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DTSTART:20261101T010000
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DTSTAMP:20260911T153243Z
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DTSTART;TZID=America/New_York:20261009T120000
DTEND;TZID=America/New_York:20261009T130000
DESCRIPTION:Abstract: Emerging semiconductor materials routinely demonstrat
 e compelling intrinsic properties: wide bandgaps\, high breakdown fields\,
  and exceptional high-frequency potential\, yet only a small fraction ever
  becomes ubiquitous technologies. The limiting factor is rarely a single d
 evice metric\; it is the absence of a scalable\, repeatable engineering pa
 thway that turns a material into a reliable platform.\nIn this invited tal
 k\, I will present a holistic framework for accelerating the adoption of e
 merging compound semiconductors built on three coupled pillars. First\, se
 lective and controllable (“programmable”) doping is essential to enabl
 e low-resistance contacts\, stable junctions\, and manufacturable device a
 rchitectures. Second\, integrated thermal design must be treated as a firs
 t-order constraint for high-power and harsh-environment operation\, and in
  practice this often requires heterogeneous integration of dissimilar mate
 rials to extract heat and eliminate thermal bottlenecks. Third\, radiation
  resilience is increasingly critical for high-power/high-frequency electro
 nics\, particularly as these systems move into space and other extreme ope
 rating environments where defects and trapping can dominate long-term stab
 ility.\nUsing III-nitride devices as a test vehicle \, I will show how thi
 s three-pillars approach forms a repeatable methodology that can be stress
 -tested\, refined\, and extended as each new compound semiconductor emerge
 s. The central message is simple: a material becomes ubiquitous only when 
 doping control\, heat extraction through integration\, and radiation robus
 tness are engineered together\, early\, intentionally\, and repeatably.\n\
 nSpeaker(s): Dr. Mona Ebrish Mona Ebrish\, Ph.D. Assistant Professor\, Ele
 ctrical &amp; Computer Engineering Department\,  Vanderbilt University\, \n\nV
 irtual: https://events.vtools.ieee.org/m/577027
LOCATION:Virtual: https://events.vtools.ieee.org/m/577027
ORGANIZER:uzma.rana@ibm.com
SEQUENCE:40
SUMMARY:Engineering Emerging Semiconductors for Next-Generation Devices: Pr
 ogrammable Doping\, Heterogeneous Integration\, and Radiation Resilience
URL;VALUE=URI:https://events.vtools.ieee.org/m/577027
X-ALT-DESC:Description: &lt;br /&gt;&lt;div&gt;&lt;strong data-olk-copy-source=&quot;MessageBod
 y&quot;&gt;Abstract:&lt;/strong&gt;&amp;nbsp\;Emerging semiconductor materials routinely dem
 onstrate compelling intrinsic properties: wide bandgaps\, high breakdown f
 ields\, and exceptional high-frequency potential\, yet only a small fracti
 on ever becomes ubiquitous technologies. The limiting factor is rarely a s
 ingle device metric\; it is the absence of a scalable\, repeatable enginee
 ring pathway that turns a material into a reliable platform.&lt;/div&gt;\n&lt;div&gt;I
 n this invited talk\, I will present a holistic framework for accelerating
  the adoption of emerging compound semiconductors built on three coupled p
 illars. First\, selective and controllable (&amp;ldquo\;programmable&amp;rdquo\;) 
 doping is essential to enable low-resistance contacts\, stable junctions\,
  and manufacturable device architectures. Second\, integrated thermal desi
 gn must be treated as a first-order constraint for high-power and harsh-en
 vironment operation\, and in practice this often requires heterogeneous in
 tegration of dissimilar materials to extract heat and eliminate thermal bo
 ttlenecks. Third\, radiation resilience is increasingly critical for high-
 power/high-frequency electronics\, particularly as these systems move into
  space and other extreme operating environments where defects and trapping
  can dominate long-term stability.&lt;/div&gt;\n&lt;div&gt;Using III-nitride devices a
 s a test vehicle \, I will show how this three-pillars approach forms a re
 peatable methodology that can be stress-tested\, refined\, and extended as
  each new compound semiconductor emerges. The central message is simple: a
  material becomes ubiquitous only when doping control\, heat extraction th
 rough integration\, and radiation robustness are engineered together\, ear
 ly\, intentionally\, and repeatably.&lt;/div&gt;
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