototransistor memories with tunable retention\, adaptive forgetting\, 
 and neuromorphic functionalities. He will also highlight how these innovat
 ions are opening new opportunities for in-sensor intelligence and next-gen
 eration computing architectures.\n\nWhether your interests are in semicond
 uctor devices\, materials engineering\, AI hardware\, or emerging computin
 g technologies\, this seminar offers an excellent opportunity to learn abo
 ut a rapidly evolving research frontier from a leading expert in the field
 .\n\nSpeaker(s): Prof. Larry Cheng\n\nAgenda: \nSeminar Title: Phototransi
 stor Memory: Materials\, Device Physics\, and In-Sensor Processing\n\nSpea
 ker: Larry Cheng\, Ph.D.\n\nPhototransistors have traditionally been devel
 oped as highly sensitive light detectors. This talk will discuss how advan
 ces in materials engineering and semiconductor device physics are expandin
 g their potential functions beyond photodetection to include sensing\, mem
 ory\, and basic information processing. Professor Cheng will first discuss
  the physical mechanisms governing the operation and memory behavior of hy
 brid organic–oxide phototransistors. He will then present recent advance
 s in programmable phototransistor memories\, in which electrical control o
 f trapped charge enables tunable memory retention\, adaptive forgetting\, 
 and selected neuromodulator-inspired functions. Finally\, he will discuss 
 the potential use of these device capabilities for in-sensor and temporal 
 information processing by taking advantage of programmable physical dynami
 cs.\n\nThis seminar will provide students\, researchers\, and industry pro
 fessionals with an overview of the connections among semiconductor materia
 ls\, device physics\, intelligent sensing\, and emerging computing technol
 ogies. Attendees will gain a better understanding of how phototransistor m
 emory may contribute to future sensing and neuromorphic computing systems.
 \n\nFormat:\n\n-\nTalk: ~40 minutes\n\n-\nQ&amp;A and Discussion: ~15 minutes\
 n\nReferences:\n\n[Techxplore.com: Brain-inspired phototransistor could cu
 t AI energy use by sensing and storing data](https://techxplore.com/news/2
 026-06-brain-phototransistor-ai-energy.html)\n\nAdvanced Functional Materi
 als\, doi.org/10.1002/adfm.75942\n\nAdvanced Optical Materials\, doi.org/1
 0.1002/adom.202500081\n\nJournal of Materials Chemistry C\, doi.org/10.103
 9/d5tc04439a\n\nVirtual: https://events.vtools.ieee.org/m/566556
LOCATION:Virtual: https://events.vtools.ieee.org/m/566556
ORGANIZER:richard.fung@ieee.org
SEQUENCE:138
SUMMARY:IEEE EDS 100 Years of the FET Series | Phototransistor Memory: Mate
 rials\, Device Physics\, and In-Sensor Processing
URL;VALUE=URI:https://events.vtools.ieee.org/m/566556
X-ALT-DESC:Description: &lt;br /&gt;&lt;p style=&quot;line-height: 1.3\; text-align: left
 \;&quot;&gt;&lt;span style=&quot;font-size: 18pt\;&quot;&gt;&lt;img style=&quot;float: left\; margin: 15px
 \;&quot; src=&quot;https://scx2.b-cdn.net/gfx/news/hires/2026/new-digital-memory-dev
 .jpg? s=612x612&amp;amp\;w=0&amp;amp\;k=20&amp;amp\;c=qsAwchQa1ExewNpHaaxUAElBSXs6f9u8
 1QyMSjjW7Xc=&quot; alt=&quot;&quot; width=&quot;318&quot; height=&quot;318&quot;&gt;&lt;/span&gt;&lt;/p&gt;\n&lt;p class=&quot;isSel
 ectedEnd&quot;&gt;As part of the celebration of the 100th anniversary of the field
 -effect transistor\, the IEEE Electron Devices Society (EDS) Foothill Chap
 ter is honored to welcome &lt;strong&gt;Professor Larry Cheng&lt;/strong&gt; from &lt;str
 ong&gt;Oregon State University&lt;/strong&gt; for a seminar on one of the most exci
 ting emerging directions in semiconductor devices&amp;mdash\;phototransistor m
 emory.&lt;/p&gt;\n&lt;p class=&quot;isSelectedEnd&quot;&gt;Phototransistors have long served as 
 highly sensitive light detectors. Today\, advances in semiconductor materi
 als and device physics are enabling these devices to integrate sensing\, m
 emory\, and computation within a single platform. In this seminar\, Profes
 sor Cheng will introduce the operating principles of hybrid organic-oxide 
 phototransistors and discuss recent advances in programmable phototransist
 or memories with tunable retention\, adaptive forgetting\, and neuromorphi
 c functionalities. He will also highlight how these innovations are openin
 g new opportunities for in-sensor intelligence and next-generation computi
 ng architectures.&lt;/p&gt;\n&lt;p&gt;Whether your interests are in semiconductor devi
 ces\, materials engineering\, AI hardware\, or emerging computing technolo
 gies\, this seminar offers an excellent opportunity to learn about a rapid
 ly evolving research frontier from a leading expert in the field.&lt;/p&gt;\n&lt;p 
 style=&quot;line-height: 1.3\; text-align: left\;&quot;&gt;&lt;span style=&quot;font-size: 18pt
 \;&quot;&gt;&amp;nbsp\;&lt;/span&gt;&lt;/p&gt;&lt;br /&gt;&lt;br /&gt;Agenda: &lt;br /&gt;&lt;div dir=&quot;auto&quot;&gt;\n&lt;p class
 =&quot;p1&quot;&gt;&lt;span style=&quot;font-family: arial\, helvetica\, sans-serif\; font-size
 : 14pt\;&quot;&gt;Seminar Title: Phototransistor Memory: Materials\, Device Physic
 s\, and In-Sensor Processing&lt;/span&gt;&lt;/p&gt;\n&lt;p&gt;&lt;span style=&quot;font-size: 12pt\;
  font-family: arial\, helvetica\, sans-serif\;&quot;&gt;Speaker: Larry Cheng\, Ph.
 D.&lt;/span&gt;&lt;/p&gt;\n&lt;p style=&quot;text-align: justify\;&quot;&gt;Phototransistors have trad
 itionally been developed as highly sensitive light detectors. This talk wi
 ll discuss how advances in materials engineering and semiconductor device 
 physics are expanding their potential functions beyond photodetection to i
 nclude sensing\, memory\, and basic information processing. Professor Chen
 g will first discuss the physical mechanisms governing the operation and m
 emory behavior of hybrid organic&amp;ndash\;oxide phototransistors. He will th
 en present recent advances in programmable phototransistor memories\, in w
 hich electrical control of trapped charge enables tunable memory retention
 \, adaptive forgetting\, and selected neuromodulator-inspired functions. F
 inally\, he will discuss the potential use of these device capabilities fo
 r in-sensor and temporal information processing by taking advantage of pro
 grammable physical dynamics.&lt;/p&gt;\n&lt;p style=&quot;text-align: justify\;&quot;&gt;This se
 minar will provide students\, researchers\, and industry professionals wit
 h an overview of the connections among semiconductor materials\, device ph
 ysics\, intelligent sensing\, and emerging computing technologies. Attende
 es will gain a better understanding of how phototransistor memory may cont
 ribute to future sensing and neuromorphic computing systems.&lt;/p&gt;\n&lt;p class
 =&quot;&quot; data-start=&quot;749&quot; data-end=&quot;762&quot;&gt;&lt;span style=&quot;font-size: 12pt\; font-fa
 mily: arial\, helvetica\, sans-serif\;&quot;&gt;Format:&lt;/span&gt;&lt;/p&gt;\n&lt;ul data-start
 =&quot;763&quot; data-end=&quot;831&quot;&gt;\n&lt;li class=&quot;&quot; style=&quot;font-size: 12pt\; font-family:
  arial\, helvetica\, sans-serif\;&quot; data-start=&quot;763&quot; data-end=&quot;788&quot;&gt;\n&lt;p cl
 ass=&quot;&quot; data-start=&quot;765&quot; data-end=&quot;788&quot;&gt;&lt;span style=&quot;font-size: 12pt\; font
 -family: arial\, helvetica\, sans-serif\;&quot;&gt;Talk: ~40 minutes&lt;/span&gt;&lt;/p&gt;\n&lt;
 /li&gt;\n&lt;li class=&quot;&quot; style=&quot;font-size: 12pt\; font-family: arial\, helvetica
 \, sans-serif\;&quot; data-start=&quot;789&quot; data-end=&quot;831&quot;&gt;\n&lt;p class=&quot;&quot; data-start=
 &quot;791&quot; data-end=&quot;831&quot;&gt;&lt;span style=&quot;font-size: 12pt\; font-family: arial\, h
 elvetica\, sans-serif\;&quot;&gt;Q&amp;amp\;A and Discussion: ~15 minutes&lt;/span&gt;&lt;/p&gt;\n
 &lt;/li&gt;\n&lt;/ul&gt;\n&lt;p dir=&quot;ltr&quot;&gt;&amp;nbsp\;&lt;/p&gt;\n&lt;p dir=&quot;ltr&quot; style=&quot;line-height: 1
 \;&quot;&gt;&lt;span style=&quot;font-family: arial\, helvetica\, sans-serif\; font-size: 
 12pt\;&quot;&gt;References:&lt;/span&gt;&lt;/p&gt;\n&lt;p dir=&quot;ltr&quot; style=&quot;line-height: 1\;&quot;&gt;&lt;a h
 ref=&quot;https://techxplore.com/news/2026-06-brain-phototransistor-ai-energy.h
 tml&quot; target=&quot;_blank&quot; rel=&quot;noopener&quot;&gt;Techxplore.com: Brain-inspired phototr
 ansistor could cut AI energy use by sensing and storing data&lt;/a&gt;&lt;/p&gt;\n&lt;p d
 ir=&quot;ltr&quot; style=&quot;line-height: 1\;&quot;&gt;&lt;span style=&quot;font-family: arial\, helvet
 ica\, sans-serif\; font-size: 12pt\;&quot;&gt;Advanced Functional Materials\,&amp;nbsp
 \; &lt;a href=&quot;http://doi.org/10.1002/adfm.75942&quot; target=&quot;_blank&quot; rel=&quot;noopen
 er&quot;&gt;doi.org/10.1002/adfm.75942&lt;/a&gt;&lt;/span&gt;&lt;/p&gt;\n&lt;p dir=&quot;ltr&quot; style=&quot;line-he
 ight: 1\;&quot;&gt;&lt;span style=&quot;font-family: arial\, helvetica\, sans-serif\; font
 -size: 12pt\;&quot;&gt;Advanced Optical Materials\, &lt;a href=&quot;http://doi.org/10.100
 2/adom.202500081&quot; target=&quot;_blank&quot; rel=&quot;noopener&quot;&gt;doi.org/10.1002/adom.2025
 00081&lt;/a&gt;&lt;/span&gt;&lt;/p&gt;\n&lt;p dir=&quot;ltr&quot; style=&quot;line-height: 1\;&quot;&gt;&lt;span style=&quot;f
 ont-family: arial\, helvetica\, sans-serif\; font-size: 12pt\;&quot;&gt;Journal of
  Materials Chemistry C\, &lt;a href=&quot;http://doi.org/10.1039/d5tc04439a&quot; targe
 t=&quot;_blank&quot; rel=&quot;noopener&quot;&gt;doi.org/10.1039/d5tc04439a&lt;/a&gt;&lt;/span&gt;&lt;/p&gt;\n&lt;/div
 &gt;
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