BEGIN:VCALENDAR
VERSION:2.0
PRODID:IEEE vTools.Events//EN
CALSCALE:GREGORIAN
BEGIN:VTIMEZONE
TZID:Asia/Kolkata
BEGIN:STANDARD
DTSTART:19451014T230000
TZOFFSETFROM:+0630
TZOFFSETTO:+0530
TZNAME:IST
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTAMP:20260730T163628Z
UID:5B9516ED-89A9-46E2-8453-594E45026F34
DTSTART;TZID=Asia/Kolkata:20260805T190000
DTEND;TZID=Asia/Kolkata:20260805T203000
DESCRIPTION:This Regional Distinguished Lecture will focus on the switching
  behaviour of Wide Bandgap (WBG) power devices\, particularly Silicon Carb
 ide (SiC) MOSFETs and Gallium Nitride (GaN) HEMTs\, which are increasingly
  replacing conventional silicon devices in high-efficiency power converter
 s. The session will discuss the challenges associated with their fast swit
 ching characteristics\, including parasitic oscillations\, electromagnetic
  interference (EMI)\, voltage overshoot\, and switching losses. Prof. Kaus
 hik Basu will present circuit-based analytical and digital twin models cap
 able of predicting switching energy\, transient overvoltage\, switching sp
 eed\, and other key parameters\, enabling engineers to design reliable\, h
 igh-performance power converters using WBG devices. The lecture will also 
 highlight practical applications of these models in modern power electroni
 cs research and industry.\n\nEVENT POSTER :\n\n[]\n\nSpeaker(s): Dr. Kaush
 ik Basu\, \n\nVirtual: https://events.vtools.ieee.org/m/570340
LOCATION:Virtual: https://events.vtools.ieee.org/m/570340
ORGANIZER:hrishisiva2@gmail.com
SEQUENCE:28
SUMMARY:IEEE PELS REGIONAL DISTINGUISHED LECTURE (RDL) 
URL;VALUE=URI:https://events.vtools.ieee.org/m/570340
X-ALT-DESC:Description: <br /><p>&nbsp\;</p>\n<p>This Regional Distinguishe
 d Lecture will focus on the switching behaviour of Wide Bandgap (WBG) powe
 r devices\, particularly Silicon Carbide (SiC) MOSFETs and Gallium Nitride
  (GaN) HEMTs\, which are increasingly replacing conventional silicon devic
 es in high-efficiency power converters. The session will discuss the chall
 enges associated with their fast switching characteristics\, including par
 asitic oscillations\, electromagnetic interference (EMI)\, voltage oversho
 ot\, and switching losses. Prof. Kaushik Basu will present circuit-based a
 nalytical and digital twin models capable of predicting switching energy\,
  transient overvoltage\, switching speed\, and other key parameters\, enab
 ling engineers to design reliable\, high-performance power converters usin
 g WBG devices. The lecture will also highlight practical applications of t
 hese models in modern power electronics research and industry.&nbsp\;</p>\
 n<p><strong>EVENT POSTER :</strong></p>\n<p><img src="https://events.vtool
 s.ieee.org/vtools_ui/media/display/13360be9-e93c-4c83-9810-202cfeb63995" a
 lt="" width="280" height="374"></p>
END:VEVENT
END:VCALENDAR