[Legacy Report] IEEE Swiss CAS/ED Sponsored Talk

#photosensing #photonics #visible #and #near #infrared #spectral #range #detector #image #sensor

Talk by 

Dr. Peter Seitz of Hamamatsu Photonics Innovation Center Europe

Abstract: 

Silicon is not only the workhorse semiconductor for analog and digital microelectronics, it is also an excellent material for photosensing. Due to the particular bandgap and absorption properties of silicon, CMOS technology can be used for the realization of high-performance image sensors in the visible and near infrared (VISNIR) spectral range, covering wavelengths between 300 and 1000 nm. Conventional wisdom hold its, however, that silicon-based CMOS technology is unsuited for the detection of mid-infrared (l=2-8 µm), thermal infrared (l=8-15 µm), far infrared (l=15-300 µm), Terahertz (l=300-1000 µm) or medical X-ray radiation (E=10-100 keV), as well as for the detection of charged or uncharged low-energy (E<500 eV) particles such as electrons, ions, atoms, neutrons.

In this presentation, the physical principles of radiation detection with silicon are reviewed, and rarely-used interaction mechanisms such as intersubband transitions or free charge carrier absorption (FCA) are discussed. Based on these insights, it is shown how CMOS technology can be employed for the realization of image sensors for infrared, Terahertz, medical X-ray and particle radiation.

• Date: 13 Feb 2015
• Time: 03:00 PM to 04:00 PM
• All times are (UTC+01:00) Bern
• Add Event to Calendar
  iCal
  Google Calendar

• Zurich, Switzerland
• Switzerland

---

• Contact Event Host