BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Denver BEGIN:DAYLIGHT DTSTART:20260308T030000 TZOFFSETFROM:-0700 TZOFFSETTO:-0600 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:MDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20261101T010000 TZOFFSETFROM:-0600 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:MST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20260903T154306Z UID:7CF9F350-3719-4C90-AF7E-A466B3FCD884 DTSTART;TZID=America/Denver:20260904T110000 DTEND;TZID=America/Denver:20260904T120000 DESCRIPTION:For two decades\, magnetic tunnel junctions (MTJs) have been vi tal in traditional computing memory and processing. Recently\, innovative paradigms like probabilistic bits and neuromorphic computing have emerged as promising solutions for next-generation\, unconventional computing devi ces. Driven by the pursuit of advanced functionalities\, recent research h as pivoted toward exploiting quantum phenomena—such as skyrmions—withi n diverse heterostructures and multilayers.\n\nBridging these foundational concepts to implementations\, this presentation first explores unconventi onal characteristics within magnetic systems. Specifically\, we focus on c harge stochasticity in traditional MTJs by analyzing bias-dependent noise data through the partition function\, complemented by tight-binding model calculations [1-4]. This highlights the potential of MTJs as platforms for understanding charge stochasticity from a practical\, device-level standp oint.\n\nBuilding upon these microscopic insights\, the second part of thi s talk shifts focus to macro-level control\, demonstrating how we can dyna mically manipulate the magnetic properties and topology of ferromagnetic m ultilayers and synthetic antiferromagnets via voltage-free proton toggling .\n\nFinally\, I will introduce state-of-the-art resources at synchrotron radiation facilities\, both at my home institute in Taiwan and through wor ldwide collaborations. I will discuss how cutting-edge techniques—X-ray Magnetic Circular Dichroism (XMCD)\, Momentum Microscopy (MM)\, Scanning T ransmission X-ray Microscopy (STXM)\, Angle-Resolved Photoemission Spectro scopy (ARPES)\, and Xray Holography—serve as powerful tools to unveil th e hidden magnetic and electronic structures of next-generation spintronic devices.\n\nReferences\n\n- Nano Letters 25\, 11776 (2025)\; Featured on t he Journal Cover. “Stochastic Nature of VoltageControlled Charge Dynamic s in AlOx Magnetic Tunnel Junctions”\n- Sci. Rep. 14\, 13664 (2024)\; “Bias polarity-dependent low-frequency noise in ultra-thin AlOx-based ma gnetic tunnel junctions”\n- Electronics 15\, 2525 (2021)\; “Low-Freque ncy 1-f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses”\n- Sci. Rep. 11\, 6027 (2021)\; “Electrically programmable magnetoresistance in AlOx-based mag netic tunnel junctions”\n\nSpeaker(s): \, Jhen-Yong\n\nRoom: A204\, Bldg : Osborne Center\, 1420 Austin Bluffs Pkwy\, Colorado Springs\, Colorado\, United States\, 80918 LOCATION:Room: A204\, Bldg: Osborne Center\, 1420 Austin Bluffs Pkwy\, Colo rado Springs\, Colorado\, United States\, 80918 ORGANIZER:jbrock8@uccs.edu SEQUENCE:14 SUMMARY:Prof. Jhen-Yong Hong - Neuromorphic computing and proton-toggling o f topology in magnetic multilayers URL;VALUE=URI:https://events.vtools.ieee.org/m/575630 X-ALT-DESC:Description: <br /><p>For two decades\, magnetic tunnel junction s (MTJs) have been vital in traditional computing memory and processing. R ecently\, innovative paradigms like probabilistic bits and neuromorphic co mputing have emerged as promising solutions for next-generation\, unconven tional computing devices. Driven by the pursuit of advanced functionalitie s\, recent research has pivoted toward exploiting quantum phenomena&mdash\ ;such as skyrmions&mdash\;within diverse heterostructures and multilayers. </p>\n<p>Bridging these foundational concepts to implementations\, this pr esentation first explores unconventional characteristics within magnetic s ystems. Specifically\, we focus on charge stochasticity in traditional MTJ s by analyzing bias-dependent noise data through the partition function\, complemented by tight-binding model calculations [1-4]. This highlights th e potential of MTJs as platforms for understanding charge stochasticity fr om a practical\, device-level standpoint.</p>\n<p>Building upon these micr oscopic insights\, the second part of this talk shifts focus to macro-leve l control\, demonstrating how we can dynamically manipulate the magnetic p roperties and topology of ferromagnetic multilayers and synthetic antiferr omagnets via voltage-free proton toggling.</p>\n<p>Finally\, I will introd uce state-of-the-art resources at synchrotron radiation facilities\, both at my home institute in Taiwan and through worldwide collaborations. I wil l discuss how cutting-edge techniques&mdash\;X-ray Magnetic Circular Dichr oism (XMCD)\, Momentum Microscopy (MM)\, Scanning Transmission X-ray Micro scopy (STXM)\, Angle-Resolved Photoemission Spectroscopy (ARPES)\, and Xra y Holography&mdash\;serve as powerful tools to unveil the hidden magnetic and electronic structures of next-generation spintronic devices.</p>\n<p>R eferences</p>\n<ol>\n<li>Nano Letters 25\, 11776 (2025)\; Featured on the Journal Cover. &ldquo\;Stochastic Nature of VoltageControlled Charge Dynam ics in AlOx Magnetic Tunnel Junctions&rdquo\;</li>\n<li>Sci. Rep. 14\, 136 64 (2024)\; &ldquo\;Bias polarity-dependent low-frequency noise in ultra-t hin AlOx-based magnetic tunnel junctions&rdquo\;</li>\n<li>Electronics 15\ , 2525 (2021)\; &ldquo\;Low-Frequency 1-f Noise Characteristics of Ultra-T hin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive R esponses&rdquo\;</li>\n<li>Sci. Rep. 11\, 6027 (2021)\; &ldquo\;Electrical ly programmable magnetoresistance in AlOx-based magnetic tunnel junctions& rdquo\;</li>\n</ol> END:VEVENT END:VCALENDAR