IEEE EDS Distinguished Lecture by Prof. Elena Gnani, University of Bologna, Italy
Tunnel FETs: Device Physics and Realizations
Date and Time
Location
Hosts
Registration
- Date: 12 Jul 2021
- Time: 03:00 PM to 05:00 PM
- All times are (GMT+05:30) Asia/Calcutta
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- Dept. of ECE, Room# EC-23,
- National Institute of Technology Silchar, NIT Silchar, Cachar, Assam, 788010
- Silchar, Assam
- India 788010
- Building: ECE/CSE Building
- Room Number: EC-23
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- Co-sponsored by Dr. T. R. Lenka
- Starts 21 June 2021 11:06 PM
- Ends 12 July 2021 05:00 PM
- All times are (GMT+05:30) Asia/Calcutta
- No Admission Charge
Speakers
Prof. Elena Gnani of University of Bologna
Tunnel FETs: Device Physics and Realizations
"Steep-slope transistors allow to scale down the supply voltage due to their sub-60 mV/decade slope. Currently pursued approaches consist in alternative carrier injection mechanisms, like band-to-band tunneling, phase-change, abrupt change in the polarization of ferroelectric materials, or band modulation feedback transistors. We will reviews critically the status of sharp-switching devices, focusing on Tunnel TEF devices. We will discuss their theoretical potential, as well as their practical limitations."
Biography:
Associate Professor at the University of Bologna since 2014, she contributed to the development of physical transport models in semiconductor devices and numerical-analysis techniques, with special emphasis on the study of quantum-confined devices, such as FinFETs, silicon nanowires (NW), as well as steep-slope devices. Currently her research focused on new device concepts able to reduce the power consumption of integrated circuits. She participated in several European and National research projects, in cooperation with worldwide semiconductor research centers and semiconductor industries. She is author of more than 180 paper published in referred international journals and in proceedings of major international conferences, and of several invited contributions.
Email:
Address:University of Bologna, Via Risorgimento 2 40136 Bologna, Bologna, Italy, 40136
Agenda
IEEE EDS Distinguished Lecture by Prof. Elena Gnani, University of Bologna, Italy
Title of the Talk: Tunnel FETs: Device Physics and Realizations