IEEE EDS Mini-Colloquium on "Nanoelectronics and Nanotechnology"

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IEEE ED NIT Silchar Student Branch Chapter organises IEEE EDS Mini-Colloquium on "Nanoelectronics and Nanotechnology"



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  • Date: 31 Oct 2020
  • Time: 10:00 AM to 05:00 PM
  • All times are (UTC+05:30) Chennai
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  • DEPT OF ECE
  • NIT SILCHAR
  • Silchar, Assam
  • India 788010
  • Room Number: EC-23

  • Contact Event Host
  • Co-sponsored by Dr. T. R. Lenka
  • Starts 05 October 2020 08:10 PM
  • Ends 31 October 2020 05:00 PM
  • All times are (UTC+05:30) Chennai
  • No Admission Charge


  Speakers

Prof. Brajesh Kumar Kaushik Prof. Brajesh Kumar Kaushik of Indian Institute of Technology-Roorkee

Topic:

Spintronics-Perspectives and Challenges

Conventional CMOS technology has reached to the brink of its scaling limits and poses significant challenges for the development of next generation high-speed ultra-low power cost-effective memory and processing devices. The failure of Moore's law on the technology roadmap has enforced the research community to explore alternative technology solutions to mitigate the problems. In the post-CMOS era, spintronics shall emerge as a potentially viable interdisciplinary field with credible technological perspectives. Spintronic exploits an electron’s spin orientation and its associated magnetic moment as a state variable instead of a conventionally used charge in CMOS technology. In general, the spintronic devices are layered structure of ferromagnetic materials and provide the nonvolatile storage options and manipulations of logic states. Spin transfer torque (STT) and spin orbit torque (SOT) devices using magnetic tunnel junctions (MTJs) have become strong contenders for the nonvolatile embedded memory architectures with the capability of implementing the concepts of "logic-in-memory" and "material-device-circuit co-design." The spin torque devices offer the features of "universal memory" i.e., high speed, nonvolatility, high density, and low power, high endurance, CMOS process compatibility. Apart from the basic spin torque devices, the field of spintronics encloses all spin logic (ASL) devices, domain wall (DW) based devices, spin diodes, and spin FETs. The material and device level roadmaps for the field of spintronics suggest that the research work is at the infant stage and still require different elemental spin device developments with the understanding of associated underlying physics. In addition, the accurate models for the spintronic devices imitating the effect of stochastic behaviour and PVT variations need to be explored. Spintronics based architectures are being considered for computing applications such as bio-inspired computing and quantum computing. These spintronics based novel computing approaches find applications in image processing and provides efficient solution to the complex computing problems.

Biography:

Dr. Brajesh Kumar Kaushik (SM'13) received Doctorate of Philosophy (Ph.D.) in 2007 from Indian Institute of Technology, Roorkee, India. He joined Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, as Assistant Professor in December 2009; promoted to Associate Professor in April 2014; and since Aug 2020 he has been serving as full Professor. He had been Visiting Professor at TU-Dortmund, Germany in 2017; McGill University, Canada in 2018 and Liaocheng University, China in 2018. He is currently serving as Visiting Lecturer of SPIE society to deliver lectures in the area of Spintronics and Optics at SPIE chapters located across the world. He regularly serves as General Chair, Technical Chair, and Keynote Speaker of reputed international and national conferences. He also served as Chairman and Vice Chairman of IEEE Roorkee sub-section. Dr. Kaushik is a Senior Member of IEEE and member of many expert committees constituted by government and non-government organizations. He is currently serving as Distinguished Lecturer (DL) of IEEE Electron Devices Society (EDS) to offer EDS Chapters with quality lectures in his research domain. He is an Editor of IEEE Transactions on Electron Devices; Associate Editor of IET Circuits, Devices & Systems; Editor of Microelectronics Journal, Elsevier; Editorial Board member of Journal of Engineering, Design and Technology, Emerald and Circuit World, Emerald. He has received many awards and recognition from the International Biographical Center (IBC), Cambridge. His name has been listed in Marquis Who’s Who in Science and Engineering® and Marquis Who’s Who in the World®. He has 12 books to his credit published by reputed publishers such as CRC Press, Springer, Artech and Elsevier. One his books, titled “Nanoscale Devices: Physics, Modeling, and Their Application”, CRC Press won 2018 Outstanding Book and Digital Product Awards in the Reference/Monograph Category from Taylor and Francis Group. He has been offered with fellowships and awards from DAAD, Shastri Indo Canadian Institute (SICI), ASEM Duo, United States-India Educational Foundation (Fulbright-Nehru Academic and Professional Excellence).  His research interests are in the areas of high-speed interconnects, carbon nanotube-based designs, organic electronics, device circuit co-design, optics & photonics based devices, image processing, spintronics-based devices, circuits and computing.  

Email:

Address:Department of Electronics and Communication Engineering,, IIT Roorkee, Roorkee, Uttaranchal, India, 247667

Prof. Manoj Saxena Prof. Manoj Saxena of University of Delhi

Topic:

Modeling and Simulation of Robust Ultrasensitive Tunnel Field Effect Transistor Design for Biosensing Applications

FET based biosensor for realizing label free, fast and highly sensitive biomedical diagnostic tools has become a topic of major interest and attracted a lot of attention in the recent times due to its far-reaching and revolutionary impact on health-care industry. In the present talk, I shall discuss analytical modeling scheme for Dielectric Modulated Tunnel Field Effect Transistor (DM-TFET) based biosensor and shall highlight its advantages over DM-FET biosensors. Further, using technology computer aided design (TCAD), the role and influence of various process, experimental variations and hybridization profiles of the biomolecules on the sensitivity of the DM-TFET biosensor has been discussed to analyze the pros & cons of DM-TFET based biosensors by having a fair performance comparison with DM-FET biosensor.

Biography:

Manoj Saxena (SM’08) received M. Sc., and Ph.D. degrees in Electronics from University of Delhi, New Delhi, in 2000 and 2006 respectively. He is currently Associate Professor in Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, India. He has authored or coauthored 300 technical papers in international journals and conference proceedings (including 81 papers in TED, TDMR, TNANO, EDL and IEEE conference proceedings) and has delivered 25 EDS DL talks in past three years. He received “Highly Valued Volunteer for 2011-2012 EDS Chapters in South Asia, IEEE Region 10” and has reviewed extensively IEEE Journals and Conferences. He is Fellow-IETE (India), Member of – IOP (UK), IET (UK) and The National Academy of Sciences India (NASI). He is currently IEEE EDS Board of Governer Member and Regional Editor IEEE EDS Newsletter – Region 10 South Asia (2016 - ) and was Vice Chair – IEEE EDS SRC Region 10 (2015-2017)

Email:

Address:Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, Delhi, Delhi, India, 110078






Agenda

IEEE EDS Mini-Colloquium on "Nanoelectronics and Nanotechnology"

10:30-11:00 AM: Inauguration of the Mini-Colloquium

11:00-12:00 AM: DL Talk by Prof. B. K. Kaushik, IIT Roorkee, India

Title of the DL Talk: Spintronics-Perspectives and Challenges

12:00-1:00 PM: DL Talk by Prof. Y. S. Chauhan, IIT Kanpur, India

Title of the DL Talk: GaN HEMT Characterization and Modeling using ASM-HEMT

1:00-2:30 PM: Lunch Break

2:30-3:30 PM: DL Talk by Prof. Manoj Saxena, University of Delhi, India

Title of the DL Talk: Modeling and Simulation of Robust Ultrasensitive Tunnel Field Effect Transistor Design for Biosensing Applications

3:30-4:30 PM: DL Talk by Prof. G. N. Dash, Sambalpur University, India

Title of DL Talk: Contact resistance induced variability in Graphene Field Effect Transistors (GFET).