BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Europe/Brussels BEGIN:DAYLIGHT DTSTART:20260329T030000 TZOFFSETFROM:+0100 TZOFFSETTO:+0200 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=3 TZNAME:CEST END:DAYLIGHT BEGIN:STANDARD DTSTART:20261025T020000 TZOFFSETFROM:+0200 TZOFFSETTO:+0100 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=10 TZNAME:CET END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20260828T092017Z UID:147330B0-4113-4FE9-B07A-6B537AE98CED DTSTART;TZID=Europe/Brussels:20260923T110000 DTEND;TZID=Europe/Brussels:20260923T120000 DESCRIPTION:Organic Thin Film Transistors (OTFTs) and Organic Electrochemic al Transistors (OECT) are foreseen as essential components for organic-bas ed flexible electronic (including neuromorphic) circuits and sensors. Thei r design and optimization will require accurate compact models of these de vices. A deep understanding of the physics of OTFTs and OECTs is necessary for the development of models for these devices.\n\nThis talk is intended to provide a review and discussion of the physical phenomena which are re levant to the behavior of OTFTs and OECTs. Some of these effects are still not fully understood. Afterwards\, suitable techniques to develop physica lly-based compact models will be presented. In particular\, drain current\ , capacitance\, transient and noise modeling will be targeted.[]\n\nCo-spo nsored by: INPACE\, SiNANO Institute\n\nSpeaker(s): \, Benjamin Iniguez\n\ nVirtual: https://events.vtools.ieee.org/m/574578 LOCATION:Virtual: https://events.vtools.ieee.org/m/574578 ORGANIZER:francis.balestra@grenoble-inp.fr SEQUENCE:35 SUMMARY:Physic and modeling of Organic Thin Film Transistors and Electroche mical Transistors URL;VALUE=URI:https://events.vtools.ieee.org/m/574578 X-ALT-DESC:Description: <br /><div class="elementToProof" style="box-sizing : border-box\; margin: 0px\; padding: 0px\; border: 0px rgb(44\, 78\, 158) \; font-style: normal\; font-variant-ligatures: normal\; font-variant-caps : normal\; font-variant-numeric: inherit\; font-variant-east-asian: inheri t\; font-variant-alternates: inherit\; font-variant-position: inherit\; fo nt-variant-emoji: inherit\; font-weight: 400\; font-stretch: inherit\; fon t-size: 16.1px\; line-height: inherit\; font-family: 'open sans'\, Helveti ca\, Arial\, sans-serif\; font-optical-sizing: inherit\; font-size-adjust: inherit\; font-kerning: inherit\; font-feature-settings: inherit\; font-v ariation-settings: inherit\; font-language-override: inherit\; vertical-al ign: baseline\; color: rgb(102\, 102\, 102)\; letter-spacing: normal\; orp hans: 2\; text-align: justify\; text-indent: 0px\; text-transform: none\; widows: 2\; word-spacing: 0px\; -webkit-text-stroke-width: 0px\; white-spa ce: normal\; background-color: rgb(255\, 255\, 255)\; text-decoration-thic kness: initial\; text-decoration-style: initial\; text-decoration-color: i nitial\;">Organic Thin Film Transistors (OTFTs)&nbsp\; and Organic Electro chemical Transistors (OECT) are foreseen as essential components for organ ic-based flexible electronic (including neuromorphic) circuits and&nbsp\; sensors. Their design and optimization&nbsp\; will require accurate compac t models of these devices. A deep understanding of the physics of OTFTs an d OECTs is necessary for the development of models for these devices.</div >\n<div class="elementToProof" style="box-sizing: border-box\; margin: 0px \; padding: 0px\; border: 0px rgb(44\, 78\, 158)\; font-style: normal\; fo nt-variant-ligatures: normal\; font-variant-caps: normal\; font-variant-nu meric: inherit\; font-variant-east-asian: inherit\; font-variant-alternate s: inherit\; font-variant-position: inherit\; font-variant-emoji: inherit\ ; font-weight: 400\; font-stretch: inherit\; font-size: 16.1px\; line-heig ht: inherit\; font-family: 'open sans'\, Helvetica\, Arial\, sans-serif\; font-optical-sizing: inherit\; font-size-adjust: inherit\; font-kerning: i nherit\; font-feature-settings: inherit\; font-variation-settings: inherit \; font-language-override: inherit\; vertical-align: baseline\; color: rgb (102\, 102\, 102)\; letter-spacing: normal\; orphans: 2\; text-align: just ify\; text-indent: 0px\; text-transform: none\; widows: 2\; word-spacing: 0px\; -webkit-text-stroke-width: 0px\; white-space: normal\; background-co lor: rgb(255\, 255\, 255)\; text-decoration-thickness: initial\; text-deco ration-style: initial\; text-decoration-color: initial\;">&nbsp\;</div>\n< div class="elementToProof" style="box-sizing: border-box\; margin: 0px\; p adding: 0px\; border: 0px rgb(44\, 78\, 158)\; font-style: normal\; font-v ariant-ligatures: normal\; font-variant-caps: normal\; font-variant-numeri c: inherit\; font-variant-east-asian: inherit\; font-variant-alternates: i nherit\; font-variant-position: inherit\; font-variant-emoji: inherit\; fo nt-weight: 400\; font-stretch: inherit\; font-size: 16.1px\; line-height: inherit\; font-family: 'open sans'\, Helvetica\, Arial\, sans-serif\; font -optical-sizing: inherit\; font-size-adjust: inherit\; font-kerning: inher it\; font-feature-settings: inherit\; font-variation-settings: inherit\; f ont-language-override: inherit\; vertical-align: baseline\; color: rgb(102 \, 102\, 102)\; letter-spacing: normal\; orphans: 2\; text-align: justify\ ; text-indent: 0px\; text-transform: none\; widows: 2\; word-spacing: 0px\ ; -webkit-text-stroke-width: 0px\; white-space: normal\; background-color: rgb(255\, 255\, 255)\; text-decoration-thickness: initial\; text-decorati on-style: initial\; text-decoration-color: initial\;">This talk is intende d to provide a review and discussion of the physical phenomena which are r elevant to the behavior of OTFTs and OECTs. Some of these effects are stil l not fully understood. Afterwards\, suitable techniques to develop physic ally-based compact models will be presented. In particular\, drain current \, capacitance\, transient and noise modeling will be targeted.<img src="h ttps://events.vtools.ieee.org/vtools_ui/media/display/2ed4a9c6-f7b5-4828-9 16d-fe12d7754d51" alt="" width="1920" height="1080"></div> END:VEVENT END:VCALENDAR