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DTSTAMP:20260716T215420Z
UID:24D5771C-D956-42DA-A48B-DC58D7455300
DTSTART;TZID=Europe/London:20260820T133000
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DESCRIPTION:Title: Silicon Carbide power semiconductors: device modelling\,
  gate drivers and applications\n\nAbstract: Silicon Carbide (SiC) power se
 miconductors exhibit superior electrothermal characteristics compared to S
 ilicon counterparts. Lower conduction and switching losses\, higher operat
 ing temperatures and frequencies will impact the design and operation of p
 ower converters. Up to date\, SiC MOSFETs are the most successful device t
 echnology.\n\nThe first part of this lecture will provide the fundamental 
 design and operating principles of SiC MOSFETs\, as well as their static a
 nd dynamic modelling by utilizing experimental data. To accelerate simulat
 ion times\, a real-time hardware-in-the-loop dynamic model of high-voltage
  3.3 kV SiC MOSFETs will be analyzed. The second part will focus on passiv
 e and active gate drivers for low- and high-voltage SiC MOSFETs\, as well 
 as on low-coupling capacitance and high-isolation voltage power supplies f
 or energizing drive circuits. A particular focus will be placed on active 
 and adaptive gate drivers that can shape switching and conducting operatio
 n of SiC MOSFETs for enhancing reliability. Finally\, an overview of power
  electronics applications that can be benefited by employing SiC power sem
 iconductors will be presented. Among others\, applications such as e-mobil
 ity\, renewables and energy storage will be discussed.\n\nRoom: N/4.07\, B
 ldg: Queen&#39;s Buildings\, 14-17 The Parade\, Cardiff\, Wales\, United Kingd
 om\, CF10 4JB\, Virtual: https://events.vtools.ieee.org/m/568293
LOCATION:Room: N/4.07\, Bldg: Queen&#39;s Buildings\, 14-17 The Parade\, Cardif
 f\, Wales\, United Kingdom\, CF10 4JB\, Virtual: https://events.vtools.iee
 e.org/m/568293
ORGANIZER:Chenj111@cardiff.ac.uk
SEQUENCE:23
SUMMARY:Distinguished Lecture &quot;Silicon Carbide power semiconductors: device
  modelling\, gate drivers and applications&quot; hosted by PELS UK&amp;Ireland Chap
 ter
URL;VALUE=URI:https://events.vtools.ieee.org/m/568293
X-ALT-DESC:Description: &lt;br /&gt;&lt;p class=&quot;MsoNormal&quot;&gt;&lt;u&gt;&lt;span style=&quot;mso-fare
 ast-font-family: &#39;Times New Roman&#39;\; color: black\;&quot;&gt;Title&lt;/span&gt;&lt;/u&gt;&lt;span
  style=&quot;mso-fareast-font-family: &#39;Times New Roman&#39;\; color: black\;&quot;&gt;: &lt;st
 rong&gt;Silicon Carbide power semiconductors: device modelling\, gate drivers
  and applications&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;\n&lt;p class=&quot;MsoNormal&quot;&gt;&lt;u&gt;&lt;span style
 =&quot;mso-fareast-font-family: &#39;Times New Roman&#39;\; color: black\;&quot;&gt;Abstract&lt;/s
 pan&gt;&lt;/u&gt;&lt;span style=&quot;mso-fareast-font-family: &#39;Times New Roman&#39;\; color: b
 lack\;&quot;&gt;: Silicon Carbide (SiC) power semiconductors exhibit superior elec
 trothermal characteristics compared to Silicon counterparts. Lower conduct
 ion and switching losses\, higher operating temperatures and frequencies w
 ill impact the design and operation of power converters. Up to date\, SiC 
 MOSFETs are the most successful device technology.&lt;/span&gt;&lt;/p&gt;\n&lt;p class=&quot;M
 soNormal&quot;&gt;&lt;span style=&quot;mso-fareast-font-family: &#39;Times New Roman&#39;\; color:
  black\;&quot;&gt;The first part of this lecture will provide the fundamental desi
 gn and operating principles of SiC MOSFETs\, as well as their static and d
 ynamic modelling by utilizing experimental data. To accelerate simulation 
 times\, a real-time hardware-in-the-loop dynamic model of high-voltage 3.3
  kV SiC MOSFETs will be analyzed. The second part will focus on passive an
 d active gate drivers for low- and high-voltage SiC MOSFETs\, as well as o
 n low-coupling capacitance and high-isolation voltage power supplies for e
 nergizing drive circuits. A particular focus will be placed on active and 
 adaptive gate drivers that can shape switching and conducting operation of
  SiC MOSFETs for enhancing reliability. Finally\, an overview of power ele
 ctronics applications that can be benefited by employing SiC power semicon
 ductors will be presented. Among others\, applications such as e-mobility\
 , renewables and energy storage will be discussed.&lt;/span&gt;&lt;/p&gt;
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