BEGIN:VCALENDAR
VERSION:2.0
PRODID:IEEE vTools.Events//EN
CALSCALE:GREGORIAN
BEGIN:VTIMEZONE
TZID:Asia/Tokyo
BEGIN:STANDARD
DTSTART:19510909T000000
TZOFFSETFROM:+1000
TZOFFSETTO:+0900
TZNAME:JST
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTAMP:20260813T013431Z
UID:86BD538A-7D16-49AB-8B24-DEF27B8C345A
DTSTART;TZID=Asia/Tokyo:20261108T102900
DTEND;TZID=Asia/Tokyo:20261108T103100
DESCRIPTION:In this DL seminar\, Prof. Taiichi Otsuji gives a lecture on 2D
  Plasmons in topological insulator and Dirac materials for THz lasers & de
 tectors” .\n\nAgenda: \nThis lecture will provide a thorough overview of
  2D plasmons in topological insulators and Dirac materials for terahertz (
 THz) lasers and detectors. The lecture will cover the following topics: 1)
  the fundamental basis of Dirac plasmons in graphene\, topological insulat
 ors and other related two-dimensional (2D) materials\; 2) the physical pri
 nciples of photonic and plasmonic THz lasing\, as well as plasmonic\, phot
 othermoelectric and bolometric detection\; 3) the recent trends in transis
 tor-based device structures and their performance benchmarking\; and 4) fu
 ture trends and prospects. The THz range (0.1–10 THz) remains a technolo
 gical gap between electronics and photonics because compact\, room-tempera
 ture sources and detectors are limited. Dirac plasmons in graphene\, topol
 ogical insulators\, and related two-dimensional materials offer a promisin
 g way to bridge the THz gap. These systems can enable THz emission and det
 ection within unified device architectures due to their ultrahigh carrier 
 mobility\, viscous nonlinear hydrodynamics\, strong light-matter coupling\
 , and electrical tunability. We present Dirac plasmonic transistor structu
 res featuring graphene and related 2D materials\, including black phosphor
 ene\, black arsenic phosphorene\, and Bi2Se3 and Bi2Te3\, as well as Bi2Te
 3/Te eutectic heterostructures\, which serve as channel materials. These s
 tructures employ asymmetric dual- or triple-grating-gate electrodes and ex
 hibit current-driven amplification and Coulomb drag instability as high-ga
 in mechanisms. They also implement plasmonic\, photothermoelectric\, and b
 olometric detection\, which employ novel rectification mechanisms\, includ
 ing three-dimensional (3D) rectification and photothermionic-emission-assi
 sted bolometric rectification. These mechanisms achieve high responsivitie
 s and ultrafast responses. These results establish a scalable platform for
  compact\, low-power\, room-temperature THz systems.\n\nBldg: Digital Mult
 i-Purpose Hall \, 2-12-1\, Ookayama\,\, Meguro-ku\, Tokyo\, Tokyo\, Japan\
 ,  152-8550
LOCATION:Bldg: Digital Multi-Purpose Hall \, 2-12-1\, Ookayama\,\, Meguro-k
 u\, Tokyo\, Tokyo\, Japan\,  152-8550
ORGANIZER:jun.okuno@sony.com
SEQUENCE:24
SUMMARY:IEEE EDS Distinguished Lecturer Seminar 
URL;VALUE=URI:https://events.vtools.ieee.org/m/572385
X-ALT-DESC:Description: <br /><p>In this DL seminar\, Prof. Taiichi Otsuji 
 gives a lecture on 2D Plasmons in topological insulator and Dirac material
 s for THz lasers &amp\; detectors<span style="font-size: 11pt\; font-famil
 y: verdana\, geneva\, sans-serif\; color: #000000\;">&rdquo\; .</span></p>
 <br /><br />Agenda: <br /><p>This lecture will provide a thorough overview
  of 2D plasmons in topological insulators and Dirac materials for terahert
 z (THz) lasers and detectors. The lecture will cover the following topics:
  1) the fundamental basis of Dirac plasmons in graphene\, topological insu
 lators and other related two-dimensional (2D) materials\; 2) the physical 
 principles of photonic and plasmonic THz lasing\, as well as plasmonic\, p
 hotothermoelectric and bolometric detection\; 3) the recent trends in tran
 sistor-based device structures and their performance benchmarking\; and 4)
  future trends and prospects. The THz range (0.1&ndash\;10 THz) remains a 
 technological gap between electronics and photonics because compact\, room
 -temperature sources and detectors are limited. Dirac plasmons in graphene
 \, topological insulators\, and related two-dimensional materials offer a 
 promising way to bridge the THz gap. These systems can enable THz emission
  and detection within unified device architectures due to their ultrahigh 
 carrier mobility\, viscous nonlinear hydrodynamics\, strong light-matter c
 oupling\, and electrical tunability. We present Dirac plasmonic transistor
  structures featuring graphene and related 2D materials\, including black 
 phosphorene\, black arsenic phosphorene\, and Bi2Se3 and Bi2Te3\, as well 
 as Bi2Te3/Te eutectic heterostructures\, which serve as channel materials.
  These structures employ asymmetric dual- or triple-grating-gate electrode
 s and exhibit current-driven amplification and Coulomb drag instability as
  high-gain mechanisms. They also implement plasmonic\, photothermoelectric
 \, and bolometric detection\, which employ novel rectification mechanisms\
 , including three-dimensional (3D) rectification and photothermionic-emiss
 ion-assisted bolometric rectification. These mechanisms achieve high respo
 nsivities and ultrafast responses. These results establish a scalable plat
 form for compact\, low-power\, room-temperature THz systems.</p>
END:VEVENT
END:VCALENDAR