BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Asia/Kolkata BEGIN:STANDARD DTSTART:19451014T230000 TZOFFSETFROM:+0630 TZOFFSETTO:+0530 TZNAME:IST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20260721T171651Z UID:D17B2A75-8D5E-423D-97BA-E992633A7B14 DTSTART;TZID=Asia/Kolkata:20260725T150000 DTEND;TZID=Asia/Kolkata:20260725T160000 DESCRIPTION:Event Details: IEEE Industrial Electronics Society (IES) Chapte r - Technical Talk on Wide Bandgap Semiconductor-Based Power Electronics S ystems in Electric Vehicles by Dr. Naresh Kumar Pilli\, Staff Application Engineer – Power\, SEMTECH Corporation (USA)\, Hyderabad Center\, on 25t h July 2026 / 3:00 pm to 4:00 pm\n\nAbstract: The rapid electrification of the transportation sector has intensified the demand for high-efficiency\ , high-power-density\, and safety-critical power electronic systems in ele ctric vehicles (EVs). Conventional silicon (Si) devices are approaching th eir fundamental material limits — constrained by low bandgap\, high swit ching losses\, and thermal ceilings around 175°C. Wide bandgap (WBG) semi conductors\, particularly Silicon Carbide (SiC) and Gallium Nitride (GaN)\ , have emerged as transformative technologies\, offering 3–4× wider ban dgap\, up to 20× higher breakdown field\, and\nsuperior thermal performan ce. This talk examines the role of WBG devices across EV traction inverter s\, onboard chargers\, and DC-DC converters\, alongside the 800V architect ure revolution enabling 98% inverter efficiency\nand sub-20-minute chargin g. Critical challenges are addressed — gate driving complexity\, reliabi lity trade-offs\, and ISO 26262 functional safety requirements including t orque control\, thermal protection\, and electric insulation — along wit h power electronic circuit-level design mandates and future WBG trends.\n\ nBiography:\n\nDr. Naresh Kumar Pilli is a Staff Application Engineer (Pow er) at Semtech in Hyderabad\, working on the design and modelling of power -management ICs. He holds a Ph.D. in Power Electronics from IIT (BHU) Vara nasi and brings over five years of post-doctoral industry experience acros s gate-driver and traction-inverter development at Bosch\, and high-power converter research at the University of Nottingham for Rolls-Royce aerospa ce. His interests span SiC/GaN power devices\, gate-driver architectures\, and automotive functional safety.\n\nRegistrations are limited.\n\nRegist ration Fees details:\n\nFor IEEE Participants - Nil\n\nFor Non-IEEE Partic ipants who submit the registration form will receive a payment link/QR cod e by email. A confirmation email will be sent upon receipt of the ₹300 r egistration fee.\n\nFor Queries contact:\nIEEE Members: Dr PV Rajgopal\, I ES Chapter Vice Chair\, 9985306562\nNon-IEEE Members: Dr. D. Hari Krishna\ , IES Chapter Secretary\, 9490215195\n\nSpeaker(s): Dr. Naresh Kumar Pilli \, \n\nBHEL/ Corporate R&D Unit\, Vikas Nagar (Near Balanagar)\, Hyderabad \, Telengana\, India\, 500042 LOCATION:BHEL/ Corporate R&D Unit\, Vikas Nagar (Near Balanagar)\, Hyderaba d\, Telengana\, India\, 500042 ORGANIZER:harikrishna_eee@mvsrec.edu.in SEQUENCE:118 SUMMARY:Technical Talk on Wide Bandgap Semiconductor-Based Power Electronic s Systems in Electric Vehicles URL;VALUE=URI:https://events.vtools.ieee.org/m/568092 X-ALT-DESC:Description: <br /><p style="text-align: justify\;"><strong>Even t Details: </strong>IEEE Industrial Electronics Society (IES) Chapter - Te chnical Talk on Wide Bandgap Semiconductor-Based Power Electronics Systems in Electric Vehicles by Dr. Naresh Kumar Pilli\, Staff Application Engine er &ndash\; Power\, SEMTECH Corporation (USA)\, Hyderabad Center\, on 25th July 2026 / 3:00 pm to 4:00 pm</p>\n<p style="text-align: justify\;"><str ong>Abstract:&nbsp\;</strong>The rapid electrification of the transportati on sector has intensified the demand for high-efficiency\, high-power-dens ity\, and safety-critical power electronic systems in electric vehicles (E Vs). Conventional silicon (Si) devices are approaching their fundamental m aterial limits &mdash\; constrained by low bandgap\, high switching losses \, and thermal ceilings around 175&deg\;C. Wide bandgap (WBG) semiconducto rs\, particularly Silicon Carbide (SiC) and Gallium Nitride (GaN)\, have e merged as transformative technologies\, offering 3&ndash\;4&times\; wider bandgap\, up to 20&times\; higher breakdown field\, and<br>superior therma l performance. This talk examines the role of WBG devices across EV tracti on inverters\, onboard chargers\, and DC-DC converters\, alongside the 800 V architecture revolution enabling 98% inverter efficiency<br>and sub-20-m inute charging. Critical challenges are addressed &mdash\; gate driving co mplexity\, reliability trade-offs\, and ISO 26262 functional safety requir ements including torque control\, thermal protection\, and electric insula tion &mdash\; along with power electronic circuit-level design&nbsp\; &nbs p\;mandates and future WBG trends.</p>\n<p><strong><span class="sublabel"> Biography:</span></strong></p>\n<p><span lang="EN-US">Dr. Naresh Kumar Pil li is a Staff Application Engineer (Power) at Semtech in Hyderabad\, worki ng on the design and modelling of power-management ICs. He holds a Ph.D. i n Power Electronics from IIT (BHU) Varanasi and brings over five years of post-doctoral industry experience across gate-driver and traction-inverter development at Bosch\, and high-power converter research at the Universit y of Nottingham for Rolls-Royce aerospace. His interests span SiC/GaN powe r devices\, gate-driver architectures\, and automotive functional safety.< /span></p>\n<p>Registrations are limited.&nbsp\;</p>\n<p><strong>Registrat ion Fees details:</strong></p>\n<p>For IEEE Participants - <strong>Nil</st rong></p>\n<p>For Non-IEEE Participants who submit the registration form w ill receive a payment link/QR code by email. A confirmation email will be sent upon receipt of the ₹300 registration fee.</p>\n<p><strong>For Quer ies contact:</strong><br>IEEE Members: Dr PV Rajgopal\, IES Chapter Vice C hair\, 9985306562<br>Non-IEEE Members: Dr. D. Hari Krishna\, IES Chapter S ecretary\, 9490215195</p> END:VEVENT END:VCALENDAR