BEGIN:VCALENDAR
VERSION:2.0
PRODID:IEEE vTools.Events//EN
CALSCALE:GREGORIAN
BEGIN:VTIMEZONE
TZID:America/Guatemala
BEGIN:STANDARD
DTSTART:20060930T230000
TZOFFSETFROM:-0500
TZOFFSETTO:-0600
TZNAME:CST
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTAMP:20260909T181846Z
UID:736F933E-7C0C-4B47-9805-419D617F12DA
DTSTART;TZID=America/Guatemala:20260916T154500
DTEND;TZID=America/Guatemala:20260916T170000
DESCRIPTION:Quantum sensors built from atomic-scale spin defects have trans
 formed our ability to measure magnetic fields\, temperature\, and strain w
 ith nanoscale precision — the nitrogen-vacancy (NV-) center in diamond i
 s the most celebrated example. In this talk\, I will introduce a newer mem
 ber of this family: the negatively charged boron vacancy (VB⁻) defect in
  hexagonal boron nitride (hBN)\, a van der Waals layered material that can
  be thinned to a single atomic layer and integrated directly into two-dime
 nsional heterostructures.\n\nI will describe our group’s effort to devel
 op VB⁻-based quantum sensing from the ground up — starting with the de
 fects themselves and building toward a working sensing platform. Along the
  way\, we encountered and addressed several fundamental challenges that li
 mit this technology’s real-world performance: the intrinsically low phot
 oluminescence quantum yield of VB⁻ that constrains optical readout sensi
 tivity\, the instability of the defect’s charge state under illumination
  and in different device environments\, and the difficulty of delivering m
 icrowave fields efficiently to a sensing layer only atoms thick. I will pr
 esent the engineering solutions we developed for each of these problems 
 — including microwave delivery structures tailored to two-dimensional ma
 terials\, strategies for stabilizing the defect’s charge state using eng
 ineered van der Waals interfaces\, and approaches for enhancing both micro
 wave and optical coupling to the sensing layer.\n\nI will close by discuss
 ing where this technology is headed: opportunities to combine hBN spin def
 ects with acoustic and electrical readout techniques\, and what it will ta
 ke to move from laboratory demonstrations toward practical quantum sensors
  for applications ranging from fundamental materials science to industrial
  sensing.\n\nGallalee Hall\, Tuscaloosa\, Alabama\, United States
LOCATION:Gallalee Hall\, Tuscaloosa\, Alabama\, United States
ORGANIZER:jbeikmohammadi@ua.edu
SEQUENCE:9
SUMMARY:Seeing the Invisible with Atomic Defects: Quantum Sensing using spi
 n defects in Layered Crystals
URL;VALUE=URI:https://events.vtools.ieee.org/m/576767
X-ALT-DESC:Description: &lt;br /&gt;&lt;p&gt;Quantum sensors built from atomic-scale sp
 in defects have transformed our ability to measure magnetic fields\, tempe
 rature\, and strain with nanoscale precision &amp;mdash\; the nitrogen-vacancy
  (NV-) center in diamond is the most celebrated example. In this talk\, I 
 will introduce a newer member of this family: the negatively charged boron
  vacancy (VB⁻) defect in hexagonal boron nitride (hBN)\, a van der Waals
  layered material that can be thinned to a single atomic layer and integra
 ted directly into two-dimensional heterostructures.&lt;/p&gt;\n&lt;p&gt;I will describ
 e our group&amp;rsquo\;s effort to develop VB⁻-based quantum sensing from th
 e ground up &amp;mdash\; starting with the defects themselves and building tow
 ard a working sensing platform. Along the way\, we encountered and address
 ed several fundamental challenges that limit this technology&amp;rsquo\;s real
 -world performance: the intrinsically low photoluminescence quantum yield 
 of VB⁻ that constrains optical readout sensitivity\, the instability of 
 the defect&amp;rsquo\;s charge state under illumination and in different devic
 e environments\, and the difficulty of delivering microwave fields efficie
 ntly to a sensing layer only atoms thick. I will present the engineering s
 olutions we developed for each of these problems &amp;mdash\; including microw
 ave delivery structures tailored to two-dimensional materials\, strategies
  for stabilizing the defect&amp;rsquo\;s charge state using engineered van der
  Waals interfaces\, and approaches for enhancing both microwave and optica
 l coupling to the sensing layer.&lt;/p&gt;\n&lt;p&gt;I will close by discussing where 
 this technology is headed: opportunities to combine hBN spin defects with 
 acoustic and electrical readout techniques\, and what it will take to move
  from laboratory demonstrations toward practical quantum sensors for appli
 cations ranging from fundamental materials science to industrial sensing.&lt;
 /p&gt;
END:VEVENT
END:VCALENDAR

