BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Los_Angeles BEGIN:DAYLIGHT DTSTART:20260308T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20261101T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20261020T041526Z UID:89C2D49C-6714-42D1-8074-DF1428F9B71C DTSTART;TZID=America/Los_Angeles:20261019T153000 DTEND;TZID=America/Los_Angeles:20261019T163000 DESCRIPTION:III-Nitride Ferroelectrics for Low-Power and Extreme Environmen t Electronics\n\nDeep Jariwala\, Department of Electrical and Systems Engi neering\, University of Pennsylvania\, USA\n\nDate: October 12\, 2026\n\nT ime: 3:30 pm to 4:10pm\n\nLocation: PSU Vernier Science Center room 105\n\ nDense and reliable data storage combined with fast and high band-width ac cess in novel memory devices has become the frontier for research in moder n computing hardware. In this regard there have been several advancements across a variety of technologies in the past three decades. Ferroelectric materials and devices are among the forefront of these technologies due to their low-power and fast switching abilities but suffer from integration challenges. Simultaneously\, developing data-heavy computing architectures in extreme environments is a growing need and a frontier challenge since silicon carbide (SiC) which is the leading logic technology for elevated t emperature environments is limited by computing power and lack of memory d evices that can operate at elevated temperatures. In this talk\, I will tr y to make the case of how novel III-nitride materials might present intere sting avenues to overcome some of the above limitations being faced by bot h Silicon and Silicon Carbide (SiC) hardware.\n\nCo-sponsored by: Portland Sate University Physics Dept.\n\nSpeaker(s): Deep Jariwala\, \n\nAgenda: \n3\;30 Introduction of Speaker\n\n4:30 End\n\nRoom: 105\, Bldg: Vernier S cience Center\, Portland State University\, 1025 SW Mill Street\, Portland \, Oregon\, United States\, 97201\, Virtual: https://events.vtools.ieee.or g/m/585315 LOCATION:Room: 105\, Bldg: Vernier Science Center\, Portland State Universi ty\, 1025 SW Mill Street\, Portland\, Oregon\, United States\, 97201\, Vir tual: https://events.vtools.ieee.org/m/585315 ORGANIZER:e.perkins@ieee.org SEQUENCE:1178 SUMMARY:III-Nitride Ferroelectrics for Low-Power and Extreme Environment El ectronics URL;VALUE=URI:https://events.vtools.ieee.org/m/585315 X-ALT-DESC:Description: <br /><h2>III-Nitride Ferroelectrics for Low-Power and Extreme Environment Electronics</h2>\n<p><span style="font-size: 14pt\ ;"><strong>Deep Jariwala\, Department of Electrical and Systems Engineerin g\, University of Pennsylvania\, USA</strong></span></p>\n<p><span style=" font-size: 14pt\;"><strong>Date: October 12\, 2026</strong></span></p>\n<p ><span style="font-size: 14pt\;"><strong>Time: 3:30 pm to 4:10pm</strong>< /span></p>\n<p><span style="font-size: 14pt\;"><strong>Location: PSU Verni er Science Center room 105</strong></span></p>\n<p class="MsoNormal" style ="text-align: justify\;">Dense and reliable data storage combined with fas t and high band-width access in novel memory devices has become the fronti er for research in modern computing hardware. In this regard there have be en several advancements across a variety of technologies in the past three decades. Ferroelectric materials and devices are among the forefront of t hese technologies due to their low-power and fast switching abilities but suffer from integration challenges. Simultaneously\, developing data-heavy computing architectures in extreme environments is a growing need and a f rontier challenge since silicon carbide (SiC) which is the leading logic t echnology for elevated temperature environments is limited by computing po wer and lack of memory devices that can operate at elevated temperatures. In this talk\, I will try to make the case of how novel III-nitride materi als might present interesting avenues to overcome some of the above limita tions being faced by both Silicon and Silicon Carbide (SiC) hardware.</p>\ n<p class="MsoNormal" style="text-align: justify\;">&nbsp\;</p><br /><br / >Agenda: <br /><p>3\;30 Introduction of Speaker</p>\n<p>4:30 End</p>\n<p>& nbsp\;</p> END:VEVENT END:VCALENDAR