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PRODID:IEEE vTools.Events//EN
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TZID:Africa/Johannesburg
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DTSTART:19440319T010000
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DTSTAMP:20261012T115426Z
UID:0A68845B-7D21-42DE-B3AD-154B206EA363
DTSTART;TZID=Africa/Johannesburg:20261012T100000
DTEND;TZID=Africa/Johannesburg:20261012T110000
DESCRIPTION:This presentation discusses high power monolithic microwave int
 egrated circuit (MMIC) power amplifier (PA) design in Gallium Arsenide (Ga
 As) and Gallium Nitride (GaN). At a high level\, GaN versus GaAs semicondu
 ctor technology from the perspective of power amplifier design metrics is 
 analyzed to help determine the relative advantages and disadvantages of ea
 ch technology. This is followed with an introduction of the most prevalent
  MMIC design topologies for the bulk of microwave applications which inclu
 de reactively matched\, non-uniform distributed\, balanced\, push-pull\, D
 oherty and serially combined. Following introduction of the main topologie
 s\, the presentation focuses on the potential pitfalls the MMIC designer c
 an encounter with detailed discussion on how to avoid them with the goal o
 f first past design success. The presentation relies on experience from th
 e author’s career with over 20 years of experience in the defense and co
 mmercial industries as well as academia. MMIC designers will appreciate th
 e candid explanation of the design topologies and pitfalls while non-desig
 ners will come away with a good working knowledge of what can be achieved 
 and what to watch out for.\n\nSpeaker(s): Michael Roberg\n\nAgenda: \nStel
 lenbosch University is hosting this lecture by IEEE MTT-S Distinguished Mi
 crowave Lecturer\, Dr Michael Roberg.\n\nRoom: E3076 (access info per emai
 l day before)\, Bldg: Department of Electrical and Electronic Engineering\
 , Bosman Rd\, Stellenbosch University\, Stellenbosch\, Western Cape\, Sout
 h Africa\, 7600
LOCATION:Room: E3076 (access info per email day before)\, Bldg: Department 
 of Electrical and Electronic Engineering\, Bosman Rd\, Stellenbosch Univer
 sity\, Stellenbosch\, Western Cape\, South Africa\, 7600
ORGANIZER:mmbotha@sun.ac.za
SEQUENCE:104
SUMMARY:Power Without Pain: High Power MMIC PA Design\, the Pitfalls and ho
 w to Avoid Them
URL;VALUE=URI:https://events.vtools.ieee.org/m/582824
X-ALT-DESC:Description: <br /><p>This presentation discusses high power mon
 olithic microwave integrated circuit (MMIC) power amplifier (PA) design in
  Gallium Arsenide (GaAs) and Gallium Nitride (GaN).&nbsp\; At a high level
 \, GaN versus GaAs semiconductor technology from the perspective of power 
 amplifier design metrics is analyzed to help determine the relative advant
 ages and disadvantages of each technology.&nbsp\; This is followed with an
  introduction of the most prevalent MMIC design topologies for the bulk of
  microwave applications which include reactively matched\, non-uniform dis
 tributed\, balanced\, push-pull\, Doherty and serially combined.&nbsp\; Fo
 llowing introduction of the main topologies\, the presentation focuses on 
 the potential pitfalls the MMIC designer can encounter with detailed discu
 ssion on how to avoid them with the goal of first past design success.&nbs
 p\; The presentation relies on experience from the author&rsquo\;s career 
 with over 20 years of experience in the defense and commercial industries 
 as well as academia.&nbsp\; MMIC designers will appreciate the candid expl
 anation of the design topologies and pitfalls while non-designers will com
 e away with a good working knowledge of what can be achieved and what to w
 atch out for.</p><br /><br />Agenda: <br /><p>Stellenbosch University is h
 osting this lecture by IEEE MTT-S Distinguished Microwave Lecturer\, Dr Mi
 chael Roberg.&nbsp\;</p>
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