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DESCRIPTION:Deterministic Synthesis of High-quality 2D Semiconductors: Cont
 rolling Defects\, Dopants\, and Polytype\n\nRealizing the potential of 2D 
 transition metal dichalcogenides (TMDs) for next-generation semiconductor 
 technologies will require synthetic films that combine high crystalline qu
 ality with wafer-scale uniformity and precise control over electronic and 
 optical properties.\n\nIn this talk\, I will present recent work from our 
 group on precursor and reactor engineering to improve material quality whi
 le enabling control of composition\, doping\, and crystal structure.\n\nFi
 rst\, I will show how controlling precursor chemistry in solid-source CVD 
 enables WSe2 with enhanced uniformity\, low charged-defect densities\, and
  high-performance p-type transistors.\n\nI will then discuss metal-organic
  CVD approaches for scalable growth of WS2\, including substitutional dopi
 ng\, alloying\, and selective formation of the ferroelectric 3R polytype w
 ith distinct nonlinear optical and valley properties.\n\nFinally\, I will 
 introduce patterned dopant sources that enable programmed lateral carrier-
 density profiles.\n\nTogether\, these results show how advances in synthes
 is can move 2D semiconductors beyond exfoliated laboratory specimens towar
 d materials whose properties can be engineered during growth for future el
 ectronic and optoelectronic devices.\n\nRead more:\n\n[High-current p-type
  transistors from precursor-engineered synthetic monolayer WSe](https://ar
 xiv.org/pdf/2509.07299)\n\nSpeaker:\n\nAndy Mannix\n\nAssistant Professor 
 of Materials Science and Engineering at Stanford University.\n\nAGENDA:\n\
 nThursday August 27\, 2026\n\n11:30 AM: Networking\, Pizza &amp; Drinks\n\nNoo
 n -- 1 pm: Seminar\n\nPlease register on Eventbrite before 9:30 AM on Thur
 sday August 27\, 2026\n\n$4 IEEE members $6 non IEEE members\n\n(discounts
  for unemployed and students )\n\nBldg: ==&gt; Use corner entrance: Kifer Roa
 d / San Lucar Court ==&gt; Do not enter at main entrance on Kifer Road\, EAG 
 Labs\, 810 Kifer Road\, Sunnyvale\, California\, California\, United State
 s\, 95051
LOCATION:Bldg: ==&gt; Use corner entrance: Kifer Road / San Lucar Court ==&gt; Do
  not enter at main entrance on Kifer Road\, EAG Labs\, 810 Kifer Road\, Su
 nnyvale\, California\, California\, United States\, 95051
ORGANIZER:G.M.Friedman@ieee.org
SEQUENCE:22
SUMMARY:Synthesis of High-quality 2D Semiconductors: Controlling Defects\, 
 Dopants\, and Polytypes
URL;VALUE=URI:https://events.vtools.ieee.org/m/572412
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 rministic Synthesis of High-quality 2D Semiconductors: Controlling Defects
 \, Dopants\, and Polytype&lt;/span&gt;&lt;/strong&gt;&lt;/h4&gt;\n&lt;p&gt;&lt;img src=&quot;https://event
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 yes\;&quot;&gt;&amp;nbsp\;&lt;/span&gt;Realizing the potential of 2D transition metal dichal
 cogenides (TMDs) for next-generation semiconductor technologies will requi
 re synthetic films that combine high crystalline quality with wafer-scale 
 uniformity and precise control over electronic and optical properties. &lt;/s
 pan&gt;&lt;/strong&gt;&lt;/p&gt;\n&lt;p class=&quot;MsoNormal&quot;&gt;&lt;strong&gt;&lt;span style=&quot;font-size: 20
 .0pt\; line-height: 107%\;&quot;&gt;&lt;span style=&quot;mso-spacerun: yes\;&quot;&gt;&amp;nbsp\;&lt;/spa
 n&gt;&lt;span style=&quot;mso-spacerun: yes\;&quot;&gt;&amp;nbsp\;&lt;/span&gt;&lt;span style=&quot;mso-spaceru
 n: yes\;&quot;&gt;&amp;nbsp\;&lt;/span&gt;&lt;span style=&quot;mso-spacerun: yes\;&quot;&gt;&amp;nbsp\;&lt;/span&gt;In
  this talk\, I will present recent work from our group on precursor and re
 actor engineering to improve material quality while enabling control of co
 mposition\, doping\, and crystal structure. &lt;/span&gt;&lt;/strong&gt;&lt;/p&gt;\n&lt;p class
 =&quot;MsoNormal&quot;&gt;&lt;strong&gt;&lt;span style=&quot;font-size: 20.0pt\; line-height: 107%\;&quot;
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 an style=&quot;mso-spacerun: yes\;&quot;&gt;&amp;nbsp\;&lt;/span&gt;First\, I will show how contr
 olling precursor chemistry in solid-source CVD enables WSe2 with enhanced 
 uniformity\, low charged-defect densities\, and high-performance p-type tr
 ansistors. &lt;/span&gt;&lt;/strong&gt;&lt;/p&gt;\n&lt;p class=&quot;MsoNormal&quot;&gt;&lt;strong&gt;&lt;span style=
 &quot;font-size: 20.0pt\; line-height: 107%\;&quot;&gt;&lt;span style=&quot;mso-spacerun: yes\;
 &quot;&gt;&amp;nbsp\;&lt;/span&gt;&lt;span style=&quot;mso-spacerun: yes\;&quot;&gt;&amp;nbsp\;&lt;/span&gt;&lt;span styl
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 bsp\;&lt;/span&gt;I will then discuss metal-organic CVD approaches for scalable 
 growth of WS2\, including substitutional doping\, alloying\, and selective
  formation of the ferroelectric 3R polytype with distinct nonlinear optica
 l and valley properties. &lt;/span&gt;&lt;/strong&gt;&lt;/p&gt;\n&lt;p class=&quot;MsoNormal&quot;&gt;&lt;stron
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 run: yes\;&quot;&gt;&amp;nbsp\;&lt;/span&gt;Finally\, I will introduce patterned dopant sour
 ces that enable programmed lateral carrier-density profiles. &lt;/span&gt;&lt;/stro
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 &amp;nbsp\;&lt;/span&gt;&lt;span style=&quot;mso-spacerun: yes\;&quot;&gt;&amp;nbsp\;&lt;/span&gt;Together\, t
 hese results show how advances in synthesis can move 2D semiconductors bey
 ond exfoliated laboratory specimens toward materials whose properties can 
 be engineered during growth for future electronic and optoelectronic devic
 es.&lt;br style=&quot;mso-special-character: line-break\;&quot;&gt;&lt;!-- [if !supportLineBr
 eakNewLine]--&gt;&lt;br style=&quot;mso-special-character: line-break\;&quot;&gt;&lt;!--[endif]-
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 &gt;High-current p-type transistors from precursor-engineered synthetic monol
 ayer WSe&lt;/a&gt;&lt;/span&gt;&lt;/strong&gt;&lt;/p&gt;\n&lt;/div&gt;\n&lt;div class=&quot;css-1hbyxwu e1pmrtpl
 0&quot;&gt;\n&lt;p class=&quot;MsoNormal&quot;&gt;&amp;nbsp\;&lt;/p&gt;\n&lt;p class=&quot;MsoNormal&quot;&gt;&lt;strong&gt;&lt;span 
 style=&quot;font-size: 26.0pt\; line-height: 107%\;&quot;&gt;Speaker:&lt;/span&gt;&lt;/strong&gt;&lt;/
 p&gt;\n&lt;p class=&quot;MsoNormal&quot;&gt;&lt;strong&gt;&lt;span style=&quot;font-size: 26.0pt\; line-hei
 ght: 107%\;&quot;&gt;Andy Mannix&lt;/span&gt;&lt;/strong&gt;&lt;/p&gt;\n&lt;p class=&quot;MsoNormal&quot;&gt;&lt;strong
 &gt;&lt;span style=&quot;font-size: 26.0pt\; line-height: 107%\;&quot;&gt;Assistant Professor
  of Materials Science and Engineering at Stanford University.&lt;/span&gt;&lt;/stro
 ng&gt;&lt;/p&gt;\n&lt;p class=&quot;MsoNormal&quot;&gt;&lt;strong&gt;&lt;span style=&quot;font-size: 20.0pt\; lin
 e-height: 107%\;&quot;&gt;&amp;nbsp\;&lt;/span&gt;&lt;/strong&gt;&lt;strong&gt;AGENDA:&lt;/strong&gt;&lt;/p&gt;\n&lt;/d
 iv&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;/form&gt;&lt;/div&gt;\n&lt;/div&gt;\n&lt;/sect
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 verview. Use this section to provide more details about your event. You ca
 n include things to know\, venue information\, accessibility options&amp;mdash
 \;anything that will help people know what to expect.&quot;&gt;\n&lt;div id=&quot;AboutThi
 sEventPreview&quot; class=&quot;css-1dykrq ezg9ojv5&quot; data-testid=&quot;AboutThisEventPrev
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 mrtpl0&quot;&gt;\n&lt;p&gt;&lt;strong&gt;Thursday August 27&lt;/strong&gt;&lt;strong&gt;\, 2026&lt;/strong&gt;&lt;/
 p&gt;\n&lt;p&gt;&lt;strong&gt;11:30 AM: Networking\, Pizza &amp;amp\; Drinks&lt;/strong&gt;&lt;/p&gt;\n&lt;p
 &gt;&lt;strong&gt;Noon -- 1 pm: Seminar&lt;/strong&gt;&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;Please register on
  Eventbrite before 9:30 AM on&lt;/strong&gt;&lt;strong&gt; Thursday August 27\, 2026&lt;/
 strong&gt;&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;$4 IEEE members&amp;nbsp\; $6 non IEEE members &lt;/stron
 g&gt;&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;(discounts for unemployed and students&lt;/strong&gt; )&lt;/p&gt;\n
 &lt;/div&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;/div&gt;
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