THz Transistors and Their Applications
Transistors fabricated in the Indium Phosphide (InP) material systems have proven capable of reaching fMAX greater than 1 THz. This talk describes InP HEMT capabilities at Northrop Grumman. The talk starts with a technology overview, and then describes different applications at submillimeter and THz frequencies. The talk completes with an overview of MMIC, component and sub-system results at these frequencies.
About the Speaker
Dr. Bill Deal is a Consulting Engineer at Northrop Grumman, where he leads the development of high frequency electronics. His group is involved with state of the art low noise transistor development, and is currently developing receivers to as high as 850 GHz for a variety of applications. Dr. Deal is a Fellow of the IEEE, and has published more than 150 conference and journal papers.
Reception and Networking: 6:30 PM
Presentation: 7:00 PM
Meetings are free and open to the public.
Location
Skyworks Solutions
649 Lawrence Drive
Newbury Park, CA 91320
(Not the main building; please use map to arrow that pinpoints building)
Presented by: IEEE Buenaventura Microwave Theory and Techniques Society Chapter
Date and Time
Location
Hosts
Registration
- Date: 21 Jan 2020
- Time: 06:30 PM to 08:00 PM
- All times are (GMT-08:00) PST8PDT
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