BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/New_York BEGIN:DAYLIGHT DTSTART:20270314T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20261101T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20260920T175145Z UID:A2CA9F9A-31C4-4AE0-AE95-969BF8D58E22 DTSTART;TZID=America/New_York:20261113T102000 DTEND;TZID=America/New_York:20261113T231500 DESCRIPTION:[]\n\nAbstract:\n\nSource-gated transistors (SGTs) have a relat ively long history of development but only recently have mainstream techno logies allowed for their effective implementation at scale. This talk is a ddressed to those interested in efficient analog and mixed signal design w ith advanced thin-film transistors. They provide a development progression with a forward look toward SGT application to future edge processing of s ensor data\, signal conditioning\, and current-mode driving. Crucially\, t he concept can be applied in practically any material system. As such\, th e talk will present the fundamentals of contact effect engineering and mod elling\, design rules for successful SGT implementation\, specifics of per formance optimisation in thin-film silicon\, organic\, and oxide semicondu ctors\, and structural evolutions for additional functionality. Finally\, the next step in the evolution of contact-controlled thin-film transistor\ , the multimodal transistor (MMT) will be briefly introduced.\n\nSpeaker(s ): Nazek\, \n\nRoom: 277\, Bldg: Caldwell Lab\, Department of Electrical a nd Computer Engineering\, 2024 Neil Ave\, Columbus\, Ohio\, United States\ , 43210\, Virtual: https://events.vtools.ieee.org/m/578821 LOCATION:Room: 277\, Bldg: Caldwell Lab\, Department of Electrical and Comp uter Engineering\, 2024 Neil Ave\, Columbus\, Ohio\, United States\, 43210 \, Virtual: https://events.vtools.ieee.org/m/578821 ORGANIZER:pberger@ieee.org SEQUENCE:17 SUMMARY:IEEE EDS/PHO Columbus DL Speaker: Key considerations for obtaining high performance contact-controlled thin-film transistors (Prof. Radu A. S porea\, University of Surrey) URL;VALUE=URI:https://events.vtools.ieee.org/m/578821 X-ALT-DESC:Description: <br /><p class="MsoNormal"><img src="https://events .vtools.ieee.org/vtools_ui/media/display/9b0e5a20-070e-46b5-ad04-033c1a2c8 9f7" alt="" width="1000" height="1294"></p>\n<p class="MsoNormal" style="m so-pagination: none\; text-align: justify\; text-justify: inter-word\; mar gin-bottom: 0pt\; line-height: 90%\;"><span lang="en-US" style="font-size: 16.0pt\; line-height: 90%\; font-family: Calibri\; mso-armenian-font-fami ly: Calibri\; mso-hebrew-font-family: Calibri\; mso-arabic-font-family: Ca libri\; mso-thai-font-family: Calibri\; color: black\; mso-style-textfill- type: solid\; mso-style-textfill-fill-color: black\; mso-style-textfill-fi ll-alpha: 100%\; text-decoration: underline\; text-underline: single\; fon t-weight: bold\; language: en-US\; mso-ansi-language: en-US\; mso-ligature s: none\;">Abstract:</span><span lang="en-US" style="font-size: 16.0pt\; l ine-height: 90%\; font-family: Calibri\; mso-armenian-font-family: Calibri \; mso-hebrew-font-family: Calibri\; mso-arabic-font-family: Calibri\; mso -thai-font-family: Calibri\; color: black\; mso-style-textfill-type: solid \; mso-style-textfill-fill-color: black\; mso-style-textfill-fill-alpha: 1 00%\; font-weight: bold\; language: en-US\; mso-ansi-language: en-US\; mso -ligatures: none\;"> </span><span lang="en-US" style="font-size: 14.0pt\; line-height: 90%\; font-family: Calibri\; mso-armenian-font-family: Calibr i\; mso-hebrew-font-family: Calibri\; mso-arabic-font-family: Calibri\; ms o-thai-font-family: Calibri\; color: black\; mso-style-textfill-type: soli d\; mso-style-textfill-fill-color: black\; mso-style-textfill-fill-alpha: 100%\; font-weight: bold\; language: en-US\; mso-ansi-language: en-US\; ms o-ligatures: none\;"><span style="mso-spacerun: yes\;">&nbsp\;&nbsp\;</spa n></span></p>\n<p class="MsoNormal" style="mso-pagination: none\; text-ali gn: justify\; text-justify: inter-word\; margin-bottom: 0pt\; line-height: 90%\;"><span lang="en-US" style="font-size: 14.0pt\; line-height: 90%\; f ont-family: Calibri\; mso-armenian-font-family: Calibri\; mso-hebrew-font- family: Calibri\; mso-arabic-font-family: Calibri\; mso-thai-font-family: Calibri\; color: black\; mso-style-textfill-type: solid\; mso-style-textfi ll-fill-color: black\; mso-style-textfill-fill-alpha: 100%\; language: en- US\; mso-ansi-language: en-US\; mso-ligatures: none\;">Source-gated transi stors (SGTs) have a relatively long history of development but only recent ly have mainstream technologies allowed for their effective implementation at scale. This talk is addressed to those interested in efficient analog and mixed signal design with advanced thin-film transistors. They provide a development progression with a forward look toward SGT application to fu ture edge processing of sensor data\, signal conditioning\, and current-mo de driving. Crucially\, the concept can be applied in practically any mate rial system. As such\, the talk will present the fundamentals of contact e ffect engineering and modelling\, design rules for successful SGT implemen tation\, specifics of performance optimisation in thin-film silicon\, orga nic\, and oxide semiconductors\, and structural evolutions for additional functionality. Finally\, the next step in the evolution of contact-control led thin-film transistor\, the multimodal transistor (MMT) will be briefly introduced. </span></p>\n<p class="MsoNormal" style="mso-pagination: none \;"><span lang="en-US" style="language: en-US\; mso-ligatures: none\;">&nb sp\;</span></p> END:VEVENT END:VCALENDAR