BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Asia/Tokyo BEGIN:STANDARD DTSTART:19510909T000000 TZOFFSETFROM:+1000 TZOFFSETTO:+0900 TZNAME:JST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20260906T053933Z UID:7CBB2365-130F-4D18-9C6A-7F652C235232 DTSTART;TZID=Asia/Tokyo:20261108T093000 DTEND;TZID=Asia/Tokyo:20261108T173000 DESCRIPTION:Wideband gap III-V technologies are the backbone of modern high -power RF systems\, from base stations to advanced radars. However\, as mo dern architectures demand\, achieving the required balance of high efficie ncy\, suitable linearity\, and wide bandwidth operation requires more than just standard design. It demands reliable nonlinear device models built o n precision and accurate measurement data.\n\nTherefore\, advanced and acc urate nonlinear modeling of RF diodes and transistors is needed to design improved high-performance circuits\, modules\, and complete systems. Trapp ing effects\, memory effects\, nonlinear parasitic components\, scaling re quirement\, and thermal issues must be considered to extract a reliable de vice model.\n\nModern measurement systems enable well-controlled and accur ate measurements to collect consistent data in short time. These systems a llow multiple measurements without large modifications\, such as double RF &DC pulsing\, non-50 ohm measurements using modulated signals\, vector loa d-pull at sub-THz frequencies\, etc. Then\, the innovative device models a nd modeling tools finalize the process to release a model that will be adm ired by design engineers.\n\nIn this workshop\, experienced speakers from industry and academia will share their experiences and insights about III- V device characterization and advanced modeling. Fundamentals of large sig nal measurements\, vector calibration for large signal measurements\, cali bration verification techniques\, modern modeling methods\, device size sc aling issues\, and measurement techniques to analyze nonlinear behaviors\, such as trapping\, will be covered. In addition to large signal topics\, noise modeling of III-V devices will be discussed. The workshop will concl ude with a networking session\, offering a casual atmosphere to discuss ch allenges and share ideas about the topics.\n\nChairs:\n\n- Osman Ceylan\, PhD (Maury Microwave\, USA)\n- Seiya Takashima (Sumitomo Electric Device I nnovations\, Inc.\, Japan)\n\n[Web page](https://apmc2026.org/technical-pr ogram-workshop.html)\n\nSpeaker(s): Jia-Shyan Wu\, Osman Ceylan\, Elanchez hian Veeramani\, Rana ElKashlan\, Ryoko Kishikawa\, Choon Beng\, Seyyid M. Dilek\, Lida Kouhalvandi\, Seiya Takashima\, Seiya Takashima\, Yutaro Yam aguchi\, Koji Yamanaka\n\nRoom: 411\, Bldg: Fukuoka International Congress Center\, 2-1 Sekijomachi\, Hakata Ward\, Fukuoka\, Fukuoka\, Japan\, 812- 0032 LOCATION:Room: 411\, Bldg: Fukuoka International Congress Center\, 2-1 Seki jomachi\, Hakata Ward\, Fukuoka\, Fukuoka\, Japan\, 812-0032 ORGANIZER:osmanceylan@ieee.org SEQUENCE:17 SUMMARY:Workshop: Advanced Nonlinear Modeling and Large-Signal Characteriza tion of III-V RF Devices URL;VALUE=URI:https://events.vtools.ieee.org/m/576049 X-ALT-DESC:Description: <br /><p>Wideband gap III-V technologies are the ba ckbone of modern high-power RF systems\, from base stations to advanced ra dars. However\, as modern architectures demand\, achieving the required ba lance of high efficiency\, suitable linearity\, and wide bandwidth operati on requires more than just standard design. It demands reliable nonlinear device models built on precision and accurate measurement data.</p>\n<p>Th erefore\, advanced and accurate nonlinear modeling of RF diodes and transi stors is needed to design improved high-performance circuits\, modules\, a nd complete systems. Trapping effects\, memory effects\, nonlinear parasit ic components\, scaling requirement\, and thermal issues must be considere d to extract a reliable device model.</p>\n<p>Modern measurement systems e nable well-controlled and accurate measurements to collect consistent data in short time. These systems allow multiple measurements without large mo difications\, such as double RF&amp\;DC pulsing\, non-50 ohm measurements using modulated signals\, vector load-pull at sub-THz frequencies\, etc. T hen\, the innovative device models and modeling tools finalize the process to release a model that will be admired by design engineers.</p>\n<p>In t his workshop\, experienced speakers from industry and academia will share their experiences and insights about III-V device characterization and adv anced modeling. Fundamentals of large signal measurements\, vector calibra tion for large signal measurements\, calibration verification techniques\, modern modeling methods\, device size scaling issues\, and measurement te chniques to analyze nonlinear behaviors\, such as trapping\, will be cover ed. In addition to large signal topics\, noise modeling of III-V devices w ill be discussed. The workshop will conclude with a networking session\, o ffering a casual atmosphere to discuss challenges and share ideas about th e topics.</p>\n<p>Chairs:</p>\n<ul>\n<li>Osman Ceylan\, PhD (Maury Microwa ve\, USA)</li>\n<li>Seiya Takashima (Sumitomo Electric Device Innovations\ , Inc.\, Japan)</li>\n</ul>\n<p><a href="https://apmc2026.org/technical-pr ogram-workshop.html" target="_blank" rel="noopener">Web page</a></p>\n<p>& nbsp\;</p> END:VEVENT END:VCALENDAR