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DTSTAMP:20260927T000821Z
UID:2D867456-27E5-49CB-94F8-805DB6603BE0
DTSTART;TZID=America/Los_Angeles:20260923T180000
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DESCRIPTION:Abstract: Gallium Nitride (GaN) is a material that does not exi
 st in nature and along with alloys made by mixing it with Indium Nitride a
 nd/or Aluminum Nitride spans the spectrum from the infrared {InN (Eg (band
 gap)0.7eV)} to the UV {AlN (Eg=6.2eV)}. This explains its applications for
 m red-blue-green displays to solid state white lighting to UV emitters for
  sterilization applications as an examples. GaN also has remarkable electr
 onic properties with electron mobilities greater than 2000 cm2V-1s-1 with 
 attendant large charge densities. Its breakdown electric field is 3MV/cm w
 hich 10X that of Si. The ability of the material to simultaneously deliver
  large currents at high voltages with low dissipative resistance makes it 
 a preferred RF power source from 1GHz to 130GHz (and beyond) and also the 
 choice of delivering high frequency power conversion in compact form facto
 rs for laptop and mobile phone chargers\, PV inverters\, data server power
  supplies and EV chargers. This talk will cover these 3 domains of applica
 tions: a minimum 3 slices of pizza kinda talk.\n\nSpeaker(s): Mishra\, \n\
 nBldg: Rusty's Pizza\, 5934 Calle Real\, Goleta\, California\, United Stat
 es\, 93117
LOCATION:Bldg: Rusty's Pizza\, 5934 Calle Real\, Goleta\, California\, Unit
 ed States\, 93117
ORGANIZER:ameyyappan@ieee.org
SEQUENCE:22
SUMMARY:IEEE CCS Event 23 Sep @ Rustys "Gallium Nitride Materials and Devic
 es" Umesh K. Mishra PhD
URL;VALUE=URI:https://events.vtools.ieee.org/m/577916
X-ALT-DESC:Description: <br /><p class="MsoNormal"><strong>Abstract:</stron
 g> Gallium Nitride (GaN) is a material that does not exist in nature and a
 long with alloys made by mixing it with Indium Nitride and/or Aluminum Nit
 ride spans the spectrum from the infrared {InN (Eg (bandgap)0.7eV)} to the
  UV {AlN (Eg=6.2eV)}. This explains its applications form red-blue-green d
 isplays to solid state white lighting to UV emitters for sterilization app
 lications as an examples. GaN also has remarkable electronic properties wi
 th electron mobilities greater than 2000 cm<sup>2</sup>V<sup>-1</sup>s<sup
 >-1</sup> with attendant large charge densities. Its breakdown electric fi
 eld is 3MV/cm which 10X that of Si. The ability of the material to simulta
 neously deliver large currents at high voltages with low dissipative resis
 tance makes it a preferred RF power source from 1GHz to 130GHz (and beyond
 ) and also the choice of delivering high frequency power conversion in com
 pact form factors for laptop and mobile phone chargers\, PV inverters\, da
 ta server power supplies and EV chargers. This talk will cover these 3 dom
 ains of applications: a minimum 3 slices of pizza kinda talk.</p>
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