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VERSION:2.0
PRODID:IEEE vTools.Events//EN
CALSCALE:GREGORIAN
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TZID:Asia/Kolkata
BEGIN:STANDARD
DTSTART:19451014T230000
TZOFFSETFROM:+0630
TZOFFSETTO:+0530
TZNAME:IST
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BEGIN:VEVENT
DTSTAMP:20260830T125451Z
UID:5A6E6A90-5276-4CB6-8285-DF601DCD0352
DTSTART;TZID=Asia/Kolkata:20260827T160000
DTEND;TZID=Asia/Kolkata:20260827T173000
DESCRIPTION:GaN electronics is undergoing a massive market surge globally. 
 Commercial GaN high electron mobility transistors (HEMTs) are bringing new
 er promises to power electronics\; these devices offer a higher switching 
 frequency compared to Si or SiC power devices. In this line\, vertical GaN
 -on-GaN devices are shown to offer even higher switching capability\, appe
 nded with additional functionalities beyond the reach of currently popular
  lateral GaN HEMTs. In this talk\, Dr. Sarkar will introduce the concepts 
 of emerging GaN-on-GaN vertical power devices and his efforts in understan
 ding crystal growth & device processing. Dr. Sarkar will also introduce 
 “thermal diffusion of metallic Mg into GaN” – a technology developed
  at Nagoya University and Dr. Sarkar have extensively collaborated in unde
 rstanding the device level implications.\n\nIIITDM Kancheepuram\, Chennai\
 , Tamil Nadu\, India
LOCATION:IIITDM Kancheepuram\, Chennai\, Tamil Nadu\, India
ORGANIZER:kppradhan@iiitdm.ac.in
SEQUENCE:20
SUMMARY:Vertical GaN-on-GaN Devices: Opportunities and Outlook
URL;VALUE=URI:https://events.vtools.ieee.org/m/574286
X-ALT-DESC:Description: <br /><p><span lang="EN-US" style="font-size: 12.0p
 t\; line-height: 107%\; font-family: 'Times New Roman'\,serif\; mso-fareas
 t-font-family: Calibri\; mso-fareast-theme-font: minor-latin\; mso-bidi-th
 eme-font: minor-bidi\; color: black\; mso-color-alt: windowtext\; backgrou
 nd: white\; mso-ansi-language: EN-US\; mso-fareast-language: EN-US\; mso-b
 idi-language: AR-SA\;">GaN electronics is undergoing a massive market surg
 e globally. Commercial GaN high electron mobility transistors (HEMTs) are 
 bringing newer promises to power electronics\; these devices offer a highe
 r switching frequency compared to Si or SiC power devices. In this line\, 
 vertical GaN-on-GaN devices are shown to offer even higher switching capab
 ility\, appended with additional functionalities beyond the reach of curre
 ntly popular lateral GaN HEMTs. In this talk\, Dr. Sarkar will introduce t
 he concepts of emerging GaN-on-GaN vertical power devices and his efforts 
 in understanding crystal growth &amp\; device processing. Dr. Sarkar will 
 also introduce &ldquo\;thermal diffusion of metallic Mg into GaN&rdquo\; &
 ndash\; a technology developed at Nagoya University and Dr. Sarkar have ex
 tensively collaborated in understanding the device level implications.</sp
 an></p>
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