BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Los_Angeles BEGIN:DAYLIGHT DTSTART:20270314T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20261101T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20261108T211136Z UID:BA8E6F22-0DAC-4976-87F9-EF33520D9B95 DTSTART;TZID=America/Los_Angeles:20261112T113000 DTEND;TZID=America/Los_Angeles:20261112T130000 DESCRIPTION:Fabrication of atomic-scale dopant-in-silicon for silicon quant um processors\n\nAbstract:\n\nAtomic-scale devices made from individual do pant atoms in silicon offer new ways to investigate physical phenomena and develop novel technologies.\n\nAt Asentas Quantum Systems (AQS)\, we are developing a solid-state quantum processor architecture in which the valen ce electron of a single dopant atom serves as a spin qubit and the nuclear spin of the same atom is used as a quantum memory. I will introduce this architecture and describe the fabrication technology that underpins it.\n\ nOur approach uses scanning tunneling microscopy hydrogen resist lithograp hy (STM-HRL) to place individual dopant atoms deterministically with atomi c-scale precision. Although STM-HRL is an established technique\, the limi ted yield of single-atom fabrication has until recently been a major barri er scaling to large numbers of devices. I will show how we have overcome t his limitation\, achieving a single-atom yield approaching 100% for arseni c in silicon\, providing a fabrication pathway to qubit scaling [1\,2].\n\ nI will outline the full device fabrication process and present preliminar y electrical measurements from arsenic-in-silicon devices fabricated using hydrogen resist lithography.\n\nFinally\, I will set out AQS’s vision f or building a fault-tolerant quantum computer.\n\nRead More:\n\n[Single-At om Control of Arsenic Incorporation in Silicon for High-Yield Artificial L attice Fabrication](https://advanced.onlinelibrary.wiley.com/doi/full/10.1 002/adma.202312282)\n\n[Atomic-Scale Patterning of Arsenic in Silicon by S canning Tunneling Microscopy](https://pubs.acs.org/ancac3/article/14/3/331 6/1389671/Atomic-Scale-Patterning-of-Arsenic-in-Silicon-by)\n\nAGENDA:\n\n Thursday November 12\, 2026\n\n11:30 AM: Networking\, Pizza & Drinks\n\nNo on -- 1 pm: Seminar\n\nPlease register on Eventbrite before 9:30 AM on Thu rsday November 12\, 2026\n\n$4 IEEE members $6 non IEEE members\n\n(discou nts for unemployed and students )\n\nBldg: ==> Use corner entrance: Kifer Road / San Lucar Court ==> Do not enter at main entrance on Kifer Road\, E AG Labs\, 810 Kifer Road\, Sunnyvale\, California\, California\, United St ates\, 95051 LOCATION:Bldg: ==> Use corner entrance: Kifer Road / San Lucar Court ==> Do not enter at main entrance on Kifer Road\, EAG Labs\, 810 Kifer Road\, Su nnyvale\, California\, California\, United States\, 95051 ORGANIZER:G.M.Friedman@ieee.org SEQUENCE:41 SUMMARY:Fabrication of atomic-scale dopant-in-silicon quantum processors URL;VALUE=URI:https://events.vtools.ieee.org/m/590146 X-ALT-DESC:Description: <br /><div class="eds-l-mar-vert-6 eds-l-sm-mar-ver t-4 eds-text-bm structured-content-rich-text">\n<div class="eds-text--left ">\n<h3><span style="font-size: 24pt\;"><strong>Fabrication of atomic-scal e dopant-in-silicon for silicon quantum processors</strong></span></h3>\n< /div>\n</div>\n<div class="eds-l-mar-vert-6 eds-l-sm-mar-vert-4 eds-text-b m structured-content-rich-text">\n<div class="eds-text--left">\n<div id="c reator-nav-root">\n<div class="creator-workspace-layout events-workspace c reator-workspace-layout-without-header" data-testid="creator-workspace-lay out">\n<div class="creator-workspace--no-tabs" data-testid="creator-worksp ace-main">\n<div class="eds-structure eds-structure--min-height eds-struct ure--independent-scrolling">\n<div class="eds-structure__body">\n<div clas s="eds-structure__main-mask" data-spec="eds-structure-main-mask">\n<div cl ass="event-level-container">\n<div id="root">\n<div class="eds-structure e ds-structure--min-height eds-structure--independent-scrolling" data-spec=" eds-structure">\n<div class="eds-structure__body eds-structure__body--over flow-set">\n<div class="eds-structure__main-mask eds-structure__main-mask- -overflow-set" data-spec="eds-structure-main-mask">\n<div class="eds-struc ture__fixed-bottom-bar-layout-wrapper eds-structure__fixed-bottom-bar-layo ut-wrapper--absolute">\n<div class="eds-fixed-bottom-bar-layout eds-fixed- bottom-bar-layout--absolute" data-spec="fixed-bottom-bar-layout">\n<div cl ass="eds-fixed-bottom-bar-layout__content">\n<div class="eds-structure__ma in-container"><main class="eds-structure__main" data-spec="eds-structure-m ain">\n<section class="eds-layout eds-layout--has-horizontal-gutters" data -spec="eds-layout">\n<div class="eds-layout__body" data-spec="eds-layout__ body">\n<div class="Form-module__wrapper___1sKak "><form class="css-10oam i3 e1ft4gvv1" name="DetailsForm" novalidate="" data-testid="EventCreateDet ailsForm">\n<div class="css-188aeyp e9y8vn50">\n<div id="AboutThisEventSec tion" class="css-1g9pewn em1van10" tabindex="0" role="button" data-testid= "AboutThisEventSection" aria-label="Overview. Use this section to provide more details about your event. You can include things to know\, venue info rmation\, accessibility options&mdash\;anything that will help people know what to expect.">\n<div class="Section-module__SectionContainer___fNm4Y"> \n<div id="AboutThisEventPreview" class="css-1dykrq ezg9ojv4" data-testid= "AboutThisEventPreview">\n<div data-testid="ModulesListPreview">\n<div cla ss="css-1hbyxwu e1pmrtpl0">\n<p class="MsoNormal"><img src="https://events .vtools.ieee.org/vtools_ui/media/display/e0a2fdd1-4ad6-4b71-bfad-b0803c29f c80" width="500" height="500"></p>\n<h3><strong>Abstract:</strong></h3>\n< h3><span style="font-size: 18pt\;"><strong>Atomic-scale devices made from individual dopant atoms in silicon offer new ways to investigate physical phenomena and develop novel technologies.</strong></span></h3>\n<h3><span style="font-size: 18pt\;"><strong>At Asentas Quantum Systems (AQS)\, we ar e developing a solid-state quantum processor architecture in which the val ence electron of a single dopant atom serves as a spin qubit and the nucle ar spin of the same atom is used as a quantum memory. I will introduce thi s architecture and describe the fabrication technology that underpins it.< /strong></span></h3>\n<h3><span style="font-size: 18pt\;"><strong>Our appr oach uses scanning tunneling microscopy hydrogen resist lithography (STM-H RL) to place individual dopant atoms deterministically with atomic-scale p recision. Although STM-HRL is an established technique\, the limited yield of single-atom fabrication has until recently been a major barrier scalin g to large numbers of devices. I will show how we have overcome this limit ation\, achieving a single-atom yield approaching 100% for arsenic in sili con\, providing a fabrication pathway to qubit scaling [1\,2].</strong></s pan></h3>\n<h3><span style="font-size: 18pt\;"><strong>I will outline the full device fabrication process and present preliminary electrical measure ments from arsenic-in-silicon devices fabricated using hydrogen resist lit hography.</strong></span></h3>\n<h3><span style="font-size: 18pt\;"><stron g>Finally\, I will set out AQS&rsquo\;s vision for building a fault-tolera nt quantum computer.</strong></span></h3>\n<p>&nbsp\;</p>\n<h3><span style ="font-size: 18pt\;"><strong>Read More:</strong></span></h3>\n<h3><br><spa n style="font-size: 18pt\;"><a title="https://advanced.onlinelibrary.wiley .com/doi/full/10.1002/adma.202312282" href="https://advanced.onlinelibrary .wiley.com/doi/full/10.1002/adma.202312282" target="_blank" rel="nofollow noopener noreferrer ugc"><strong>Single-Atom Control of Arsenic Incorporat ion in Silicon for High-Yield Artificial Lattice Fabrication</strong></a>< /span></h3>\n<h3><br><span style="font-size: 18pt\;"><a title="https://pub s.acs.org/ancac3/article/14/3/3316/1389671/Atomic-Scale-Patterning-of-Arse nic-in-Silicon-by" href="https://pubs.acs.org/ancac3/article/14/3/3316/138 9671/Atomic-Scale-Patterning-of-Arsenic-in-Silicon-by" target="_blank" rel ="nofollow noopener noreferrer ugc"><strong>Atomic-Scale Patterning of Ars enic in Silicon by Scanning Tunneling Microscopy</strong></a></span></h3>\ n</div>\n<div class="css-1hbyxwu e1pmrtpl0">\n<h3>&nbsp\;</h3>\n<p>&nbsp\; </p>\n<p class="MsoNormal"><strong><span style="font-size: 20.0pt\; line-h eight: 107%\;">&nbsp\;</span></strong><strong>AGENDA:</strong></p>\n</div> \n</div>\n</div>\n</div>\n</div>\n</div>\n</form></div>\n</div>\n</section >\n</main></div>\n</div>\n</div>\n</div>\n</div>\n</div>\n</div>\n</div>\n </div>\n</div>\n</div>\n</div>\n</div>\n</div>\n</div>\n</div>\n</div>\n<d iv class="eds-l-mar-vert-6 eds-l-sm-mar-vert-4 eds-text-bm structured-cont ent-rich-text">\n<div class="eds-text--left">\n<div class="css-188aeyp e9y 8vn50">\n<div id="AboutThisEventSection" class="css-cd870x em1van10" tabin dex="0" role="button" data-testid="AboutThisEventSection" aria-label="Over view. Use this section to provide more details about your event. You can i nclude things to know\, venue information\, accessibility options&mdash\;a nything that will help people know what to expect.">\n<div id="AboutThisEv entPreview" class="css-1dykrq ezg9ojv5" data-testid="AboutThisEventPreview ">\n<div data-testid="ModulesListPreview">\n<div class="css-1hbyxwu e1pmrt pl0">\n<p><strong>Thursday November 12</strong><strong>\, 2026</strong></p >\n<p><strong>11:30 AM: Networking\, Pizza &amp\; Drinks</strong></p>\n<p> <strong>Noon -- 1 pm: Seminar</strong></p>\n<p><strong>Please register on Eventbrite before 9:30 AM on</strong><strong> Thursday November 12\, 2026< /strong></p>\n<p><strong>$4 IEEE members&nbsp\; $6 non IEEE members </stro ng></p>\n<p><strong>(discounts for unemployed and students</strong> )</p>\ n</div>\n</div>\n</div>\n</div>\n</div>\n</div>\n</div> END:VEVENT END:VCALENDAR