BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Asia/Tokyo BEGIN:STANDARD DTSTART:19510909T000000 TZOFFSETFROM:+1000 TZOFFSETTO:+0900 TZNAME:JST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20261009T062628Z UID:FEA7E9B2-8EB8-41DD-9EA5-35825E8853D4 DTSTART;TZID=Asia/Tokyo:20261019T150000 DTEND;TZID=Asia/Tokyo:20261019T163000 DESCRIPTION:IEEE Magnetics Society Distinguished LecturerのGuenter Reiss 先生（Bielefeld University）をお招きし、下記の通り講演会 を開催いたします。\n\n多くの方のご出席を賜りますよ う、ご案内申し上げます。\n\n講演内容：\nProf. Guenter Rei ss (Bielefeld University)\nTitle： New Materials and Interface Effects in Charge and Spin Transport in Magnetic Heterostructures\n\nMagnetic hetero structures are key devices for spin electronics. Their preparation require s a combination of thin film deposition with sub-angstrom control\, field- annealing\, and nanopatterning. If fully functional\, they can help fundam ental research on new materials and effects as well open applications in s ensors\, memory\, logic\, and oscillators. An introduction will present ex amples of basic effects and their applications. We then will discuss sever al novel materials and interface-induced effects occurring in magnetic het erostructures: The growth of altermagnetic thin films and their integratio n in magnetic tunnel junctions with barriers such as RuO2 are at present i ntensively investigated due to their potentially spin-split band structure and related spin currents. X-ray analysis reveals a high crystalline qual ity of the films with or without twinning depending on the choice of the s ubstrate. When integrated with an MgO tunnel barrier and a ferromagnetic c ounter-electrode\, signatures of a tunneling magnetoresistance strongly de pend on the bias voltage and are not yet fully understood. When integrated with ferromagnets (Ni80Fe20) or heavy metals (Pt)\, an analysis based on the 2ω method shows the presence of torques in accordance with a spin cur rent at the interface. When replacing the altermagnet by a ferromagnet\, t he heavy metal can show a proximity-induced ferromagnetism at the interfac e\, which substantially influences the results of well-known phenomena suc h as the spin Seebeck\, anomalous Nernst\, or anomalous Hall effects. Exam ples will be discussed using metallic as well as insulating ferro- or ferr imagnets and recipes for disentangling the many effects will be given.\n\n Bldg: 1号館 2階 大会議室\, 東北大学工学部電子情報シ ステム・応物系\, Sendai\, Miyagi\, Japan LOCATION:Bldg: 1号館 2階 大会議室\, 東北大学工学部電子情 報システム・応物系\, Sendai\, Miyagi\, Japan ORGANIZER:simon@riec.tohoku.ac.jp SEQUENCE:12 SUMMARY:IEEE Magnetics Society DL講演会 URL;VALUE=URI:https://events.vtools.ieee.org/m/583705 X-ALT-DESC:Description: <br /><p>IEEE Magnetics Society Distinguished Lectu rerのGuenter Reiss先生（Bielefeld University）をお招きし、下 記の通り講演会を開催いたします。</p>\n<p>&nbsp\;<br>多く の方のご出席を賜りますよう、ご案内申し上げます。</ p>\n<p>講演内容：&nbsp\;<br>Prof. Guenter Reiss (Bielefeld University ) <br>Title： New Materials and Interface Effects in Charge and Spin Tran sport in Magnetic Heterostructures</p>\n<p>Magnetic heterostructures are k ey devices for spin electronics. Their preparation requires a combination of thin film deposition with sub-angstrom control\, field-annealing\, and nanopatterning. If fully functional\, they can help fundamental research o n new materials and effects as well open applications in sensors\, memory\ , logic\, and oscillators. An introduction will present examples of basic effects and their applications. We then will discuss several novel materia ls and interface-induced effects occurring in magnetic heterostructures: T he growth of altermagnetic thin films and their integration in magnetic tu nnel junctions with barriers such as RuO<sub>2</sub>&nbsp\;are at present intensively investigated due to their potentially spin-split band structur e and related spin currents. X-ray analysis reveals a high crystalline qua lity of the films with or without twinning depending on the choice of the substrate. When integrated with an MgO tunnel barrier and a ferromagnetic counter-electrode\, signatures of a tunneling magnetoresistance strongly d epend on the bias voltage and are not yet fully understood. When integrate d with ferromagnets (Ni<sub>80</sub>Fe<sub>20</sub>) or heavy metals (Pt)\ , an analysis based on the 2&omega\; method shows the presence of torques in accordance with a spin current at the interface. When replacing the alt ermagnet by a ferromagnet\, the heavy metal can show a proximity-induced f erromagnetism at the interface\, which substantially influences the result s of well-known phenomena such as the spin Seebeck\, anomalous Nernst\, or anomalous Hall effects. Examples will be discussed using metallic as well as insulating ferro- or ferrimagnets and recipes for disentangling the ma ny effects will be given.</p> END:VEVENT END:VCALENDAR