BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/New_York BEGIN:DAYLIGHT DTSTART:20260308T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20261101T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20260825T185748Z UID:1092E319-0F9E-494A-B942-34464AEA45BA DTSTART;TZID=America/New_York:20260825T100000 DTEND;TZID=America/New_York:20260825T113000 DESCRIPTION:IEEE Toronto Electronic Devices Society is proud to invite you to a distinguished lecture by Dr. Yuhao Zhang of University of Hong Kong.\ n\nJoin us Tuesday\, 25 August 2026 at 10AM (EST)\n\nThis is a hybrid even t\, feel free to join us remotely if you cannot make itπŸ™Œ\n\nRefreshment s will be provided\n\nAbstract\n------------------------------------------ ---------------------\n\nPower electronics technologies provide electrical energy conversion using semiconductor devices and passive components. The global power semiconductor market reaches US$50 billion and is rapidly ex panding\, driven by applications like AI data centers\, electric vehicles\ , consumer electronics\, electric grids and renewable energy processing.\n \nPower device advances are driven by materials and device architectures. In addition to using wide-bandgap (WBG) or ultrawide-bandgap (UWBG) materi als\, multidimensional architectures – such as superjunction\, multi-cha nnel and multi-gate – can also improve device performance. These structu res enable electrostatics engineering in additional dimensions and bring t he benefits of geometrical scaling into power devices.\n\nThis talk presen ts our efforts in developing multidimensional power devices in WBG and UWB G semiconductors\, with the scope covering device and material innovation\ , packaging and thermal management\, as well as circuit applications. Thes e devices have achieved performance beyond the respective material limits of 1-D devices and hold great potential for advancing the speed\, efficien cy\, and form factor of power electronics systems\; some of them have reac hed initial commercialization. These devices also provide an exciting plat form to explore the fundamental material properties and carrier transports under the concurrence of high electric field and high current density in sub-micron-second switching transients.\n\nSpeaker(s): Dr. Yuhao Zhang\, \ n\nRoom: BA4164\, Bldg: Bahen Centre for Information Technology\, Toronto\ , Ontario\, Canada\, Virtual: https://events.vtools.ieee.org/m/572868 LOCATION:Room: BA4164\, Bldg: Bahen Centre for Information Technology\, Tor onto\, Ontario\, Canada\, Virtual: https://events.vtools.ieee.org/m/572868 ORGANIZER:jiupeng.zhang@mail.utoronto.ca SEQUENCE:19 SUMMARY:[IEEE CAS04/ED15/EP21/PHO36 EDS Distinguished Lecture] Multidimensi onal Power Devices in (Ultra-)Wide-Bandgap Semiconductors URL;VALUE=URI:https://events.vtools.ieee.org/m/572868 X-ALT-DESC:Description: <br /><p><span style="font-family: arial\, helvetic a\, sans-serif\; font-size: 14pt\;">IEEE Toronto Electronic Devices Societ y is proud to invite you to a distinguished lecture by <strong>Dr. Yuhao Z hang</strong> of University of Hong Kong.</span></p>\n<p><span style="font -family: arial\, helvetica\, sans-serif\; font-size: 14pt\;">Join us <span style="background-color: rgb(241\, 196\, 15)\;"><strong>Tuesday\, 25 Augu st 2026 at 10AM</strong></span> (EST)&nbsp\;</span></p>\n<p><span style="f ont-family: arial\, helvetica\, sans-serif\; font-size: 14pt\;">This is a hybrid event\, feel free to join us remotely if you cannot make itπŸ™Œ&nbs p\;</span></p>\n<p><span style="font-family: arial\, helvetica\, sans-seri f\; font-size: 14pt\;">Refreshments will be provided</span></p>\n<p>&nbsp\ ;</p>\n<p><span style="font-family: arial\, helvetica\, sans-serif\; font- size: 18pt\;"><strong>Abstract</strong></span></p>\n<hr>\n<p class="MsoNoS pacing" style="text-align: justify\; text-justify: inter-ideograph\;"><spa n lang="EN-US" style="font-size: 14pt\; font-family: arial\, helvetica\, s ans-serif\;">Power electronics technologies provide electrical energy conv ersion using semiconductor devices and passive components. The global powe r semiconductor market reaches US$50 billion and is rapidly expanding\, dr iven by applications like AI data centers\, electric vehicles\, consumer e lectronics\, electric grids and renewable energy processing.&nbsp\;</span> </p>\n<p class="MsoNoSpacing" style="text-align: justify\; text-justify: i nter-ideograph\;"><span lang="EN-US" style="font-size: 14pt\; font-family: arial\, helvetica\, sans-serif\;">Power device advances are driven by mat erials and device architectures. In addition to using wide-bandgap (WBG) o r ultrawide-bandgap (UWBG) materials\, multidimensional architectures &nda sh\; such as superjunction\, multi-channel and multi-gate &ndash\; can als o improve device performance. These structures enable electrostatics engin eering in additional dimensions and bring the benefits of geometrical scal ing into power devices.&nbsp\;</span></p>\n<p class="MsoNoSpacing" style=" text-align: justify\; text-justify: inter-ideograph\;"><span lang="EN-US" style="font-size: 14pt\; font-family: arial\, helvetica\, sans-serif\;">Th is talk presents our efforts in developing multidimensional power devices in WBG and UWBG semiconductors\, with the scope covering device and materi al innovation\, packaging and thermal management\, as well as circuit appl ications. These devices have achieved performance beyond the respective ma terial limits of 1-D devices and hold great potential for advancing the sp eed\, efficiency\, and form factor of power electronics systems\; some of them have reached initial commercialization. These devices also provide an exciting platform to explore the fundamental material properties and carr ier transports under the concurrence of high electric field and high curre nt density in sub-micron-second switching transients. <span style="mso-spa cerun: yes\;">&nbsp\;</span></span></p>\n<p class="MsoNoSpacing"><span lan g="EN-US" style="font-size: 14pt\; font-family: arial\, helvetica\, sans-s erif\;"><span style="mso-spacerun: yes\;"><img style="display: block\; mar gin-left: auto\; margin-right: auto\;" src="https://events.vtools.ieee.org /vtools_ui/media/display/86ae676e-e817-4fee-ad5b-d63887933c59" width="910" height="511"></span></span></p>\n<p class="MsoNoSpacing" style="text-alig n: justify\; text-justify: inter-ideograph\;">&nbsp\;</p> END:VEVENT END:VCALENDAR